Effect Of Deposition Temperature Research Articles

Optimizing Charge Transport and Band-Offset in Silicon Heterojunction Solar Cells: Impact of TiO2 Contact Deposition Temperature

Abstract Carrier selective contacts are a primary requirement for fabricating silicon heterojunction solar cells (SHSCs). TiO2 is a prominent carrier selective contact in SHSCs owing to its excellent optoelectronic features such as suitable band offset, work function, and cost-effectiveness. Herein, we fabricated simple SHSCs in an Al/TiO2/p-Si/Ti/Au device configuration. Ultrathin 3 nm TiO2 layers were deposited onto a p-type silicon substrate using the atomic layer deposition method. The deposition temperature of TiO2 layers varied from 100 °C to 250 °C. X-ray photoelectron spectroscopic studies suggest that deposition temperature highly affects the chemical states of TiO2 and reduces the formation of defective state densities at the Fermi energy. The optical band gap values of TiO2 layers are also altered from 3.13 eV to 3.27 eV when the deposition temperature increases. The work function tuning from -5.13 eV to -4.83 eV has also been observed in TiO2 layers, suggesting the variation in Fermi level tuning, which arises due to changes in carrier concentrations at higher temperatures. Several device parameters, such as ideality factor, trap density, reverse saturation current density, barrier height, etc., have been quantified to comprehend the effects of deposition temperature on photovoltaic device performance. The results suggest that the deposition temperature significantly influences the charge transport and device performance. At an optimum temperature, a significant reduction in charge carrier recombination and trap state density has been observed, which helps to improve power conversion efficiency.

Simulation Study of Crystalline Al2O3 Thin Films Prepared at Low Temperatures: Effect of Deposition Temperature and Biasing Voltage

In this paper, classical molecular dynamics simulations were used to explore the impact of deposition temperature and bias voltage on the growth of Al2O3 thin films through magnetron sputtering. Ion energy distributions were derived from plasma mass spectrometer measurements. The fluxes of deposited particles (Ar+, Al+, and O−) were categorized into low, medium, and high energies, and the results show that the films are dominated by amorphous Al2O3 at low incident energies without applying bias. As the deposition temperature increased, the crystallinity of the films also increased, with the crystals predominantly consisting of γ-Al2O3. The crystal content of the deposited films increased when biased with −20 V compared to when no bias was applied. Crystalline films were successfully obtained at a deposition temperature of 773 K with a −20 V bias. When biased with −40 V, crystals could be obtained at a lower deposition temperature of 573 K. Increasing the bias enables the particles to have higher energy to overcome the nucleation barrier of the crystallization process, leading to a greater degree of film crystallization. At this stage, the average bond length between Al-O is measured to be approximately 1.89 Å to 1.91 Å, closely resembling that of the crystal.

Effect of deposition temperature on growth of Zinc oxide Nanorods on Zinc oxide thin film for Optoelectronics and Sensing Applications

Effect of deposition temperature on growth of Zinc oxide Nanorods on Zinc oxide thin film for Optoelectronics and Sensing Applications

The Effect of Deposition Temperature on TiN Thin Films for the Electrode Layer of 3D Capacitors Prepared by Atomic Layer Deposition

The TiN thin film is considered a promising electrode layer for 3D capacitors. In this study, TiN thin films were prepared on Si substrates using atomic layer deposition (ALD) at various temperatures from 375 °C to 475 °C. The crystallization behavior, microstructure, and conductance properties of those TiN thin films were investigated. The resistivity of TiN thin films deposited on Si wafers can reach as low as 128 μΩ·cm. TiN thin films showed lower resistivity and worse uniformity with the deposition temperature increasing. In addition, the aging of TiN thin films may weaken the device performance. Optimized deposition parameters were found and full-coverage deposition of thin films on the wall of deep holes with an aspect ratio of approximately 14 has been successfully achieved. The results would be a good reference for the development of 3D capacitors and other microelectronics components.

Ni-W composite coating reinforced with CrN nanoparticles on X80 pipeline steel: Preparation and characterization

X80 pipeline steel is crucial for oil and gas pipelines. Friction between particulate matter and the inner wall causes abrasive wear during transport, while corrosive environments further degrade the pipeline, leading to leaks. In this study, a nanoscale Ni-W-CrN composite coating was successfully prepared on X80 steel via electrodeposition for protection. The coating's surface morphology, microstructure, and composition were analyzed. The effects of CrN nanoparticle concentration and deposition temperature on the coating's structure, wear, and corrosion resistance were investigated. At 10 g/L CrN and 60°C, the Ni-W-CrN film showed a fine-grained surface with 8.13 wt% CrN, achieving 810 HV microhardness and improving wear and corrosion resistance by 81 % and 89 % compared to Ni-W coatings.

