Electroluminescence Intensity Research Articles

Intense violet electroluminescence of thin SiO2 layers with SnO2 nanocrystals

It has been shown that Sn implantation with subsequent annealing in air leads to an increase in the electroluminescence (EL) intensity of SiO2/Si structure by two orders of magnitude. Intense violet EL with a maximum at 3.21 eV was observed at room temperature by the naked eye at forward bias. The observed emission was attributed to radiative recombination in SnO2 nanocrystals synthesized in SiO2 layers. The external quantum efficiency (EQE) increased with decreasing Sn concentration The maximum external quantum efficiency was found to be 0.7 % for the silica film Sn-implanted at the lowest fluence of 2.5 × 1016cm−2. The non-radiative charge transport (shunt current) through the sample and mechanism of EL excitation are discussed. It has been concluded that the Poole–Frenkel mechanism, or tunneling between traps are the most likely mechanisms of charge transport to light-emitting centers.

Unveiling the potential: Gallium-doped zinc oxide/silver-nanoparticles/glass structure for superior anode performance in polymer light-emitting diodes

This study examines the effectiveness of gallium-doped zinc oxide (GZO) combined with silver nanoparticles (Ag-NPs) on glass substrates as anodes for polymer light-emitting diodes (PLEDs). The proposed GZO/Ag-NPs/glass structure achieved superior electrical and optical properties, with a peak luminance of 5834 cd/m2 and an average current efficiency of 1.91 cd/A, significantly outperforming the conventional GZO/Ag-NPs/GZO/glass anode. The GZO/Ag-NPs/glass anode enhanced electroluminescence intensity by 379 % compared to the GZO/glass anode, while the GZO/Ag-NPs/GZO/glass anode showed a 196 % enhancement. This highlights the potential for improved PLED performance through enhanced anode conductivity and localized surface plasmon resonance effects.

Gamma radiation-induced changes in the structural and optical properties of CsPbBr3 thin films for space applications

Perovskite nanocrystals (NCs) are emerging as a next generation display technology. In this regard, exploring the structural and optical stability when subjected to radiation is crucial for expanding their application in aerospace and radiation detection technologies. In this study, we investigated the effects of gamma radiation on CsPbBr3 heterojunction thin films through a comprehensive analysis of their structural and optical characteristics. The thin films of CsPbBr3 were subjected to varying doses of gamma radiation, ranging from 100 krad to 1 Mrad, followed by thorough examination using X-ray diffraction (XRD) and optical spectroscopy techniques. Our findings unveil significant changes in the crystal structure of CsPbBr3 thin films when exposed to gamma radiation, including shifts in diffraction peak positions from cubic to monoclinic phases, broadening of peaks, and variations in peak intensities due to induced surface defects. The optical properties, such electroluminescence (EL) and photoluminescence (PL) intensity slightly drops at the moderate irradiation dose of 300 krad, while at an irradiation dose of 1 Mrad deteriorated severely. Notably, 300 krad is equivalent to the radiation dose accumulated by satellites in low-Earth orbit over 10 years. The findings in this work suggest the fabricated CsPbBr3 thin film has the potential to be used in space applications.

Increase the inversion degree in Er-doped MgGa2O4 spinel nanofilms to obtain strong electroluminescence

The Ga2O3/MgO/Er2O3 nanolaminates are fabricated by atomic layer deposition and crystallized into Er-doped MgGa2O4 spinel (MGS:Er) nanofilms after annealing, with their electroluminescence (EL) performance characterized. The annealing above 600 °C achieves the polycrystalline spinel nanofilm, and the crystallization is promoted by the higher annealing temperature and Ga2O3/MgO ratio. The dopant Er3+ ions preferably substitute into the octahedron sites occupied by Ga3+ ions in ordinary spinel and Mg2+ in anti-spinel lattice, while the inversion degree is confirmed to increase with the reduction of Ga2O3/MgO ratio and annealing temperature, resulting the relatively enhanced secondary EL at 1542 nm. This perturbation by Er3+-substitution into anti-spinel sites improves the emission intensity and excitation efficiencies, the main EL emission peaking at 1531 nm from the optimal MGS:Er device exhibits the excitation efficiency reaching 5.8 %, with the enhanced electrical injection realizing the maximum EL intensity above 17.3 mW/cm2. The fluorescence lifetime of these MGS:Er devices is established in the range of 371–760 μs, which decreases mainly with the Er concentrations. The prototype device using the near-stoichiometric Ga2O3/MgO ratio shows the operation time of 1.12 × 105 s. This work explores the fabrication of Si-based spinel nanofilms with designed composition and special microstructure, and their practical application in optoelectronics.

