Electron Energy Loss Spectroscopy Research Articles

Mapping the energy-momentum dispersion of hBN excitons and hybrid plasmons in hBN-WSe2 heterostructures

Heterostructures obtained by combining two-dimensional (2D) sheets are widely investigated as a platform for designing new materials with customised characteristics. Transition metal dichalcogenides (TMDCs) are often combined with hexagonal boron nitride (hBN) to enhance their excitonic resonances. However, little is known about how stacking affects excitons and plasmons in TMDCs or their mutual interactions. Here, we combine momentum-resolved electron energy-loss spectroscopy with first-principles calculations to study the energy-momentum dispersion of plasmons in multi-layer WSe2-hBN heterostructures as well as in their isolated components. The dispersion of the high-momentum excitons of hBN, alone and in combination with WSe2, is mapped across the entire Brillouin zone. Signatures of hybridisation in the plasmon resonances and some of the excitons suggest that the contribution of hBN cannot be neglected when interpreting the response of such a heterostructure. The consequences of using hBN as an encapsulant for TMDCs are also discussed.

Elemental mapping in single-particle reconstructions by reconstructed electron energy-loss analysis.

For macromolecular structures determined by cryogenic electron microscopy, no technique currently exists for mapping elements to defined locations, leading to errors in the assignment of metals and other ions, cofactors, substrates, inhibitors and lipids that play essential roles in activity and regulation. Elemental mapping in the electron microscope is well established for dose-tolerant samples but is challenging for biological samples, especially in a cryo-preserved state. Here we combine electron energy-loss spectroscopy with single-particle image processing to allow elemental mapping in cryo-preserved macromolecular complexes. Proof-of-principle data show that our method, reconstructed electron energy-loss (REEL) analysis, allows a three-dimensional reconstruction of electron energy-loss spectroscopy data, such that a high total electron dose is accumulated across many copies of a complex. Working with two test samples, we demonstrate that we can reliably localize abundant elements. We discuss the current limitations of the method and potential future developments.

Atomic-scale visualization of defect-induced localized vibrations in GaN.

Phonon engineering is crucial for thermal management in GaN-based power devices, where phonon-defect interactions limit performance. However, detecting nanoscale phonon transport constrained by III-nitride defects is challenging due to limited spatial resolution. Here, we used advanced scanning transmission electron microscopy and electron energy loss spectroscopy to examine vibrational modes in a prismatic stacking fault in GaN. By comparing experimental results with ab initio calculations, we identified three types of defect-derived modes: localized defect modes, a confined bulk mode, and a fully extended mode. Additionally, the PSF exhibits a smaller phonon energy gap and lower acoustic sound speeds than defect-free GaN, suggesting reduced thermal conductivity. Our study elucidates the vibrational behavior of a GaN defect via advanced characterization methods and highlights properties that may affect thermal behavior.

Investigating the expansion behavior of silicon nitride nanopores

Nanopores are a single-molecule detection platform that has attracted more and more researchers’ attention, but so far there is still a lack of systematic research on their stability. In this study, we investigated the mechanism behind the expansion behavior of solid-state nanopores and its effect on the electrical properties of nanopores. Through the analysis of electron energy loss spectroscopy, it was found that the expansion process of nanopores is accompanied by the loss of silicon elements. Three nanopore expansion models can well explain the differential impact of silicon element loss in different regions on the electrical properties of nanopores. Molecular dynamics simulations analyzed the differences in nanopore conductivity and expansion rate corresponding to different expansion models from the perspective of single-atom loss. Finally, we demonstrated that chemical modification can isolate direct contact between the nanopore wall and the solution, thereby greatly delaying the expansion behavior of solid-state nanopores.

MXene Electrodes for All Strain-Free Solid-State Batteries.

All-solid-state batteries with nonflammable inorganic solid electrolytes are the key to addressing the safety issues of lithium-ion batteries with flammable organic liquid electrolytes. However, conventional electrode materials suffer from substantial volume changes during Li+ (de)intercalation, leading to mechanical failure of interfaces between electrode materials and solid electrolytes and then severe performance degradation. In this study, we report strain-free charge storage via the interfaces between transition metal carbides (MXenes) and solid electrolytes, where MXene shows negligible structural changes during Li+ (de)intercalation. Operando scanning electron transmission microscopy with electron energy-loss spectroscopy reveals the pillar effect of trapped Li+ in the interlayer spaces of MXene to achieve the strain-free features. An all strain-free solid-state battery, which consists of a strain-free Ti3C2Tx negative electrode and a strain-free disordered rocksalt Li8/7Ti2/7V4/7O2 positive electrode, demonstrates long-term stable operation while preserving the interfacial contact between electrode materials and solid electrolytes.