Substrate Temperature Effect on the Structural, Optical and Morphological Proprties of Cobalt Sulfide Thin Films Deposited Using Spray Pyrolisis

Abstract Thin films of cobalt sulfide were grown on glass substrates at four different temperatures (250 °C, 300 °C, 350 °C and 400 °C) using spray-pyrolysis technique. The precursor solutions were prepared using cobalt chloride and thiourea. The effect of deposition temperature on the structural, morphological, and optical properties of cobalt sulfide thin films was investigated using different experimental techniques such as X-ray diffraction (XRD), and UV-visible spectrophotometry, Fourier Transform Infrared Spectroscopy (FT-IR) and four-probe method. The XRD analysis showed that crystallite size varies from 9.76 to 14.11 nm with increasing the deposition temperature. UV-visible data analysis shows a decrease in the band gap energies with increasing temperature (1.82 eV for 250 °C, 1.76 eV for 300 °C, 1.72 eV for 350 °C, and 1.65 eV for 400 °C). The analysis of the chemical composition by FTIR confirmed the presence of Co, S elements. On the other hand, the electrical conductivity of the cobalt sulfide thin films increased owing to the increase in the crystallite size and reduction of defects density.

Impact of deposition temperature on persistent photoconductivity of SnO2 thin films deposited using spray pyrolysis technique suitable in optoelectronic synaptic devices

In this study, nanocrystalline tin oxide thin films that exhibited enhanced persistent photoconductivity (PPC) were prepared using spray pyrolysis technique. The effect of deposition temperature on different aspects of photoconductivity of these films were analysed using different characterization techniques. Raman analysis confirmed the tetragonal rutile structure of the films and also indicated their nanocrystalline nature, while XPS analysis verified the presence and oxidation states of tin and oxygen in the films. The films demonstrated UV sensing capability under above-bandgap illumination, generating electron-hole pairs and enhancing electrical conductivity. The deposition temperature of the film influenced their photocurrent characteristics, showcasing varied responses in terms of photosensitivity and photocurrent. Enhancement of photoresponse was observed with the increase in deposition temperatures of the samples. Notably, films deposited at 450 and 500 °C exhibited the more persistent photocurrent at the tested deposition temperatures. The surface defects, oxygen vacancies and grain boundaries played a significant role in sustaining PPC by ionizing vacancies and creating persistent carriers even after light exposure by trapping free carriers and impeding recombination. From the exponential fitting and extrapolation of the decay curves, the sample prepared at 450 °C was observed to be the most suitable film in application point of view for fabricating devices that make use of persistent photoconductivity. Overall, this work highlights the effectiveness of modulation of deposition temperature in influencing photoconductor parameters of spray pyrolyzed tin oxide films, offering potential applications in non-volatile memory, bionic optoelectronics, neuromorphic computing and bioelectronics.

Effects of Deposition Temperature on Phase Transition of Amorphous Ice

Effects of Deposition Temperature on Phase Transition of Amorphous Ice

Phase composition, microstructure and mechanical properties of CVD Ti–B–N coatings deposited at different temperatures guided by thermodynamic calculations

TiBN coatings, as materials with broad potential applications, have received much attention in surface engineering in recent years. Within this work, the chemical vapor deposition (CVD) phase diagrams of TiBxNy coatings were calculated and the effects of deposition temperature (830–920 °C) on the microstructure, phase composition and mechanical properties of CVD TiBxNy coatings were investigated. The TiB0.61N0.84 and TiB0.61N0.81 coatings deposited at 830 and 860 °C have a particle-like surface, the TiB0.56N0.88 and TiB0.55N0.92 coatings deposited at 890 and 920 °C exhibit needle-like characteristic. XPS and TEM results indicate that TiBxNy coatings consist of nanocrystalline TiN and TiB2 embedded in amorphous TiB and BN matrix. The TiB0.61N0.84 coating exhibits the highest hardness of 40.7 GPa. The hardness of the coatings decreases as the deposition temperature increases. The presently developed approach of thermodynamic calculations and key experiments is equally valid for the efficient deposition of other CVD coatings.