Subcell‐Resolved Electroluminescence Imaging of Monolithic Perovskite/Silicon Tandem Solar Cell for High‐Throughput Characterization

In the midterm future, the photovoltaic industry is expected to be dominated by two‐terminal (2T) perovskite–silicon (pero–Si) tandem solar cells, which have high energy conversion efficiency and require characterization for large‐scale production. Electroluminescence (EL) imaging is one of the most prevalent and nondestructive techniques for defect detection, recognition, and characterization in Si‐solar cells in mass production. This work presents an EL setup that enables fast, simultaneous, and separate luminescence capture from the two subcells of pero–Si tandem devices. To demonstrate the setup, several encapsulated 2T pero–Si tandem samples are investigated. First, the effect that resistive coupling between the two subcells has on defect appearance in EL images is recorded. Therefore, EL image under different operational conditions is recorded. A strong dependence of defect signatures on current injection is observed, that is explained partly by resistive coupling but partly as well by injection‐dependent changes of the prevalent defects in the cells. An investigation of preconditioning under dark forward operation reveals significant local decrease of EL intensity going along with rapid reversible or irreversible and severe degradation close to the edges of the samples. This degradation takes place under forward bias during a period of ≈1 h.

Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro- and photoluminescence

The efficiency of multiple quantum well (QW) light emitting diodes (LEDs) to a large degree depends on uniformity of hole distribution between the QWs. Typically, transport between the QWs takes place via carrier capture into and thermionic emission out of the QWs. In InGaN/GaN QWs, the thermionic hole transport is hindered by the high quantum confinement and polarization barriers. To overcome this drawback, hole injection through semipolar QWs located at sidewalls of V-defects had been proposed. However, in the case of the V-defect injection, strong lateral emission variations take place. In this work, we explore the nature of these variations and the impact of the V-defects on the emission spectra and carrier dynamics. The study was performed by mapping electroluminescence (EL) and photoluminescence (PL) with a scanning near-field optical microscope in LEDs that contain a deeper well that can only be populated by holes through the V-defects. Applying different excitation schemes (electrical injection and optical excitation in the far- and near-field), we have shown that the EL intensity variations are caused by the lateral nonuniformity of the hole injection. We have also found that, in biased structures, the PL intensity and decay time in the V-defect regions are only moderately lower that in the V-defect-free regions thus showing no evidence of an efficient Shockley-–Read–Hall recombination. In the V-defect regions, the emission spectra experience a red shift and increased broadening, which suggests an increase of the In content and well width in the polar QWs close to the V-defects.

Enhanced performance of ambient-air processed CsPbBr3 perovskite light-emitting electrochemical cells via synergistic incorporation of dual additives

Metal halide perovskite light-emitting electrochemical cells (MHP-LECs) are promising due to their facile solution processability and exceptional optoelectrical properties. However, commercialization is hindered by poor thin-film coverage and the need for glovebox processing. This study addresses these issues by incorporating poly(ethylene oxide) (PEO) and potassium hexafluorophosphate (KPF6) into cesium lead bromide perovskite (CsPbBr3) emitting layers (EML), processed under ambient-air conditions. These perovskite composite thin films were spin-coated on a preheated substrate, and the device structure was ITO/PEDOT:PSS/EML/Al. Notably, the MHP-LEC based on CsPbBr3:PEO:KPF6 (100:65:0.2, weight ratio) exhibited pure-green emission with a peak at 524 nm and a narrow full width at half-maximum of 27 nm. Compared to a reference device (CsPbBr3:PEO (100:65, weight ratio)), the new device showed 1.5-, 4-, and 5-fold improvements in current density, electroluminescence (EL) intensity, and lifetime, respectively. These enhancements are attributed to reduced non-radiative current leakage, improved film surface coverage and passivation, and balanced charge carrier injection and transportation. This study offers a straightforward approach for processing CsPbBr3 thin films under ambient-air conditions, enhancing the EL performance of MHP-LECs.

Room-temperature electroluminescence in the InAsSbP/InAs0.95Sb0.05/InAsSbP single quantum well

The electrical and luminescent characteristics of the heterostructure with a 20 nm-wide n-InAsSbP/n-InAs0.95Sb0.05/p-InAsSbP single quantum well, grown on an n-InAs substrate by the MOVPE method, have been studied. An intense room temperature electroluminescence (EL) with a maximum near the photon energy of 0.34 eV and a FWHM of 32 meV was discovered. It was established that the EL in such single quantum well has been emitted due to type I radiative transitions between the ground levels of electrons and holes both at forward and reverse bias. The characteristics of heterostructures with a single quantum well and the active region based on a bulk InAsSb layer of the same composition have been compared.