Size-Dependent Core-Shell Fine Structures and Oxygen Evolution Activity of Electrochemical IrOx Nanoparticles Revealed by Cryogenic Electron Microscopy.

Electrochemically oxidized amorphous iridium oxides (IrOx) offer significantly improved electrocatalytic activities on the oxygen evolution reaction (OER) compared to crystalline IrO2, yet the origin of their decent activity and their size-dependent properties have not been fully understood. An important argument is the formation of deprotonated oxygen species not only at the topmost surface but also at the near surface, which creates an electrophilic character that activates the OER electrocatalysis. However, high spatial resolution identification of the electrophilic oxygen species remains unachieved. We address this hitherto-unresolved problem on size-selected electrochemical IrOx nanoparticles (NPs) by using cryogenic scanning transmission electron microscopy combined with electron energy loss spectroscopy, which enables simultaneous atomic detection of the near surface compositional and electronic structures with minimal damage that are further correlated with their size-dependent OER activities. Depending on the particle size, the electrochemical IrOx NPs showed distinctly different core-shell fine structures ranging from amorphous and hydrous IrOxHy NPs to a "metallic Ir core/sub-stoichiometric IrOx interlayer/amorphous IrOxHy shell" NP structure. Moreover, the formation of deprotonated, electrophilic oxygen is directly identified at the substoichiometric IrOx interface layer. These features account for a previously unestablished particle size effect of the electrochemical IrOx NPs, showing increasing water oxidation reactivity with an increasing nanoparticle size. Our results provide important insights into how subsurface oxygen chemistry controls the surface reactivity in the nanoscale Ir-based OER electrocatalysts.

Effect of pure (ligand-free) nanoparticles of magnetite in sodium chloride matrix on hematological indicators, blood gases, electrolytes and serum iron

AbstractOne of the physical methods for obtaining magnetite nanoparticles (NPs) is electron beam physical vapor deposition (EB PVD), which requires complex equipment, but allows obtaining a significant amount of pure (ligand-free) NPs. The biomedical application of such NPs is less studied than materials from other synthesis methods. The objective is to study the effect of pure magnetite NPs in the NaCl matrix obtained by EB PVD on hematological indicators, gases, electrolytes and parameters of iron metabolism in the blood of intact animals. The physical characteristics of NPs were studied using high-resolution transmission electron microscopy, scanning transmission electron microscopy, energy-dispersive X-ray spectroscopy mapping, electron energy-loss spectroscopy, selected area electron diffraction and fast Fourier transform. In vivo experiments were conducted on albino male rats, which were injected with solution of magnetite-sodium chloride NPs (1.35 mg Fe/kg). After 3 and 72 h, hematological parameters, blood gases, electrolytes, and serum iron were determined. The synthesized NPs had an average size of 11 nm. They were identified as magnetite, where polycrystals and single crystals were present. The absence of contamination in crystal boundaries, clear orientation and orderliness of atoms in crystals were established. The administration of NPs in the sodium chloride matrix to animals was characterized by a transient increase in the main indicators of red blood accompanied by an increase in the saturation of erythrocytes with hemoglobin and their mean volume after 3 h. It did not worsen blood gases and pH, but decreased blood Na+ content after 72 h. The investigated NPs caused changes in the parameters of serum iron characteristic to iron preparations, which after 3 h were smaller compared to the reference iron drug, and after 72 h—similar to it. More intense rapid effects on hematological parameters at lower serum iron indicate greater activity of the studied pure magnetite NPs obtained by EB PVD syntesis compared to the reference iron preparation.