Effect of post-deposition heat treatment on microstructure and mechanical properties of NASA HR-1 cold spray coatings

The primary goal of this work was to examine the impact of heat treatment on the evolution of microstructure and mechanical properties of NASA HR-1 cold spray coatings. Coatings were produced employing a high-pressure cold spray system using N2 and He process gases and the effect of process gas and deposition temperature on the microstructure and mechanical properties of the coatings was examined. Microstructural characterization was performed using optical microscopy, scanning electron microscopy, micro X-ray computed tomography, and electron backscatter diffraction. NASA HR-1 coatings produced with He process gas exhibited improved plastic deformation and resulted in the lowest porosity compared to those deposited with N2 process gas. All coatings showed brittle failure with limited ductility in the as-deposited condition. Heat treatment of the NASA HR-1 cold spray coatings was performed at 550 °C and 950 °C for 1 h to improve the mechanical strength of the coatings. Heat treatment improved the particle bonding and enhanced the mechanical properties of the cold spray coatings. Heat treatment performed at 550 °C resulted in higher mechanical strength of coatings, whereas the heat treatment performed at 950 °C resulted in recrystallized microstructure and improved ductility of the coatings. However, heat treatment at 950 °C resulted in forming the Eta (η) phase and Ni-Ti intermetallics in all the NASA HR-1 cold spray coatings. The overall results suggest that using He as process gas contributed to reduced porosity and enhanced mechanical properties of the cold spray coatings.

Effects of the LPCVD Gate Dielectric Deposition Temperature on GaN MOSFET Channels and the Root Causes at the SiO2-GaN-Interface

Effects of the LPCVD Gate Dielectric Deposition Temperature on GaN MOSFET Channels and the Root Causes at the SiO₂-GaN-Interface

Effect of deposition temperature on the tribo-mechanical properties of nitrogen doped DLC thin film

The tribomechanical characteristics of diamond-like carbon (DLC) coatings are notably superior to other hard coatings, making them highly desirable for industrial applications. This study focuses on the synthesis of nitrogen-doped DLC (N-DLC) films through chemical vapor deposition (CVD) methods, with an emphasis on varying the deposition temperature. Comprehensive characterization techniques such as atomic force microscopy (AFM), scanning electron microscopy (SEM), and nanoindentation were employed to investigate the morphological and mechanical attributes of these coatings. The thickness of the films, measured using a Dektak profilometer, demonstrated an increase from 1.9 to 2.8 µm as the deposition temperature rose. Nanoindentation testing revealed that the film deposited at 900°C exhibited the highest hardness (H) and modulus of elasticity (E), measuring 21.95 and 208.3 GPa, respectively. Conversely, the film deposited at 1,000°C showed the lowest values, with H and E at 14.23a and 141.9 GPa, respectively. The H/E ratio of the coatings initially rose from 0.096 to 0.106 as the deposition temperature increased from 800°C to 900°C. However, for deposition temperatures exceeding 900°C the H/E ratio began to decline.

The effect of deposition rate and temperature on the structure and ferroelectric properties of pulsed laser deposited Bi0.95Dy0.05FeO3 thin films

In this study, the structural and ferroelectric properties of Bi0.95Dy0.05FeO3 (BDFO) thin films prepared using pulsed laser deposition (PLD) under various deposition rates (Dr) and substrate temperatures (Ts) are investigated. Regardless of Dr in the range of 1.0–3.0 Å/s, a predominant crystallographic orientation, BDFO(001), and similar microstructure are consistently identified for BDFO films at Ts = 500 °C. Stress analysis revealed the distinct stress states with Dr. Ferroelectric properties might depend on stress in this case. The compressive stress found for the film at Dr = 3.0 Å/s results in enhanced polarization, with a 2Pr of 180 μC/cm2. In contrast, tensile stress for the film at Dr = 1.0 Å/s exhibits a lower 2Pr = 106 μC/cm2. Besides, XRD results for the films at different Ts demonstrated that the optimal temperature for BDFO growth is Ts = 500 °C, which exhibits the lowest leakage current density due to the suppressed vacancies and improved crystallinity. These findings provide comprehensive insights into the structural and ferroelectric properties of BDFO films, elucidating the impact of deposition rate on their characteristics, and significantly improving ferroelectric properties of BDFO films for the applications.

