Effect Of Deposition Temperature Research Articles

Effects of Deposition Temperature on Phase Transition of Amorphous Ice

Effects of Deposition Temperature on Phase Transition of Amorphous Ice

Phase composition, microstructure and mechanical properties of CVD Ti–B–N coatings deposited at different temperatures guided by thermodynamic calculations

TiBN coatings, as materials with broad potential applications, have received much attention in surface engineering in recent years. Within this work, the chemical vapor deposition (CVD) phase diagrams of TiBxNy coatings were calculated and the effects of deposition temperature (830–920 °C) on the microstructure, phase composition and mechanical properties of CVD TiBxNy coatings were investigated. The TiB0.61N0.84 and TiB0.61N0.81 coatings deposited at 830 and 860 °C have a particle-like surface, the TiB0.56N0.88 and TiB0.55N0.92 coatings deposited at 890 and 920 °C exhibit needle-like characteristic. XPS and TEM results indicate that TiBxNy coatings consist of nanocrystalline TiN and TiB2 embedded in amorphous TiB and BN matrix. The TiB0.61N0.84 coating exhibits the highest hardness of 40.7 GPa. The hardness of the coatings decreases as the deposition temperature increases. The presently developed approach of thermodynamic calculations and key experiments is equally valid for the efficient deposition of other CVD coatings.

Effect of post-deposition heat treatment on microstructure and mechanical properties of NASA HR-1 cold spray coatings

The primary goal of this work was to examine the impact of heat treatment on the evolution of microstructure and mechanical properties of NASA HR-1 cold spray coatings. Coatings were produced employing a high-pressure cold spray system using N2 and He process gases and the effect of process gas and deposition temperature on the microstructure and mechanical properties of the coatings was examined. Microstructural characterization was performed using optical microscopy, scanning electron microscopy, micro X-ray computed tomography, and electron backscatter diffraction. NASA HR-1 coatings produced with He process gas exhibited improved plastic deformation and resulted in the lowest porosity compared to those deposited with N2 process gas. All coatings showed brittle failure with limited ductility in the as-deposited condition. Heat treatment of the NASA HR-1 cold spray coatings was performed at 550 °C and 950 °C for 1 h to improve the mechanical strength of the coatings. Heat treatment improved the particle bonding and enhanced the mechanical properties of the cold spray coatings. Heat treatment performed at 550 °C resulted in higher mechanical strength of coatings, whereas the heat treatment performed at 950 °C resulted in recrystallized microstructure and improved ductility of the coatings. However, heat treatment at 950 °C resulted in forming the Eta (η) phase and Ni-Ti intermetallics in all the NASA HR-1 cold spray coatings. The overall results suggest that using He as process gas contributed to reduced porosity and enhanced mechanical properties of the cold spray coatings.

Effects of the LPCVD Gate Dielectric Deposition Temperature on GaN MOSFET Channels and the Root Causes at the SiO2-GaN-Interface

Effects of the LPCVD Gate Dielectric Deposition Temperature on GaN MOSFET Channels and the Root Causes at the SiO₂-GaN-Interface

Effect of deposition temperature on the tribo-mechanical properties of nitrogen doped DLC thin film

The tribomechanical characteristics of diamond-like carbon (DLC) coatings are notably superior to other hard coatings, making them highly desirable for industrial applications. This study focuses on the synthesis of nitrogen-doped DLC (N-DLC) films through chemical vapor deposition (CVD) methods, with an emphasis on varying the deposition temperature. Comprehensive characterization techniques such as atomic force microscopy (AFM), scanning electron microscopy (SEM), and nanoindentation were employed to investigate the morphological and mechanical attributes of these coatings. The thickness of the films, measured using a Dektak profilometer, demonstrated an increase from 1.9 to 2.8 µm as the deposition temperature rose. Nanoindentation testing revealed that the film deposited at 900°C exhibited the highest hardness (H) and modulus of elasticity (E), measuring 21.95 and 208.3 GPa, respectively. Conversely, the film deposited at 1,000°C showed the lowest values, with H and E at 14.23a and 141.9 GPa, respectively. The H/E ratio of the coatings initially rose from 0.096 to 0.106 as the deposition temperature increased from 800°C to 900°C. However, for deposition temperatures exceeding 900°C the H/E ratio began to decline.

