Abstract
Doped-barrier heterostructure varactor diodes are suggested for efficient frequency multiplication of the microwave radiation. It is shown that the efficiency of the heterostructure-barrier varactor is significantly enhanced if the undoped barrier is replaced by the doped one. The analysis is carried out using Boltzmann statistics. The analytical results are compared to the results of Monte Carlo simulations obtained by taking into account Fermi–Dirac statistics. The results of Monte Carlo calculations of the capacitance-voltage characteristics of the In0.53Ga0.47As/AlAs and InN/GaN doped-barrier varactor diodes are presented.
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