Epitaxial growth and band offsets of β -(ScxGa1− x)2O3 thin films grown on (100) β -Ga2O3 substrate

β-(ScxGa1−x)2O3 (x = 0–0.36) thin films were epitaxially grown on (100) β-Ga2O3 substrates by oxygen-radical-assisted pulsed-laser deposition. β-(ScxGa1−x)2O3 epilayers were coherently strained up to x = 0.30, although the presence of a structural disorder was implied when x > 0.2. The bandgap energies measured by reflection electron energy loss spectroscopy increased from 4.56 to 5.25 eV with increasing Sc content. In β-(ScxGa1−x)2O3 epilayers, a slightly negative bandgap bowing behavior with a bowing parameter of −0.4 eV was observed, resulting in a larger bandgap increase than in β-(AlxGa1−x)2O3 epilayers with identical x. X-ray photoemission spectroscopy measurement revealed that the valence-band and conduction-band offsets of β-(Sc0.17Ga0.83)2O3 epilayer with respect to β-Ga2O3 were 0.0 and 0.3 eV, respectively.

Microstructural evolution of diamond thin film grown on a silicon substrate via a surface-wave plasma system: Identification of intermediated phase

Diamond thin films are promising for diverse applications because of their exceptional properties. Understanding the interface between diamond films and substrates is crucial for optimizing the film quality and functionality. In this study, a diamond thin film was grown on a Si(100) substrate using a microwave-based surface-wave plasma system and subjected to transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS). The formation of a SiC interlayer was identified at the interface between the diamond thin film and Si substrate through cross-sectional TEM and EELS. Analysis of the atomic structure and crystalline properties indicated that the interlayer was β-SiC and that the orientation relationships [110]β-SiC//[110]Si and (111)β-SiC//(111)Si existed at the β-SiC/Si interface. The β-SiC interlayer exhibited the {111} extra half-planes, because they were more easily formed by the {111} planes than the {110} extra half-planes generated on {001} planes through 60° misfit dislocations. Many stacking faults and microtwins were observed in the diamond grains; such planar defects were likely attributed to strain behavior and complex contrasts at the nanoscale.

TEM-EELS analysis reveals the W-atom mediated radiation-induced amorphization in M23C6

To gain a mechanistic understanding of the phase stability of M23C6 upon irradiation, the bulk W-doped M23C6 (Cr-W-C system) in the range of 0–12 at.% W concentration was prepared and subjected to helium beam irradiation, following with a thorough electron energy loss spectroscopy (EELS) analysis. Radiation-induced amorphization (RIA) was observed only at the 4 W sample with a W concentration of ∼12 at.%. Analysis of the low-loss spectrum showed that the inelastic mean free path (λ) could be applied an effective indicator of the presence of an amorphous phase. The white line ratio of the carbon K-edge spectrum showed that the chemical bonding state in the crystalline state is mainly 2p3/2 bonding, and it changes to dominantly 2p1/2 bonding accompanying with the crystal-to-amorphous (c-a) transition. Discussion on the relationship between the change in λ (Δλ) and the lattice parameter (Δa) due to irradiation reveals that Δa is not dependent on Δλ, indicating that Δλ is mainly caused by the volume expansion due to the c-a transition. In addition, a crystalline state is remained even after a lattice parameter change of ∼1.5 % in 0 W and 1W-samples, whereas, a lattice expansion of ∼0.2 % would trigger the occurrence of crystal-to-amorphous transition in the 4W-sample. The detailed EELS analysis demonstrated that the constitutional W atoms play an important role in facilitating the occurrence of RIA in M23C6, that is, the phase instability accompanying the lattice expansion due to irradiation was emphasized by the addition of W in M23C6. The insights obtained here suggest that a higher W concentration in M23C6 is more susceptible to RIA, and therefore the resistance to amorphization is achievable by decreasing the W concentration in the steels.

Realizing smart scanning transmission electron microscopy using high performance computing.

Scanning Transmission Electron Microscopy (STEM) coupled with Electron Energy Loss Spectroscopy (EELS) presents a powerful platform for detailed material characterization via rich imaging and spectroscopic data. Modern electron microscopes can access multiple length scales and sampling rates far beyond human perception and reaction time. Recent advancements in machine learning (ML) offer a promising avenue to enhance these capabilities by integrating ML algorithms into the STEM-EELS framework, fostering an environment of active learning. This work enables the seamless integration of STEM with High-Performance Computing (HPC) systems. This integration is facilitated by our developed server software, written in Python, which acts as a wrapper over DigitalMicrograph (version 3.5) hardware modules to enable remote computer interactions. We present several implemented workflows that exemplify this integration. These workflows include sophisticated techniques such as object finding and deep kernel learning. Through these developments, we demonstrate how the fusion of STEM-EELS with ML and HPC enhances the efficiency and scope of material characterization for all of STEM available globally having Gatan, Inc. image filter installed on them. The codes are available on GitHub.