The effect of deposition rate and temperature on the structure and ferroelectric properties of pulsed laser deposited Bi0.95Dy0.05FeO3 thin films

In this study, the structural and ferroelectric properties of Bi0.95Dy0.05FeO3 (BDFO) thin films prepared using pulsed laser deposition (PLD) under various deposition rates (Dr) and substrate temperatures (Ts) are investigated. Regardless of Dr in the range of 1.0–3.0 Å/s, a predominant crystallographic orientation, BDFO(001), and similar microstructure are consistently identified for BDFO films at Ts = 500 °C. Stress analysis revealed the distinct stress states with Dr. Ferroelectric properties might depend on stress in this case. The compressive stress found for the film at Dr = 3.0 Å/s results in enhanced polarization, with a 2Pr of 180 μC/cm2. In contrast, tensile stress for the film at Dr = 1.0 Å/s exhibits a lower 2Pr = 106 μC/cm2. Besides, XRD results for the films at different Ts demonstrated that the optimal temperature for BDFO growth is Ts = 500 °C, which exhibits the lowest leakage current density due to the suppressed vacancies and improved crystallinity. These findings provide comprehensive insights into the structural and ferroelectric properties of BDFO films, elucidating the impact of deposition rate on their characteristics, and significantly improving ferroelectric properties of BDFO films for the applications.

The effect of deposition temperature on structural, morphological and dielectric properties of Yttria-doped zirconia thin films

The aim of this study was to investigate the effect of deposition temperature on the structural, optical, morphological and dielectric properties of yttria-stabilised zirconia (YSZ) films prepared by sol-gel spin-coating method. X-ray diffraction (XRD) measurements of YSZ films showed that the peaks of the cubic phase were prominent and the peak intensities increased with deposition temperature. The crystallite size, dislocation density and microstrain of the thin films were identified by XRD. It was observed that the crystal size of the YSZ thin films increased from 16 nm to 22 nm with the deposition temperature. The surface roughness of the thin films was found to have changed as revealed by Atomic Force Microscopy (AFM) measurements. The roughness increased from 7.72 nm to 11.92 nm with increasing temperature. The optical transmittance of the YSZ thin films was investigated in the wavelength range 200-900 nm and was found to increase slightly with increasing deposition temperature. Metal-Oxide-Semiconductor (MOS) devices were fabricated from these YSZ materials for dielectric characterization. The dielectric properties of the Ag/YSZ/n-Si MOS structure were investigated. It was found that the capacitance, conductivity and other dielectric parameters of these structures are strongly frequency dependent.

Influence of different temperatures and pH on structural, morphological, and electrochemical properties of Cu2O thin films by electrodeposition in acidic media

The present work describes the effect of deposition temperatures and pH values on structural, morphological, and electrochemical properties of cuprous oxide (Cu2O) thin films deposited on the conductive SnO2 glass substrates by using electrodeposition technique in an acidic system. The chronoamperometry curve of the solution was tested on an electrochemical workstation. X-ray diffraction patterns indicate that the deposited films have better crystallinity which is deposited at the deposition temperature of 50 °C and pH value of 5–6. Scanning electron microscopy displays that surface morphology of the deposited films varied greatly with the deposition temperature and pH value rising. The results of quantitative study of the target product films by Energy Dispersive Spectrometer (EDS) show that they are all in line with the element content ratio of Cu2O. By measuring the resistivity and conductivity of the deposited films, it was found to be in the semiconductor range.

