Effect Of Deposition Pressure Research Articles

Preparation, wear resistance, and impact toughness of homoepitaxial diamond film deposited on polycrystalline diamond compact by HFCVD method

To minimize the detrimental effects of cobalt binder on the thermal stability of polycrystalline diamond compact (PDC) under high temperature working conditions and enhance the PDC’s properties. Hot filament chemical vapor deposition diamond coated polycrystalline diamond compact (HFCVD-PDC) was prepared by depositing homogeneous epitaxial diamond film on the polycrystalline diamond layer (PCD layer) treated with cobalt binder removal. The effect of deposition pressure on the microstructure of the diamond film was investigated, and the PDC’s wear resistance was assessed using the abrasion ratio test. The drop hammer impact test was utilized to evaluate the impact toughness of the original PDC, cobalt removal PDC, and HFCVD-PDC. The results showed that a continuous and dense nanodiamond film with a cauliflower-like structure was formed on the PDC surface at the deposition pressure of 3 kPa. The abrasion ratio of the HFCVD-PDC increased by 67.44% compared to the original PDC, and by 33.29% compared to the cobalt removal PDC. Furthermore, filling nanodiamonds into the pores of cobalt removal PDC improved its impact toughness. These findings suggest that the application of homogeneous epitaxial diamond on the PCD layer can significantly improve the PDC’s wear resistance and impact toughness.

Influence of deposition pressure on microstructure, mechanical and electrical properties of niobium thin films

Niobium (Nb) thin films were deposited on a Si substrate using magnetron sputtering system by varying the deposition pressure. The effect of deposition pressure on the microstructure, residual stresses, and electrical properties was investigated by systematically varying the deposition pressure from 0.15 to 0.60 Pa. The Nb thin films were characterized using hard x-ray reflectivity, grazing incidence x-ray diffraction, four point probe method, and atomic force microscopy. The films grown at lower deposition pressures had smooth surfaces and more compact structures, which are advantageous for lowering electrical resistance but had higher compressive stress. On the other hand, the films grown at higher deposition pressures had columnar type growth with less dense structures, which leads to increase in electrical resistance. However the nature of stresses transform from compressive to tensile. Hard X-ray reflectivity performed on Nb films provides direct insight into the growth and the microstructure which were correlated with the mechanical and electrical properties.

Effect of deposition pressure on friction and wear properties of BWS2 composite coatings

This study investigated the impact of deposition pressure on the microstructure and tribological properties of B/WS2 composite coatings deposited via unbalanced magnetron sputtering. Deposition pressures of 0.6 Pa, 0.8 Pa, 1.0 Pa, 1.2 Pa, and 1.4 Pa were used during the deposition process. The microstructure and mechanical properties of the B/WS2 composite coatings were characterized, and friction and wear experiments were conducted. The study found that the microhardness of the B/WS2 composite coatings decreased as the deposition pressure increased. The highest hardness of the coating, reaching 8.1GPa, was observed at a deposition pressure of 0.6 Pa. This was due to the formation of Tungsten tetraborate (WB4) during the deposition process, which had a high hardness and improved the mechanical properties of the coating. The wear life of the B/WS2 composite coatings was at its best, reaching 9.9 × 104 cycles, and the friction coefficient was at its lowest when the deposition pressure was 1.2 Pa. Selecting an appropriate deposition pressure can improve the tribological properties of B/WS2 composite coatings. Doping Boron can improve the hardness and wear resistance of the composite coatings. Abrasive wear and spalling are the two main wear forms of B/WS2 composite coatings.