Advanced Electron Microscopy Characterisation of Aluminium-Oxygen Coordination in Catalyst Supports

Performance of alumina-supported catalyst systems are significantly affected by how the tetrahedral (Al-O4) and octahedral (Al-O6) coordination are mixed and blended with each other. Characterisation of aluminium-oxygen coordination is thus important to understand how catalysts interact with alumina at the microscopic level. Here we report the application of two advanced electron microscopy techniques on aluminium-oxygen coordination. The first technique is electron energy loss spectroscopy (EELS) that can reveal detailed electronic structure profile of aluminium valence band to analyse how aluminium is coordinated by oxygen. The second technique is pair distribution function (PDF) based on electron diffraction (ED), employed to measure aluminium-oxygen bond lengths associated with the coordination geometry.

Unveiling the magnetic structure of BaFeO3-y: Shedding light on the elusive magnetic behavior

This work provides a comprehensive examination of the structural and magnetic properties of 6H-BaFeO2.96 over a wide temperature range (10 K < T < 300 K) using neutron and synchrotron X-ray diffraction. Additionally, the local oxidation state of iron is examined using electron energy loss spectroscopy. No structural changes that could indicate a charge-order transition are observed in spite of a reported possible charge disproportionation of Fe4+ into Fe(4+δ)+ and Fe(4-δ)+ phenomenon at low temperature. According to the magnetic characterization, BaFeO2.96 orders antiferromagnetically at TN=156 K. The application of external magnetic fields strongly influences the magnetic behavior; the transition temperature shifts to lower values with the applied magnetic field and the long-range magnetic order melts with an applied field of 14 T. The magnetocaloric effect clearly shows at TN a change from negative to positive magnetic entropy. The Rietveld refinement of the neutron powder diffraction data collected at 10 K, gives a magnetic ordering with propagation vector [0, 0, ½] and three magnetically distinct sites for the Fe atoms. This magnetic structure consists of ferromagnetic Fe-sheets perpendicular to the c-axis with the magnetic moments along the [110] direction coupled both ferromagnetic and antiferromagnetically along the c-axis. The magnetic moment values of the three Fe ions are very different evidencing a delicate equilibrium of competing magnetic interactions.

Advanced spectroscopic methods for probing in-gap defect states in amorphous SiNx for charge trap memory applications

Silicon nitride (SiNx) serves as the charge trap layer in current 3D NAND flash memory devices. The precise formation mechanism and electronic structure of localized defect trap states in SiNx remain elusive. Here, we present a refined experimental methodology to elucidate the in-gap defect states and the band gaps in amorphous SiNx thin films. Our approach integrates high-resolution reflection electron energy loss spectroscopy (REELS) and spectroscopic ellipsometry (SE) for comprehensive analysis. By systematical analysis, we aim to provide a robust method for determining in-gap electronic states in SiNx. We investigated two different SiNx films prepared by plasma-enhanced chemical vapor deposition and sputtering. Our analysis revealed several distinct in-gap states and determined band gap energies. This approach not only provide advanced spectroscopic methods to characterize the defect electronic states in SiNx, but also applicable to other large band gap semiconductors or dielectrics to predict device-level characteristics for future devices.

Non-Volatile Resistive Switching in Nanoscaled Elemental Tellurium by Vapor Transport Deposition on Gold.

Two-dimensional (2D) materials are promising for resistive switching in neuromorphic and in-memory computing, as their atomic thickness substantially improve the energetic budget of the device and circuits. However, many 2D resistive switching materials struggle with complex growth methods or limited scalability. 2D tellurium exhibits striking characteristics such as simplicity in chemistry, structure, and synthesis making it suitable for various applications. This study reports the first memristor design based on nanoscaled tellurium synthesized by vapor transport deposition (VTD) at a temperature as low as 100°C fully compatible with back-end-of-line processing. The resistive switching behavior of tellurium nanosheets is studied by conductive atomic force microscopy, providing valuable insights into its memristive functionality, supported by microscale device measurements. Selecting gold as the substrate material enhances the memristive behavior of nanoscaled telluriumin terms of reduced values of set voltage and energy consumption. In addition, formation of conductive paths leading to resistive switching behavior on the gold substrate is driven by gold-tellurium interface reconfiguration during the VTD process as revealed by energy electron loss spectroscopy analysis. These findings reveal the potential of nanoscaled tellurium as a versatile and scalable material for neuromorphic computing and underscore the influential role of gold electrodes in enhancing its memristive performance.