Synergistic effect of deposition temperature and substrate bias on structural, mechanical, stability and adhesion of TiN thin film prepared by reactive HiPIMS

Titanium nitride (TiN) thin films continue to attract unprecedented attention due to their favourable mechanical, thermal, electrical and chemical properties. These properties depend, among others, on the morphology and the architecture of the thin film, which can be tuned with different configurations of the deposition parameters. This study presents an experimental investigation to tune the properties of TiN thin film deposited using reactive High-power impulse magnetron sputtering (HiPIMS) at different deposition temperatures (without heating (RT) and 400 °C) and substrate bias potentials (of floating, ground, −20 V, −40 V and −60 V). It is demonstrated that the morphological, structural, and mechanical properties of TiN can be tailored by controlling the deposition temperature and substrate potential bias to deposit dense thin films. A maximum hardness of 30 GPa was achieved for the thin film deposited at RT with a bias voltage of −60 V. The failure mechanism of the fracture toughness exhibited an isotropic behaviour at an applied load of 1 and 2 N respectively, for thin films deposited at RT. In contrast, an anisotropic behaviour was observed in the thin film deposited at a temperature of 400 0C.Overall, the thin film deposited at a temperature of 4000C showed an improved fracture toughness resistance (KIC) than the thin films deposited at RT. The use of bias potential was also observed to be beneficial for improving the KIC of the TiN thin films.

Preparation of a new B-CNTs/PSSF composite catalyst for catalytic wet peroxide oxidation of phenol in structured fixed bed

A new structured catalyst consisting of boron-doped carbon nanotubes growing directly on paper-like stainless steel fibers support (B-CNTs/PSSF) was developed for continuous catalytic wet peroxide oxidation (CWPO) of phenol in a structured fixed bed. Firstly, B-CNTs/PSSF was synthesized by chemical vapor deposition (CVD) with phenyboronic acid as a single precursor and CNTs/PSSF was prepared with camphor for comparison. Secondly, the effects of different deposition temperatures, deposition times, and phenylboronic acid dosages on the morphology and properties of B-CNTs were investigated, respectively. The results verified that under the conditions of deposition temperature of 750 °C, deposition time of 20 min, and phenylboronic acid dosage of 2 g, the B-CNTs/PSSF composite catalyst with uniform growth density, wavy and kinked morphology, abundant oxygen-containing functional groups and defect sites, and boron-doped content of 2.96% was successfully prepared. Then, the performance of B-CNTs/PSSF for continuous CWPO of phenol was evaluated. Catalytic results revealed that the B-CNTs/PSSF showed excellent catalytic activity in phenol degradation within 7 h (phenol conversion reached about 100% and total organic carbon (TOC) conversion was up to 68%). In contrast, the average phenol and TOC conversion of CNTs/PSSF were about 75% and 35%, respectively. It indicated that boron doping endowed CNTs with higher catalytic activity.

Effects of deposition temperature on microstructures and ablative properties of SiC coatings prepared by CVD from methylsilane

Using the methylsilane (MS) as a gas precursor, SiC coatings were prepared on the surface of graphite by the chemical vapor deposition (CVD) method at different deposition temperatures. The effects of temperature on the deposition rate, microstructures and ablative properties of SiC coatings were investigated systematically. The results showed that the SiC deposition rate of SiC coating using MS at 1000 °C was 50–120 μm/h, which was much higher than that using methyltrichlorosilane (5–10 μm/h). The SiC coatings deposited at lower temperatures (900–1000 °C) exhibited smooth and spherical compact packing morphology, while the SiC coatings deposited at higher temperatures (1100–1200 °C) appeared to possess an irregular cauliflower morphology with an significantly increased size of SiC particles. Therefore, the SiC coating prepared at deposition temperature of 1000 °C had suitable density, roughness, and uniform size of coating microstructure. Meanwhile, the mass ablation rate and linear ablation rate of the obtained SiC coating were respectively 0.0096 mg/s and 0.3750 μm/s after plasma ablation at 2300 °C for 80 s, exhibiting excellent ablative resistance. This study provided a theoretical and technical foundation for the preparation of SiC coating using the MS as the gas precursor by the CVD method.

Effects of Deposition Temperature and Working Pressure on the Thermal and Nanomechanical Performances of Stoichiometric Cu3N: An Adaptable Material for Photovoltaic Applications.