Evaluation of Light-Induced Electroluminescence in Photovoltaic Field Applications

We present a performance analysis of the new measurement method Light-Induced Electroluminescence (LIEL) in a PV system. The LIEL method is applied to photovoltaic (PV) modules consisting of two PV module halves which are internally connected in parallel. Today’s main stream half-cell modules are constructed this way. To measure the electroluminescence of one half of the module, the other half is illuminated by an LED array. Our LIEL prototype system is a hood-based setup. It is equipped on one half with a LED array that is separated by a wall from the other half. This other half is observed by an InGaAs camera. We measure the impact of a LIEL hood misalignment to the electroluminescence intensity, the influence of the PV generator working point to the electroluminescence intensity and determine the measurement speed under realistic conditions. We show that the experimentally realized LIEL hood alignment to the PV modules is in 97.7% of the cases sufficient for acquiring high quality EL images. The LIEL system work with a switched off and on inverter. Under inverter on working condition the luminescence intensity is a function of the intensity of the sun. The effect of hood alignment and sun intensity on the luminescence intensity is successfully reproduced by an analogue electronic circuit simulation using LT Spice. The maximum measuring speed of a full module is in this study 12 s including the time for movement and alignment of the measurement hood from PV module to PV module

Maximizing Electroluminescence Intensity in Single-Ended Electrical Contact Micro-LEDs: A Strategy for Optimizing Driving Waveforms

Maximizing Electroluminescence Intensity in Single-Ended Electrical Contact Micro-LEDs: A Strategy for Optimizing Driving Waveforms

Dual-mode electrochemiluminescence sensing and phone imaging assays based on bipolar electrode for kanamycin detection

Excessive use of antibiotics will enter the water environment and soil through the biological chain, and then transfer to the human body through food, resulting in drug resistance, kidney toxicity and other health problems, so it is urgent to develop highly sensitive detection methods of antibiotics. Here, we designed a dual-mode sensor platform based on closed bipolar electrode (cBPE) electroluminescence (ECL) and mobile phone imaging to detect kanamycin in seawater. The prepared CN-NV-550 displayed extremely intense ECL signal, allowing for convenient mobile phone imaging. The cBPE was combined with DNA cycle amplification technology to prevent the mutual interference between target and the luminescent material, and realized the amplification of signal. In the presence of target Kana, Co3O4 was introduced to the cBPE anode by DNA cycle amplification product, and accelerated the oxidation rate of uric acid (UA). Thus, the electroluminescence response of CN-NV-550 on cBPE cathode was much improved due to the charge balance of the cBPE, achieving both ECL detection and mobile phone imaging assay of Kana, which much improved the accuracy and efficiency of assay. The limit of detection (LOD) in this work is 0.23 pM, and LOD for mobile phone imaging is 0.39 pM. This study integrate ECL imaging visualization of CN-NV-550 and high electrocatalytic activity of Co3O4 into cBPE-ECL detection, providing a new perspective for antibiotic analysis, and has great potential for practical applications, especially in Marine environmental pollution monitoring.

Optimizing luminous efficiency in polymer light-emitting diodes through anode oxygen-plasma treatment under diverse pressure conditions

This study investigates the impact of oxygen-plasma (O2-plasma) treatment on the microscale electrical properties of indium tin oxide (ITO) surfaces for enhancement of the luminous efficiency of polymer light-emitting diodes (PLEDs). Significant effects on conductivity distribution were observed when treatment was performed at pressures exceeding 0.4 Torr. ITO-6, the ITO treated with O2-plasma at 0.6 Torr, emerged as the preferred anode substrate for PLEDs, displaying a 72.5 % coverage of stable-conductive regions. When utilized as the anode in PLED, it exhibited a remarkable 209 % increase in average current efficiency and a 184 % enhancement in electroluminescent intensity compared to the reference PLED. These findings provide valuable insights for optimizing PLEDs through surface modification of ITO.