Microstructural and mechanical properties of TiN/CrN and TiSiN/CrN multilayer coatings deposited in an industrial-scale HiPIMS system: Effect of the Si incorporation

Surface engineering through the deposition of advanced coatings, particularly multilayer coatings has gained significant interest for enhancing the performance of coated parts. The incorporation of Si into TiN coatings has shown promise for improving hardness, oxidation resistance, and thermal stability, while high-power impulse magnetron sputtering (HiPIMS) has emerged as a technique to deposit coatings with exceptional properties. However, TiN/CrN and TiSiN/CrN coatings deposited by HiPIMS remain relatively unexplored. In this study, different TiN/CrN and TiSiN/CrN multilayer coatings with different bilayer periods from 5 to 85 nm were deposited using an industrial-scale HiPIMS reactor, and their microstructure and mechanical properties were investigated using advanced characterization techniques. Results revealed successful deposition of smooth and compact coatings with controlled bilayer periods. X-ray diffraction analysis showed separate crystalline phases for coatings with high bilayer periods, while those with smaller bilayer periods exhibited peak-overlapping and superlattice overtones, especially for the TiN/CrN coatings. Epitaxial grain growth was confirmed by high-resolution transmission electron microscopy (HRTEM). HRTEM and electron energy-loss spectroscopy measurements confirmed Si incorporation into the TiN crystal lattice of TiSiN/CrN coatings reducing the crystallinity, especially for coatings with smaller bilayer periods. Nanoindentation tests revealed that coatings with a bilayer period of 15–20 nm displayed the highest hardness values regardless of the composition. The mechanical properties of the TiSiN/CrN coatings showed no improvement over those of the TiN/CrN coatings, attributed to the Si induced amorphization of the Ti(Si)N phase and the absence of SiNx phase segregation within the TiN nanocrystals in these coatings. These findings provide valuable insights into the microstructure and mechanical properties of TiN/CrN and TiSiN/CrN multilayer coatings deposited by HiPIMS in an industrial scale reactor, paving the way for their application in various industrial sectors.

Comprehensive characterization of the irradiation effects of glassy carbon

Carbon materials have become increasingly diverse, finding applications in high-temperature and high-radiation environments. Glassy carbon, an allotrope known for its exceptional chemical inertness and desirable mechanical properties. However, understanding neutron irradiation effects in glassy carbon has proven challenging, primarily because of its unique nanopore structure. This study presents a highly detailed microstructural characterization investigation of neutron-induced changes in glassy carbon, revealing how changes in nanopore structure and crystallinity impact the irradiation-induced shrinkage. Aberration-corrected scanning transmission electron microscopy (STEM) reveals pore closure that leads to material densification in the irradiated samples. Dimensional analysis combined with comparison to historical data suggest significant length shrinkage to occur. Neutron and in situ electron irradiation experiments suggest that glassy carbon transforms into so-called carbon onions, supporting the concept of shrinkage saturation. Investigating irradiation temperature effects using STEM, electron energy loss spectroscopy, x-ray diffraction, and Raman spectroscopy revealed partial amorphization at 210 °C–230 °C and preserved order in glassy carbon at 860 °C, coinciding with pore closure. Thermal property measurements were also conducted to assess the effects of densification and other changes in the atomic structure of glassy carbon. The results of this study have broad implications in the deployment of glassy carbon to nuclear environments, based around the observed changes in the thermal properties, and demonstrates the operational window for the onset of densification.

Oxygen Vacancy Compensation-Induced Analog Resistive Switching in the SrFeO3-δ/Nb:SrTiO3 Epitaxial Heterojunction for Noise-Tolerant High-Precision Image Recognition.