The pursuit of efficient, profitable, and ecofriendly materials has defined solar cell research from its inception to today. Some materials, such as copper nitride (Cu3N), show great promise for promoting sustainable solar technologies. This study employed reactive radio-frequency magnetron sputtering using a pure nitrogen environment to fabricate quality Cu3N thin films to evaluate how both temperature and gas working pressure affect their solar absorption capabilities. Several characterization techniques, including X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), Raman spectroscopy, scanning electron microscopy (SEM), nanoindentation, and photothermal deflection spectroscopy (PDS), were used to determine the main properties of the thin films. The results indicated that, at room temperature, it is possible to obtain a material that is close to stoichiometric Cu3N material (Cu/N ratio ≈ 3) with (100) preferred orientation, which was lost as the substrate temperature increases, demonstrating a clear influence of this parameter on the film structure attributed to nitrogen re-emission at higher temperatures. Raman microscopy confirmed the formation of Cu-N bonds within the 628-637 cm-1 range. In addition, the temperature and the working pressure significantly also influence the film hardness and the grain size, affecting the elastic modulus. Finally, the optical properties revealed suitable properties at lower temperatures, including bandgap values, refractive index, and Urbach energy. These findings underscore the potential of Cu3N thin films in solar energy due to their advantageous properties and resilience against defects. This research paves the way for future advancements in efficient and sustainable solar technologies.

Effects of deposition temperature on the mechanical and structural properties of amorphous Al–Si–O thin films prepared by radio frequency magnetron sputtering

Aluminosilicate (Al–Si–O) thin films containing up to 31 at.% Al and 23 at.% Si were prepared by reactive RF magnetron co-sputtering. Mechanical and structural properties were measured by indentation and specular reflectance infrared spectroscopy at varying Si sputtering target power and substrate temperature in the range 100 to 500 °C. It was found that an increased substrate temperature and Al/Si ratio give denser structure and consequently higher hardness (7.4 to 9.5 GPa) and higher reduced elastic modulus (85 to 93 GPa) while at the same time lower crack resistance (2.6 to 0.9 N). The intensity of the infrared Si-O-Si/Al asymmetric stretching vibrations shows a linear dependence with respect to Al concentration. The Al–O–Al vibrational band (at 1050 cm−1) shifts towards higher wavenumbers with increasing Al concentration which indicates a decrease of the bond length, evidencing denser structure and higher residual stress, which is supported by the increased hardness. The same Al–O–Al vibrational band (at 1050 cm−1) shifts towards lower wavenumber with increasing substrate temperature indicating an increase in the average coordination number of Al.

Reactively-sputtered super-hydrophilic ultra-thin titania films deposited at 120 °C

Abstract We investigate super-hydrophilic TiO2 (titania) films for concentrated solar-thermal power applications. Reactive magnetron sputtering has been used to deposit 8 to 12 nm thick titania thin films onto borosilicate microscope glass slides, low-Fe extra-clear architectural glass, or Si(100) wafers with a 500 nm thick thermal SiO2 layer. The effects of deposition temperature and O2 fraction of the O2/Ar working gas were investigated. We demonstrate the importance of the O2 fraction for obtaining optically transparent, super-hydrophilic (contact angle below 1°) thin films. In particular, we show that as the O2 fraction increases, contact angle decreases, obtaining super-hydrophilic titania thin films at deposition temperatures as low as 120 °C. Our work enables to develop low thermal budget cost-efficient industrial synthesis processes, paving the way for commercial applications.

Effect of deposition temperature and hydrogen as a process gas on mechanical properties and specific electrical resistivity of thick a-C:H obtained by means of PACVD

