Efficient Frequency Generation Research Articles

Efficient frequency generation in phoXonic cavities based on hollow whispering gallery mode resonators

We report on nonlinear optical effects on phoxonic cavities based on hollow whispering gallery mode resonators pumped with a continuous wave laser. We observed stimulated scattering effects such as Brillouin and Raman, Kerr effects such as degenerated and non-degenerated four wave mixing, and dispersive wave generation. These effects happened concomitantly. Hollow resonators give rise to a very rich nonlinear scenario due to the coexistence of several family modes.

A 2-GHz Pulse Injection-Locked Rotary Traveling-Wave Oscillator

This paper proposes a scalable and efficient frequency multiplication technique that synthesizes a multi-phase clock with finely adjustable output taps. It uses a pulse injection locked rotary traveling-wave oscillator (RTWO) with switched capacitors and complementary varactor pairs to achieve a 1.7–2-GHz tuning range and to implement the fine phase adjustment. The worst case phase-tuning resolution is 0.36°. The design is implemented in IBM’s 130-nm CMOS technology, and consumes a total power of 28.4 mW. Locked to a clean 679-MHz reference, it has a phase-noise performance of $-{\text {132 dBc/Hz}}$ at 100-kHz offset from 2.039 GHz. It achieves 39-fs integrated root mean square (rms) jitter from 1 kHz to 40-MHz offset, for a ${\text {Jitter}}^{2} \ast {\text {Power Figure of Merit}}$ (FOM) of $-{\text {251 dB}}$ .

Efficient heterostructure doped-barrier varactor diodes

Doped-barrier heterostructure varactor diodes are suggested for efficient frequency multiplication of the microwave radiation. It is shown that the efficiency of the heterostructure-barrier varactor is significantly enhanced if the undoped barrier is replaced by the doped one. The analysis is carried out using Boltzmann statistics. The analytical results are compared to the results of Monte Carlo simulations obtained by taking into account Fermi–Dirac statistics. The results of Monte Carlo calculations of the capacitance-voltage characteristics of the In0.53Ga0.47As/AlAs and InN/GaN doped-barrier varactor diodes are presented.

An efficient nonlinear frequency multiplication mechanism in ferrite-loaded waveguide structures

A numerical approach for the solution of three-dimensional nonlinear diffraction problems, based on nonlinear Maxwell's equations, complemented by the equation of motion of the magnetization vector in a ferromagnet, is developed. We have carried out the rigorous nonlinear analysis of propagation, diffraction, and nonlinear interactions of waves in waveguide structures, loaded with a strongly nonlinear ferrite insertion. The numerical analysis shows an efficient frequency multiplication mechanism. It is shown how the efficiency of frequency multiplication depends on the magnitude of the incident wave, the value and the orientation of bias magnetic field, and the length of the ferrite. A reciprocity effect for the second time harmonics wave is predicted.

A novel 3-D integrated HFET/RTD frequency multiplier

A merged heterostructure field-effect transistor/resonant tunneling diode (HFET/RTD) combination is proposed to act as a (sub)millimeter wave source via highly efficient frequency multiplication and its functionality is demonstrated at intermediate frequency. On a semi-insulating InP-substrate a HFET followed by a double barrier RTD-layer sequence is grown in a single molecular beam epitaxy (MBE)-run. A novel monolithic frequency multiplier circuitry is developed where the RTD is used as load in contrast to other concepts where the RTD is inserted in the input of a three-terminal device. The resulting output voltage is rectangular type and rich in higher odd harmonics. This approach avoids classical disadvantages of the RTD because biasing in the negative-differential-regime is not required and bistability of the I-V-characteristic is used rather than the negative differential resistance. The small signal parameters of the single devices realized with optical lithography, wet etching, and self-aligned process technology are used as input data for a microwave design software (MDS) and the frequency multiplication is modeled up to submillimeter wave frequencies.

DC and large-signal time-dependent electron transport in heterostructure devices: an investigation of the heterostructure barrier varactor

The DC and large-signal time-dependent electron transport properties of Heterostructure Barrier Varactors (HBV) are investigated using a physical model which combines drift-diffusion current transport through the heterostructure bulk with thermionic and thermionic-field emission currents imposed at the abrupt heterointerfaces in a fully self-consistent manner. A fast and accurate hydrodynamic device simulator for generic unipolar InGaAs-InAlAs on InP, InGaAs-InP on InP, and GaAs-InGaAs-AlGaAs on GaAs has been developed based on this model. The experimentally observed current-voltage and capacitance-voltage characteristics of GaAs-AlGaAs and GaAs-InGaAs-AlGaAs are compared with the simulated results over a wide range of DC bias. Large-signal time-dependent simulations at a pump frequency of 100 GHz confirm the odd-harmonic operation of these devices and indicate that multiple barrier should provide efficient frequency multiplication, especially in high order frequency multipliers, broadband frequency triplers, and quasi-optical tripler arrays.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

DC and large-signal time-dependent electron transport in heterostructure devices: an investigation of the heterostructure barrier varactor

The DC and large-signal time-dependent electron transport properties of Heterostructure Barrier Varactors (HBVs) are investigated using a physical model which combines drift-diffusion current transport through the heterostructure bulk with thermionic and thermionic-field emission currents imposed at the abrupt heterointerfaces in a fully self-consistent manner. A fast and accurate hydrodynamic device simulator for generic unipolar InGaAs-InAlAs on InP, InGaAs-InP on InP, and GaAs-InGaAs-AlGaAs on GaAs HBVs has been developed based on this model. The experimentally observed current-voltage and capacitance-voltage characteristics of GaAs-AlGaAs and GaAs-InGaAs-AlGaAs HBVs are compared with the simulated results over a wide range of DC bias. Large-signal time-dependent simulations at a pump frequency of 100 GHz confirm the odd-harmonic operation of these devices and indicate that multiple barrier HBVs should provide efficient frequency multiplication, especially in high order frequency multipliers, broadband frequency triplers, and quasi-optical tripler arrays. >

Efficient frequency multiplication by odd factors without idlers

Antiparallel connection of two varactors in a multiplier as a means of efficient idlerless frequency multiplication by odd factors is discussed. For a tripler, the dependence of efficiency, output and dissipated power on input frequency is shown. A practical multiplier and its properties are described.