The Effect of Deposition Temperature on Structural, Morphological, and Dielectric Properties of Yttria-Doped Zirconia Thin Films

The aim of this study was to investigate the effect of deposition temperature on the structural, optical, morphological, and dielectric properties of yttria-stabilised zirconia (YSZ) films prepared by sol-gel spin-coating method. X-ray diffraction (XRD) measurements of YSZ films showed that the peaks of the cubic phase were prominent and the peak intensities increased with deposition temperature. The crystallite size, dislocation density, and microstrain of the thin films were identified by XRD. It was observed that the crystal size of the YSZ thin films increased from 16 nm to 22 nm with the deposition temperature. The surface roughness of the thin films was found to have changed as revealed by Atomic Force Microscopy (AFM) measurements. The roughness increased from 7.72 nm to 11.92 nm with increasing temperature. The optical transmittance of the YSZ thin films was investigated in the wavelength range 200-900 nm and was found to increase slightly with increasing deposition temperature. Metal-Oxide-Semiconductor (MOS) devices were fabricated from these YSZ materials for dielectric characterization. The dielectric properties of the Ag/YSZ/n-Si MOS structure were investigated. It was found that the capacitance, conductivity and other dielectric parameters of these structures are strongly frequency dependent.

Influence of different temperatures and pH on structural, morphological, and electrochemical properties of Cu2O thin films by electrodeposition in acidic media

The present work describes the effect of deposition temperatures and pH values on structural, morphological, and electrochemical properties of cuprous oxide (Cu2O) thin films deposited on the conductive SnO2 glass substrates by using electrodeposition technique in an acidic system. The chronoamperometry curve of the solution was tested on an electrochemical workstation. X-ray diffraction patterns indicate that the deposited films have better crystallinity which is deposited at the deposition temperature of 50 °C and pH value of 5–6. Scanning electron microscopy displays that surface morphology of the deposited films varied greatly with the deposition temperature and pH value rising. The results of quantitative study of the target product films by Energy Dispersive Spectrometer (EDS) show that they are all in line with the element content ratio of Cu2O. By measuring the resistivity and conductivity of the deposited films, it was found to be in the semiconductor range.

Synergistic effect of deposition temperature and substrate bias on structural, mechanical, stability and adhesion of TiN thin film prepared by reactive HiPIMS

Titanium nitride (TiN) thin films continue to attract unprecedented attention due to their favourable mechanical, thermal, electrical and chemical properties. These properties depend, among others, on the morphology and the architecture of the thin film, which can be tuned with different configurations of the deposition parameters. This study presents an experimental investigation to tune the properties of TiN thin film deposited using reactive High-power impulse magnetron sputtering (HiPIMS) at different deposition temperatures (without heating (RT) and 400 °C) and substrate bias potentials (of floating, ground, −20 V, −40 V and −60 V). It is demonstrated that the morphological, structural, and mechanical properties of TiN can be tailored by controlling the deposition temperature and substrate potential bias to deposit dense thin films. A maximum hardness of 30 GPa was achieved for the thin film deposited at RT with a bias voltage of −60 V. The failure mechanism of the fracture toughness exhibited an isotropic behaviour at an applied load of 1 and 2 N respectively, for thin films deposited at RT. In contrast, an anisotropic behaviour was observed in the thin film deposited at a temperature of 400 0C.Overall, the thin film deposited at a temperature of 4000C showed an improved fracture toughness resistance (KIC) than the thin films deposited at RT. The use of bias potential was also observed to be beneficial for improving the KIC of the TiN thin films.

Preparation of a new B-CNTs/PSSF composite catalyst for catalytic wet peroxide oxidation of phenol in structured fixed bed

A new structured catalyst consisting of boron-doped carbon nanotubes growing directly on paper-like stainless steel fibers support (B-CNTs/PSSF) was developed for continuous catalytic wet peroxide oxidation (CWPO) of phenol in a structured fixed bed. Firstly, B-CNTs/PSSF was synthesized by chemical vapor deposition (CVD) with phenyboronic acid as a single precursor and CNTs/PSSF was prepared with camphor for comparison. Secondly, the effects of different deposition temperatures, deposition times, and phenylboronic acid dosages on the morphology and properties of B-CNTs were investigated, respectively. The results verified that under the conditions of deposition temperature of 750 °C, deposition time of 20 min, and phenylboronic acid dosage of 2 g, the B-CNTs/PSSF composite catalyst with uniform growth density, wavy and kinked morphology, abundant oxygen-containing functional groups and defect sites, and boron-doped content of 2.96% was successfully prepared. Then, the performance of B-CNTs/PSSF for continuous CWPO of phenol was evaluated. Catalytic results revealed that the B-CNTs/PSSF showed excellent catalytic activity in phenol degradation within 7 h (phenol conversion reached about 100% and total organic carbon (TOC) conversion was up to 68%). In contrast, the average phenol and TOC conversion of CNTs/PSSF were about 75% and 35%, respectively. It indicated that boron doping endowed CNTs with higher catalytic activity.