Neuromorphic computing, inspired by the brain's architecture, promises to surpass the limitations of von Neumann computing. In this paradigm, synaptic devices play a crucial role, with resistive switching memory (memristors) emerging as promising candidates due to their low power consumption and scalability advantages. This study focuses on the development of metal/oxide-semiconductor heterojunctions, which offer several technological advantages and have broad potential for applications in artificial neural synapses. However, constructing high-quality epitaxial interfaces between metal and oxide semiconductors and designing modifiable contact barriers are challenging. Herein, we construct high-quality epitaxial metal/semiconductor interfaces based on the metallicity of the perovskite phase SrFeO3-δ (PV-SFO) and a small Schottky barrier in contact with Nb-doped SrTiO3 (NSTO). X-ray diffraction patterns, reciprocal space mapping results, and cross-sectional transmission electron microscopy images reveal that the prepared PV-SFO film exhibits a perfect single-crystal structure and an excellent epitaxial interface with the NSTO (111) substrate. The corresponding memristor exhibits analog-type resistive-variable characteristics with an ON/OFF ratio of ∼1000, stable data retention after 10,000 s, and no noticeable fluctuation in resistance after 10,000 pulse cycles. Electron energy loss spectroscopy, first-principles calculations, and electrical measurements reveal that compensating or restoring oxygen vacancies at the NSTO surface decreases or increases the contact barrier between PV-SFO and NSTO, respectively, thereby gradually regulating the resistance value. Furthermore, high-quality epitaxial PV-SFO/NSTO devices achieve up to 98.21% recognition accuracy for handwriting recognition tasks using LeNet-5-based network structures and 92.21% accuracy for color images using visual geometry group (VGG) network structures. This work contributes to the advancement of interface-type memristors and provides valuable insights into enhancing synaptic functionality in neuromorphic computing systems.

In situ photoemission spectroscopies to reveal surface transfer doping on hydrogenated milled nanodiamonds

Nanodiamonds (ND) exhibit exceptional chemical, electronic, thermal, and optical properties, making them valuable for applications in nanomedicine, energy, quantum technologies, advanced lubricants, and polymer composites. Surface analysis techniques such as X-ray photoemission spectroscopy (XPS), ultraviolet photoemission spectroscopy (UPS) and reflection electron energy loss spectroscopy (REELS) are critical for understanding the surface properties of nanomaterials, including nanodiamonds. This study investigates hydrogenated milled nanodiamonds (H-MND) by integrating UPS and XPS measurements with REELS. Through in situ annealing within an ultra-high vacuum (UHV) chamber, we examine the impact of surface termination on surface conductivity, focusing on the role of adsorbates. Our findings reveal that a surface transfer doping mechanism, akin to that observed in bulk diamond, governs a pseudo p-type conductivity in H-MND. The conductivity dependence on ambient exposure, water, and subsequent annealing demonstrates its reversibility. The study also discusses the nature of electron acceptors and the influence of ND facets on conductivity.

Comprehensive analysis of chemical composition, electronic, luminescent, and electrical properties of amorphous graphite-silicon carbide thin films: A comparative study of as-deposited and post-annealed states

Graphite/SiC (GSC) thin films were synthesized on silicon substrates via a spray method, depositing a Si-graphite solution on preheated silicon samples at 350 °C, followed by annealing at 800 °C for 4 h. A systematic approach was employed to ensure the effective incorporation of graphite into the SiC material during solution preparation. Various analytical techniques, including XPS, UPS, Reflection Energy Electron Loss Spectroscopy (REELS), PL, AFM, and Hall effect measurements, were employed for comparative analysis of the chemical composition, morphological, electrical, and optoelectronic properties of as-deposited and annealed GSC films. XPS analysis revealed the presence of Si—C and graphitic bonds in the as-deposited GSC, with a significant compositional shift to oxygen-rich graphite oxide/oxycarbides after annealing. REELS demonstrated increased bandgap and bulk plasmon energy due to surface oxidation, while UPS highlighted a high electronic density in the as-deposited film, diminishing after annealing. AFM revealed a tendency of as-deposited GSC grains to form smaller, sharper structures after annealing, resulting in smoother and more homogeneous surface morphology. Phase AFM confirmed graphite incorporation at grain boundaries and within the bulk, forming a composite structure. PL spectra of the as-deposited film exhibited a broad visible emission with distinct sub-peaks linked to SiC bandgap transitions and carbon-rich defects. Chromaticity diagrams indicated suitability for white LED applications. Hall effect measurements showed excellent electrical properties of the as-deposited GSC film, with high carrier density and mobility, which reduced significantly after annealing, transitioning the material to a more insulating state. These findings collectively provide a comprehensive understanding of GSC thin films’ properties and their potential applications.