Formation Of Electric Domains Research Articles

On the mechanism of anomalous phenomena in current-carrying magnetized plasma

The explanation of the mechanisms of anomalous resistance and diffusion of plasma, as well as the generation of fast particles, is given from a unified position on the basis of experimental results obtained in plasma in a magnetically isolated diode of an electron accelerator with a microsecond pulse duration. It is shown that oscillations of the potential and current in plasma with current occur by charge separation and the formation of electric domains with a strong field. Electric domains are generated by means of runaway electrons resulting from the redistribution of the current density and its channelling in the current-carrying plasma. An increase in plasma resistance occurs due to a decrease in the number of electrons in the current-conducting state, since some of the plasma electrons pass into layers of excess negative charge of electric domains. The speed of movement of electrons in the composition of the electric domain is much lower than the velocity of electrons in the conducting state. The nucleation of domains is accompanied by microwave emission. Quasi-neutrals in whole electrical domains are injected into the region of the anode wall. The destruction of domains leads to the appearance of plasma channels between the anode and cathode plasma. The transverse electromagnetic waves generated during the nucleation of domains capture charged particles and inject them in a direction that is perpendicular to the insulating longitudinal magnetic field. Plasma turbulence occurs due to charge separation and the generation of electrical domains that create channels between the plasma and the chamber wall, as well as generating fluxes of fast particles.

Conductivity of superlattices GaAs/AlAs with electrical domains

The conductivity of short-period GaAs/AlAs superlattices at the electrical domain formation was studied at room and liquid nitrogen temperatures. The evolution of tunneling current at sweep-up and sweep-down of the bias was investigated. The step-like decrease in current at some threshold voltage was referred to moving domain formation. The current hysteresis and periodic maximums was observed in the electric domain regime. The hysteresis was explained by the changes of electrical domain regimes along with boundary conditions. The origin of current maximum is discussed.

Carrier accumulation near electrodes in ferroelectric films due to polarization boundary conditions

We study the effect of surface polarization on the distribution of free carriers in a wide bandgap semiconductor ferroelectric (FE) film using a thermodynamic approach. We show that free carriers, namely, holes and electrons from ionizable impurities or atomic vacancies can accumulate near the film-electrode interface, if FE polarization profile has a very steep change near the surface that is specified by the extrapolation length. Such an outcome is just the opposite of what happens in a Schottky junction in a partially or fully depleted film. This is also an entirely different effect than what has been often studied in similar structures, where the work function and screening length of the electrode metal determines the electronic character of the interface. Even for low-to-moderate densities of ionizable defects with states within the bandgap close to the band edges, high densities of carriers can localize close to the electrodes in a single domain state FE film when above a critical thickness. For very low densities of such ionizable defects, short extrapolation lengths cause electrical domain formation with minimal carrier accumulation because of the already weak depolarizing fields. This is also true for films below a critical thickness with low-to-moderate densities of ionizable impurities, i.e., electrical domains get stabilized regardless of defect density. The implications of our findings for polarization controlled Schottky to Ohmic-like transition of an interface and experimental results are discussed. It is also found that interfaces of an n-type FE heterostructure can behave like a p-type depending on the barrier heights and impurity density. We conclude that, for low-to-moderate ionizable impurity densities, it is the rate of change of polarization at the interface with position rather than solely its presence that leads to carrier accumulation and that both interfaces can become Ohmic-like with opposite signs of carriers.

Bloch gain in dc-ac-driven semiconductor superlattices in the absence of electric domains

We theoretically study the feasibility of amplification and generation of terahertz radiation in dc-ac-driven semiconductor superlattices in the absence of electric domains. We find that if in addition to a dc bias a strong terahertz pump field is applied, a Bloch gain profile for a small terahertz signal can be achieved under the conditions of a positive static differential conductivity. Here, the positive differential conductivity arises, similarly to the case of a large-signal amplification scheme [H. Kroemer, arXiv:cond-mat/0009311 (unpublished)], due to modifications in dc current density caused by the application of a high-frequency ac field [K. Unterrainer et al., Phys. Rev. Lett. 76, 2973 (1996)]. Whereas the sign of absorption at low and zero frequencies is sensitive to the ac fields, the gain profile in the vicinity of the gain maximum is robust. We suggest to use this ac-induced effect in a starter for a terahertz Bloch oscillator. Our analysis demonstrates that the application of a short terahertz pulse to a superlattice allows the suppression of the undesirable formation of electric domains and the achievement of a sustained large-amplitude operation of the dc-biased Bloch oscillator.

Terahertz parametric gain in semiconductor superlattices in the absence of electric domains

The authors theoretically show that conditions for terahertz gain and conditions for formation of destructive electric domains in semiconductor superlattices are fairly different in the case of parametric generation and amplification. Action of an unbiased high-frequency electric field on a superlattice causes a periodic variation of energy and effective mass of miniband electrons. This parametric effect can result in a significant gain at some even harmonic of the pump frequency without the formation of electric domains and corruption from pump harmonics.

Electrical domains and submillimeter signal generation in AlGaN/GaN superlattices

This paper discusses the feasibility of a terahertz-signal source made of an AlGaN/GaN superlattice. The negative differential conductivity, electrical domain formation, current oscillations, and power efficiency of a perspective source are described. The superlattice geometry and conduction band profile, which are distorted by polarization fields, are related to the oscillation frequency and power efficiency of the device. The optimal Al content, superlattice period, and the parameters of the external circuit that favor submillimeter wave generation are determined.

Electrical domains and sub-millimeter signal generation in AlGaN/GaN superlattices

AbstractThe paper discusses the feasibility of a terahertz-signal source made of AlGaN/GaN superlattice. Negative differential conductivity, electrical domain formation, current oscillations, and power efficiency of a perspective source are described. We relate the superlattice geometry and conduction band profile, distorted by polarization fields, to the oscillation frequency and power efficiency of the device. We also determine the optimal Al content, superlattice period, and the parameters of external circuit that favor sub-millimeter wave generation.

Non-linear transport and topology of dielectric breakdown

Isolators subjected to a sufficiently high electric field become conductors due to electrical breakdown. This transformation into conductor is an example of extremely non-linear (non-ohmic) conductivity. A consequence of this non-linearity is that the topology of the electric field and current distribution is not determined anymore by the externally applied voltages but rather by the local, time dependent, conductivities. Experiments of breakdown in air (Sparks) and in semi-insulating GaAs are discussed as examples of, respectively, current filaments and of electrical domain formation. For current filaments, a magnetic field is shown to lead to a “fractal-like” pattern with a “dimension” determined by the external field.

Gunn domains and stimulated far-infrared radiation in p-Ge under uniaxial deformation

The influence of electrical domain formation on far-infrared radiation in p-Ge at uniaxial compression was studied. The intensity of the spontaneous radiation was shown to be controlled by the domain length. The reciprocal influence of domain instability and stimulated far-IR emission was observed.

Electrical Domain Formation in the Dark after Interrupting Photo-Excitation in Photoconductive CdS and (Cd, Zn)S Thin Films

Electrical Domain Formation in the Dark after Interrupting Photo-Excitation in Photoconductive CdS and (Cd, Zn)S Thin Films