Synergistic effect of deposition temperature and substrate bias on structural, mechanical, stability and adhesion of TiN thin film prepared by reactive HiPIMS

Abstract

Titanium nitride (TiN) thin films continue to attract unprecedented attention due to their favourable mechanical, thermal, electrical and chemical properties. These properties depend, among others, on the morphology and the architecture of the thin film, which can be tuned with different configurations of the deposition parameters. This study presents an experimental investigation to tune the properties of TiN thin film deposited using reactive High-power impulse magnetron sputtering (HiPIMS) at different deposition temperatures (without heating (RT) and 400 °C) and substrate bias potentials (of floating, ground, −20 V, −40 V and −60 V). It is demonstrated that the morphological, structural, and mechanical properties of TiN can be tailored by controlling the deposition temperature and substrate potential bias to deposit dense thin films. A maximum hardness of 30 GPa was achieved for the thin film deposited at RT with a bias voltage of −60 V. The failure mechanism of the fracture toughness exhibited an isotropic behaviour at an applied load of 1 and 2 N respectively, for thin films deposited at RT. In contrast, an anisotropic behaviour was observed in the thin film deposited at a temperature of 400 0C.Overall, the thin film deposited at a temperature of 4000C showed an improved fracture toughness resistance (KIC) than the thin films deposited at RT. The use of bias potential was also observed to be beneficial for improving the KIC of the TiN thin films.