Optical lithography is the method of choice for mass production of electronic aswell as acoustic devices. Cost issues, in particular, make it superior over slow buthigh-resolution methods, such as electron beam lithography. Also, itsapplicability for nonconductive substrates is an important feature for acousticdevice fabrication on ceramics. In order to be able to continue the use ofdiffraction-limited optical lithography, new schemes have been developedthat enhance the resolution. Rather complex phase-shifting masks, forinstance, alter both the amplitude and the phase of the exposing light andlead to higher resolution. However, by using an elastomeric phase maskderived from a photoresist master (made by conventional photolithography),features as small as 90 nm have been demonstrated. We report on theapplication of the near-field phase shift technique for the fabrication ofsurface acoustic wave (SAW) devices. This technique is best suited for thefabrication of narrow electrode gap SAW devices that are designed forthe efficient SAW excitation at higher harmonics. The combination ofnear-field phase shift lithography with narrow-gap SAW designs thus opensup a way for simple and low-cost SAW devices operating above 5 GHz.
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