Localized surface plasmon-enhanced nanorod micro-LEDs with Ag nanoparticles embedded in insulating and planarizing spin-on glass

To enhance the emission of GaN-based Micro-LEDs (μLEDs), we etched uniform nanorods (NRs) on the μLED surface and filled the nanorod gaps with spin-on glass (SOG) containing mixed Ag nanoparticles (NPs). The nanorod structure creates a conducive environment for close interaction between Ag NPs and quantum wells (QWs), facilitating the coupling of Ag NPs as localized surface plasmons (LSPs) with the QWs to enhance light emission. The SOG acts as an insulating layer between Ag NPs and NRs, preventing electron leakage, while also serving as a planarization material for the nanorod structure. This configuration allows for the fabrication of a planar Indium Tin Oxide layer without short-circuiting the nanorod structure. Compared to traditional planar Micro-LEDs, NR-μLEDs with SOG-encased Ag NPs exhibit a 50% increase in electroluminescence (EL) intensity and a 56% increase in photoluminescence (PL) intensity. This work paves the way for broader applications of LSP in μLEDs.

Effects of oxygen vacancies on the optical and electrical performances of silicon-based Er doped Ga2O3 films

Effects of oxygen vacancies on the optical and electrical properties of silicon-based Er doped Ga2O3 films are investigated. The content of oxygen vacancies can be tuned by changing the Ar:O2 flow ratios during sputtering, and the films sputtered in pure Ar are proved to possess the most oxygen vacancies by the calculations of energy band structure and carrier concentration. It is found that oxygen vacancies are involved in the process of indirect Er3+ ions related emission. With more oxygen vacancies introduced, the conductivity and energy transfer efficiency of Er doped Ga2O3 films can be enhanced simultaneously, leading to the increasing electroluminescence intensity of the light-emitting devices. The optimized silicon-based devices present the maximum optical power density of ∼2 μW cm−2.

Ultraviolet electroluminescence with electrically tunable colour from epitaxial n-(0001)ZnO/p-(0001)GaN light-emitting diodes

Pulsed laser deposition technique is used to grow unintentionally n-type (0001)ZnO layers with high crystalline and morphological qualities on p-type (0001)GaN/sapphire templates. Electroluminescent devices are fabricated on these p–n heterojunctions. Oxygen pressure during growth has been found to influence strongly the crystalline and defect properties of the grown layers, which affect not only the current–voltage characteristics but also the emission properties of the electroluminescent devices. It has been observed that the electroluminescence (EL) spectra have both defects related visible and band-edge related ultraviolet (UV) transition features stemming from both GaN and ZnO sides. The study reveals that UV to visible EL intensity ratio maximizes at an optimum oxygen pressure. The relative contribution of EL originating from ZnO and GaN sides can be tuned by the applied bias, as the bias can control the depletion width and hence the carrier interdiffusion across the junction. This finding thus offers a scope to electrically tune the colour of the emitted light in these devices.

Effect of temperature on GaN-integrated optical transceiver chips.

The gallium nitride (GaN) integrated optical transceiver chip based on multiple quantum wells (MQW) structure exhibits great promise in the fields of communication and sensing. In this Letter, the effect of ambient temperature on the performance of GaN-integrated optical transceiver chips including a blue MQW light-emitting diode (LED) and a MQW photodiode (PD) is comprehensively studied. Temperature-dependent light-emitting and current-voltage characteristics of the blue MQW LEDs are measured with the ambient temperature ranging from -70°C to 120°C. The experimental results reveal a decline in the electroluminescent (EL) intensity and an obvious redshift in the emission peak wavelength of the LED with increasing ambient temperature. The light detection performance of MQW PD under different temperatures is also measured with the illumination of an external blue MQW LED, indicating an enhancement in the PD sensitivity as the temperature rises. Finally, the temperature effect on the MQW PD under the illumination of the MQW LED on the GaN-integrated optical transceiver chip is characterized, and the PD photocurrent increases with higher ambient temperature. Furthermore, the measured temperature characteristics indicate that the GaN-integrated optical transceiver chip offers a promising application potential for optoelectronic temperature sensor.

Pure Tunable Emissions from Cesium Manganese Bromide by Monitoring the Crystal Fields Through a Sustainable Approach

AbstractResearch on manganese (Mn) halide perovskite derivatives with tunable emissions and high color purity have gathered a significant amount of attention for display technology. Despite of mesmerizing optical properties, the synthesis of these all‐inorganic Mn halide compounds is followed by complex and toxic processes. Second, a precise control over the synthesis parameters is mandatory to achieve their pure emissions. Therefore, an ecologically sustainable water‐based solution approach is adapted here to tailor the phases and emissions of cesium manganese bromide (Cs‐Mn‐Br) perovskite derivatives. It is observed that a controlled injection of solution stabilizer plays a pivotal role in engineering the intrinsic properties of Mn halide perovskites. This solution stabilizer interacts with the Mn‐ions of those perovskite derivatives influencing their surrounding coordination environment and pure emission from then. A pure green emission with PLQY of 82% is achieved from as prepared Cs3MnBr5, whereas CsMnBr3 showed a red emission with PLQY of ≈20%. Encouraged by these properties phosphor‐driven light emitting diodes (LED) are designed that show a steady electroluminescence intensity. The CIE coordinates of the Cs3MnBr5 and CsMnBr3 LED prototypes are at (0.224, 0.659) and (0.688, 0.316). This study showcases simple, eco‐friendly tactics for developing green and red LED prototypes contributing toward sustainable device design.