DLC coatings are widely used for their protective properties such as high wear resistance, low friction coefficient as well as chemical inertness. However, their electrical resistance is usually very high, which limits their utilization in electrotechnical applications. To improve electrical conductivity, DLC films are typically doped with nitrogen or metals. This study, however, investigates the mechanical and electrical properties of un-doped, hydrogenated DLC films deposited using temperatures above 450 °C. To further enhance the coating's properties, hydrogen gas was added during deposition.The DLC coatings were produced by means of PA-CVD using a pulsed DC discharge. Temperatures of 450 °C, 500 °C and 550 °C were used to deposit a-C:H films on steel substrate. The process gas consisted of a mixture of argon and acetylene. Additionally, coatings were deposited with hydrogen added to the gas mixture. A silicon-based interlayer served as an electrical insulator between substrate and coating and was deposited with HMDSO as a precursor. To measure the specific electrical resistivity of the films, the van der Pauw method was performed. The mechanical properties of the coatings were determined through nanoindentation. Raman spectroscopy was performed to analyze the structure of the DLC coatings.The films showed a significant decrease in specific electrical resistivity with increasing deposition temperature. Values dropped to <104 μΩ cm at 550 °C, attaining levels close to graphite. Hardness and Young's modulus increased up to 147 % with rising deposition temperature. The addition of 18 % hydrogen gas during deposition resulted in at least 60 % further reduction in specific electrical resistivity, while also slightly raising coating hardness for deposition temperatures above 450 °C. With this new distinct deposition method, electrically conductive a-C:H coatings with improved mechanical properties can be produced only by increasing the deposition temperature and the utilization of hydrogen as process gas.

The effect of deposition temperature of BN interphase on the tensile properties of SiC fibers

The chemical vapor infiltration (CVI) process was utilized to deposit controllable BN interphase on SiC fibers by using BCl3–NH3–H2 as precursors at low pressure from 900 °C to 1200 °C. Various characterization methods, such as SEM, Raman, XRD, XPS and TEM, are used to detect the microstructure and elemental composition of the interphases. The effects of deposition temperature on the morphology, deposition kinetics, elemental composition, and tensile properties of BN interphase coated fibers were investigated. The results indicated that the BN interphases deposited at the temperature from 900 °C to 1200 °C were compact and uniform. The growth rate increases first and then decreases with the increase of deposition temperature. The reaction rate reaches the maximum value at 1100 °C. High temperature deposition can improve the crystallinity of the BN interphase. Regardless of the deposition temperature, the tensile strength of the fiber decreases due to the increasing diameter after depositing the BN interphase. The deposition temperature had a significant impact on the tensile strength of fibers, especially at 1200 °C.

Impact of Deposition Temperature on Physical Properties of MgO-SiO2 Preparer Based on Natural Resources (Rocks)

This search displays the effects of deposition temperature on the physical properties of MgO-SiO2 thin films. These thin films were deposited on glass substrates using the autoclave method (within 120min) and at temperature deposition range of within a deposition temperature range of 150 °C–300 °C. These films were diagnosed using X-ray diffraction (XRD) and scanning electronic microscopy (SEM) and UV–Vis spectrophotometer for structural, morphological and optical analysis respectively. Using energy dispersive spectroscopy (EDX), the compositional characterization analysis of the MgO-SiO2 films was also carried out. The XRD patterns reveal that the MgO-SiO2 films have a cubic and hexagonal phase polycrystalline composition with the preferential growth direction of (0 0 2) and (0 1 1) respectively. Granular size was found to decrease by increasing the deposition temperature except at 200 °C, The crystal and optical parameters are calculated and discussed in detail. Membranes were found to have an absorption coefficient below (104 Cm−1) which means indirect permissible and forbidden electronic transitions. The SEM observations show that the films have homogeneous surfaces with clear fullness, The experimental results reveal that MgO-SiO2 thin films may be used as an alternative material for environmentally friendly buffer layer.

Preparation of silicon carbide and tantalum carbonitride composite with high hardness and moderate elastic modulus by laser chemical vapor deposition for anti-erosion protective coatings

Maintaining the harness of silicon carbide (SiC), while reducing Young's modulus of ceramic coatings is crucial for developing highly durable coating systems. This study demonstrated the growth of SiC and tantalum carbonitride (TaCN) composite films with high hardness and low modulus using laser-assisted chemical vapor deposition (CVD) with metal-organic precursors. The effects of deposition temperature on phases, chemical compositions, binding states, microstructures and mechanical properties were investigated. The film prepared at a deposition temperature of 1100 °C were grown at a deposition rate of 81.8 μm h−1, which comprised low-crystallinity SiC and TaCN grains smaller than 10 nm finely mixed and dispersed each other, forming a nanometric mosaic structure. The cross-sectional nanoindentation tests revealed a reduced Young's modulus (E*) of 238.2 GPa and a hardness (H) of 30.4 GPa, corresponding to H/E* and H3/E*2 values of 0.127 and 0.493 GPa, respectively. The SiC–TaCN nanocomposite film exhibited superior durability in erosion tests using a zirconia slurry at 20 kPa, compared with a monolithic SiC film and a silicon nitride substrate.

