Abstract
AbstractThe paper discusses the feasibility of a terahertz-signal source made of AlGaN/GaN superlattice. Negative differential conductivity, electrical domain formation, current oscillations, and power efficiency of a perspective source are described. We relate the superlattice geometry and conduction band profile, distorted by polarization fields, to the oscillation frequency and power efficiency of the device. We also determine the optimal Al content, superlattice period, and the parameters of external circuit that favor sub-millimeter wave generation.
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