Flexible arrays of GaN-based Micro-LEDs fabricated on different substrates by a laser lift-off process

Fabrication of flexible Micro-LEDs is becoming an important technology for flexible displays, which plays a significant role in the field of visual communication in the upcoming Internet-of-Things era and metaverse. Here, we explore high-quality laser lift-off (LLO) methods for gallium nitride (GaN)-based Micro-LED arrays using LLO technology to separate Micro-LED arrays from sapphire substrates via a KrF excimer laser system (λ = 248 nm). At the same time, the damage of GaN under high laser energy density was analyzed. Ultimately, we used viscoelastic stamp transfer technology to successfully transfer Micro-LED arrays to various types of substrates, including tape and copper foil (Cu), thus enabling applications in different scenarios. The results show that the threshold voltage and electroluminescence (EL) intensity of Micro-LEDs on the tape and Cu substrates increased slightly, and the peak of the EL spectrum was basically stable at 458 nm. Furthermore, Micro-LEDs on polyethylene terephthalate (PET) can still work normally when the bending radius of PET is 4 cm.

The luminescence of CsPbCl3 film was enhanced: A CsPbCl3/Cs4PbCl6 mixed film was formed by adding excess CsCl

In recent years, there have been numerous reports on the inter-transformation between non-luminous Cs4PbX6 nanocrystals (NCs) and luminous CsPbX3 nanocrystals (NCs). However, most of these reports have focused on the transformation between Cs4PbBr6 NCs and CsPbBr3 NCs, with little attention given to Cs4PbCl6 NCs. This paper aims to address this gap by investigating the formation of Cs4PbCl6 through the addition of excess CsCl during thermal evaporation. The presence of Cs4PbCl6 was found to passivate the CsPbCl3 film and improve its luminescence. The highest photoluminescence (PL) intensity of the sample was observed when the ratio of PbCl2 to CsCl was 1:1.17. This can be attributed to the enhanced crystal quality and reduced non-radiative recombination resulting from the presence of Cs4PbCl6. Furthermore, rapid annealing led to a two-fold increase in the PL intensity of the film. Notably, the film containing Cs4PbCl6 exhibited excellent thermal stability, maintaining a constant PL intensity within the annealing temperature range of 200°C–300 °C. This can be attributed to the prevention of grain size growth in the film due to the presence of Cs4PbCl6. Finally, the electroluminescent device test results showed that the electroluminescence intensity reached the highest at 6 V driving voltage, which was caused by the effective carrier recombination, while the ratio of PbCl2 to CsCl was 1:1.17 and the annealing temperature was 180 °C. This study provided a novel approach to enhancing the photoelectric performance of CsPbCl3.

High-temperature performance of InGaN-based amber micro-light-emitting diodes using an epitaxial tunnel junction contact

This study investigated the temperature-dependent electroluminescent (EL) performance of InGaN-based amber micro-light-emitting diodes (μLEDs) with a diameter of 40 μm using an epitaxial tunnel junction (TJ) contact for current spreading. The TJ-μLEDs could achieve a high electrical efficiency of 0.935 and a remarkable wall-plug efficiency of 4.3% at 1 A/cm2 at room temperature, indicating an excellent current injection efficiency of the TJ layers regrown by molecular beam epitaxy. Moreover, the current injection of the amber TJ-μLEDs at the forward bias could be further improved at elevated temperatures. The improvement can be explained by the enhanced tunneling probability and acceptor ionization in p-GaN based on the theoretical simulation. The redshift coefficient, which describes the temperature-dependent peak wavelength shift, is obtained as small as 0.05 nm/K, and the high-temperature-to-room-temperature EL intensity ratio is calculated as >0.56 even at a low current density of 0.5 A/cm2 at the temperatures up to 80 °C. This thermal droop behavior was attributed to the enhanced non-radiative recombination, which was confirmed by the shorter carrier lifetime measured at high temperatures.