Effect of deposition temperature on topography and electrochemical water oxidation of NiO thin films

The deposition temperature plays a significant role in controlling the crystallinity, morphology, and texture of thin films. Herein, we report the fabrication of nickel oxide thin films on a fluorine-doped tin oxide-coated glass substrate via a single-step aerosol-assisted chemical vapor deposition technique. Variable temperatures from 450 to 525 °C were used for the fabrication of these NiO thin films. The crystalline structure of nickel oxide thin films was determined by X-ray diffraction which showed cubic structure having space group Fm3m, and unit cell lattice parameters of a = b = c = 4.17 Å that crystallize preferentially along (200) plane. While the Raman spectroscopic study revealed the presence of peaks corresponding to nickel oxide structure. The surface chemical composition and oxidation states were investigated by X-ray photoelectron spectroscopy. Moreover, field-emission scanning electron microscopy aided in examining the temperature-dependent topography and microstructure of films. It was observed that when deposition temperature is increased from 450 to 525 °C, the bandgap energy decreased from 3.59 to 3.41 eV. The electrocatalytic activity for the oxygen evolution reaction was performed under alkaline conditions, using linear sweep voltammetry and cyclic voltammetry at different scan rates. Moreover, ohmic drop and charge transfer resistance are estimated by electrochemical impedance spectroscopy. The nickel oxide deposited at 500 °C showed the highest current density and the earliest onset overpotential as compared with other samples at different temperatures. Morphology-dependent catalytic activity is attributed to substrate temperature which significantly affects the growth of nickel oxide. Cyclic voltammetry reveals the Ni redox feature due to the active phase of nickel (oxy)hydroxide (NiOOH) and there was no significant current until 1.5 VRHE. Measurements of activity as a function of substrate temperature were consistent with the hypothesis that different morphology of the electrode exerts different charge transfer activation on nickel oxide. These results suggested that electrocatalysts coupled with controlled morphology can be tuned in terms of high performance, commercial applicability, and water-splitting devices.

Vapor transport deposited Sb2(S,Se)3 thin film: Effect of deposition temperature and Sb2S3/Sb2Se3 mass ratio

The vapor transport deposition (VTD) processing is an effective and low-cost techniques to fabricate antimony selenosulfide (Sb2(S,Se)3) photovoltaic materials with large grains and preferred crystal orientations. Currently, the influences of various single deposition conditions of VTD on performances of Sb2(S,Se)3 solar cells have been studied, but which parameter should be optimized and how it affects is a noteworthy issue. Herein, the effects of two important deposition parameters, deposition temperature and mass ratio of Sb2S3/Sb2Se3 on the structure and photo-electrochemical properties of Sb2(S,Se)3 were investigated, and the mechanism of their impact on the growth of thin film was also discussed. It found that the (hk1) orientation growth of Sb2(S,Se)3 was dominated by Sb-Se bonds at deposition temperatures ranging from 460 °C to 500 °C. As the temperature increased, the S content in the film decreased. When the deposition temperature was fixed at 480 °C, it was found that the effect of the mass ratio of Sb2S3/Sb2Se3 on the growth was more about adjusting the concentration of Se than increasing the bonding of Sb-S. The introduced S can make the film smooth and dense, and also induce the growth of film in the (hk1) orientation when mass ratio is coupled with deposition temperature. Furthermore, the results of photo-electrochemical measurement indicated that photocurrent density is related to S content and preferred orientation. By adjusting the mass ratio, flat Sb2(S,Se)3 films were obtained with band gaps ranging from 1.24 eV to 1.42 eV and carrier concentrations ranging from 9.62 × 1014 cm−3 to 1.62 × 1015 cm−3, exhibiting good absorption layer characteristics.