A cross-sectional transmission electron microscope (TEM) analysis was conducted on the GdBa2Cu3O7−δ (GdBCO) tapes, which were synthesized by depositing Al2O3/Gd2O3/IBAD–MgO/epi-MgO buffer layers on the hastelloy substrate by the ion-beam-assisted deposition (IBAD) method and subsequently depositing LaMnO3 and GdBCO layer by pulsed laser deposition (PLD) method. The average critical current (Ic) value was 62.5A and the average full width at half maximum (FWHM) values of the in-plane GdBCO(102) was 4.4°. The thickness of the each stacked layer was precisely measured with TEM micrographs and the structural features were analyzed with scanning transmission electron microscope-energy dispersive X-ray spectrometer (STEM-EDS). The diffusion of the Cr ion in the hastelloy into the Al2O3 layer was detected and the thickness of the diffused layer was about 10nm.
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