Abstract
Thin film epitaxial heterostructures consisting of and /Si have been studied theoretically with interdigital transducer (IDT) electrodes at various locations. The thickness of each individual layer has been optimized for achieving an efficient SAW performance with a high electromechanical coupling coefficient. The structural feasibility and practical implications of various device configurations for an acousto-optical device are discussed. The introduction of a thin non-piezoelectric over-layer onto a piezoelectric film is found to enhance the electromechanical coupling coefficient . In a symmetrical /IDT/ waveguide structure the maximum value of is found to increase from 2.438 to 9.23% for a variation in the thickness of the over-layer in the range 0-0.12. Symmetrical and asymmetrical waveguide structures formed with and thin films in combination have been examined and a symmetrical waveguide structure (/IDT//Si) is found to exhibit a high acousto-optical figure of merit and % for a device operating with the fundamental mode at wavelength m.
Published Version
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