Abstract
The conductivity of short-period GaAs/AlAs superlattices at the electrical domain formation was studied at room and liquid nitrogen temperatures. The evolution of tunneling current at sweep-up and sweep-down of the bias was investigated. The step-like decrease in current at some threshold voltage was referred to moving domain formation. The current hysteresis and periodic maximums was observed in the electric domain regime. The hysteresis was explained by the changes of electrical domain regimes along with boundary conditions. The origin of current maximum is discussed.
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