Effects of deposition temperature on microstructures and ablative properties of SiC coatings prepared by CVD from methylsilane

Using the methylsilane (MS) as a gas precursor, SiC coatings were prepared on the surface of graphite by the chemical vapor deposition (CVD) method at different deposition temperatures. The effects of temperature on the deposition rate, microstructures and ablative properties of SiC coatings were investigated systematically. The results showed that the SiC deposition rate of SiC coating using MS at 1000 °C was 50–120 μm/h, which was much higher than that using methyltrichlorosilane (5–10 μm/h). The SiC coatings deposited at lower temperatures (900–1000 °C) exhibited smooth and spherical compact packing morphology, while the SiC coatings deposited at higher temperatures (1100–1200 °C) appeared to possess an irregular cauliflower morphology with an significantly increased size of SiC particles. Therefore, the SiC coating prepared at deposition temperature of 1000 °C had suitable density, roughness, and uniform size of coating microstructure. Meanwhile, the mass ablation rate and linear ablation rate of the obtained SiC coating were respectively 0.0096 mg/s and 0.3750 μm/s after plasma ablation at 2300 °C for 80 s, exhibiting excellent ablative resistance. This study provided a theoretical and technical foundation for the preparation of SiC coating using the MS as the gas precursor by the CVD method.

Effects of Deposition Temperature and Working Pressure on the Thermal and Nanomechanical Performances of Stoichiometric Cu3N: An Adaptable Material for Photovoltaic Applications.

The pursuit of efficient, profitable, and ecofriendly materials has defined solar cell research from its inception to today. Some materials, such as copper nitride (Cu3N), show great promise for promoting sustainable solar technologies. This study employed reactive radio-frequency magnetron sputtering using a pure nitrogen environment to fabricate quality Cu3N thin films to evaluate how both temperature and gas working pressure affect their solar absorption capabilities. Several characterization techniques, including X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), Raman spectroscopy, scanning electron microscopy (SEM), nanoindentation, and photothermal deflection spectroscopy (PDS), were used to determine the main properties of the thin films. The results indicated that, at room temperature, it is possible to obtain a material that is close to stoichiometric Cu3N material (Cu/N ratio ≈ 3) with (100) preferred orientation, which was lost as the substrate temperature increases, demonstrating a clear influence of this parameter on the film structure attributed to nitrogen re-emission at higher temperatures. Raman microscopy confirmed the formation of Cu-N bonds within the 628-637 cm-1 range. In addition, the temperature and the working pressure significantly also influence the film hardness and the grain size, affecting the elastic modulus. Finally, the optical properties revealed suitable properties at lower temperatures, including bandgap values, refractive index, and Urbach energy. These findings underscore the potential of Cu3N thin films in solar energy due to their advantageous properties and resilience against defects. This research paves the way for future advancements in efficient and sustainable solar technologies.

Effects of deposition temperature on the mechanical and structural properties of amorphous Al–Si–O thin films prepared by radio frequency magnetron sputtering

Aluminosilicate (Al–Si–O) thin films containing up to 31 at.% Al and 23 at.% Si were prepared by reactive RF magnetron co-sputtering. Mechanical and structural properties were measured by indentation and specular reflectance infrared spectroscopy at varying Si sputtering target power and substrate temperature in the range 100 to 500 °C. It was found that an increased substrate temperature and Al/Si ratio give denser structure and consequently higher hardness (7.4 to 9.5 GPa) and higher reduced elastic modulus (85 to 93 GPa) while at the same time lower crack resistance (2.6 to 0.9 N). The intensity of the infrared Si-O-Si/Al asymmetric stretching vibrations shows a linear dependence with respect to Al concentration. The Al–O–Al vibrational band (at 1050 cm−1) shifts towards higher wavenumbers with increasing Al concentration which indicates a decrease of the bond length, evidencing denser structure and higher residual stress, which is supported by the increased hardness. The same Al–O–Al vibrational band (at 1050 cm−1) shifts towards lower wavenumber with increasing substrate temperature indicating an increase in the average coordination number of Al.