Influence of deposition pressure on the microstructure and mechanical properties of sputter-deposited MoNbTaW refractory multi-principal element alloy thin films

A systematic investigation into the effects of deposition pressure on the microstructure and mechanical properties of MoNbTaW refractory multi-principal element alloy (RMPEA) films deposited on Silicon (100) substrates using direct current magnetron sputtering (DCMS) is presented. The deposition pressure was varied from 3 Pa to 0.3 Pa at a homologous temperature (T/Tm) ≤ 0.1. The crystal structure, surface morphology, cross-sectional microstructure and mechanical properties were studied using X-ray diffraction, scanning and transmission electron microscopy and nanoindentation. X-ray diffraction findings indicate a single-phase BCC structure throughout the pressure range. An evolution in surface morphology was observed, coupled with a transition from a void-rich to a densified microstructure as the deposition pressure decreased, in line with the structure zone model. Additionally, variations in crystallographic orientations were detected, with changes in I(110)/(211) suggesting an interplay between film growth dynamics and crystallographic orientation shifts with the deposition pressure. The mechanical properties have shown significant improvement, with hardness and modulus values increasing from 7GPa to 12 GPa and 135 GPa to 243 GPa, with a decrease in deposition pressure. The study provides insights into the deposition mechanism, highlighting that microstructural changes and variations in crystallographic orientations are influenced by deposition pressure-induced alterations in adatom energy and surface mobility, thus affecting the films' mechanical properties.

Comprehensive investigation of sputtering deposition pressure effects on a-InGaZnO Schottky diodes

The effects of Ar sputtering deposition pressure on the optical, structural, morphological, and electrical properties of amorphous InGaZnO thin films were investigated. The InGaZnO thin films, which have amorphous structures determined by grazing incidence x-ray diffraction, contained In, Ga, Zn, and O confirmed by secondary ion mass spectrometry method. Additionally, when the thicknesses of the deposited thin films are examined, it was seen that the profilometer measurement results of the crater formed by secondary ion mass spectrometer and scanning electron microscope measurement results are nearly similar, and it is approximately 100 nm. The surface roughness, obtained from Atomic Force Microscopy results, show that decreased up to a particular value with the increase of the working pressure, and then the surface roughness increased. The optical band gaps of the films were obtained in the range of 3.50 eV−3.58 eV via Tauc relation by using the Ultraviolet-Visible measurements carried out in the wavelength range of 200 nm−1100 nm. It was seen that the optical band gap was decreased with the increase in Ar pressure. The electrical properties of InGaZnO thin film-based Schottky diodes, such as the barrier height, ideality factor, saturation current, series resistance, and shunt resistance, have also been studied comprehensively. The electrical results showed that diode properties change with increasing deposition pressure.

Effects of Deposition Pressure on the Microstructural and Tribological Properties of CrAgCeN Coatings Prepared by Magnetron Sputtering.

This study investigates the effect of deposition pressure on the microstructure and tribological properties of CrAgCeN coatings synthesized via unbalanced magnetron sputtering. The CrAgCeN coatings presented a face-centered cubic structure. As the deposition pressure increased, the surface grain topography of the CrAgCeN coatings transformed from a looser pyramidal structure to a denser structure, while their hardness H and elastic modulus E first increased and then decreased. The strengthening effect was mainly attributable to Ag and Ce elements. Conversely, the coefficient of friction (COF) and wear rates of the coatings reduced and then increased. Under 0.6-Pa deposition pressure, the COF and wear rate of the CrAgCeN coating were minimized (0.391 and 3.2 × 10-7 mm3/(N·m), respectively) while the H and E were maximized (14.2 and 206.2 GPa, respectively). The values of hardness, wear resistance, resistance of elastic strain to failure (H/E) and resistance to plastic deformation (H3/E2) were improved for the coatings by Ce. The wear mechanisms were adhesion and delamination. The wear mechanisms were adhesion and delamination. Selecting the appropriate deposition pressure can improve the tribological properties of the CrAgCeN coatings. The received results of research in this study allow us to establish a rational coating composition for deposition on tools providing an increase in machining efficiency of the materials used in engineering. CrAgCeN coating with excellent properties may be applied to steel substrate through the combined action of corrosion, high temperature and mechanics.

Nanostructured ZnxMn3‒xO4 thin films by pulsed laser deposition: A spectroscopic and electrochemical study towards the application in aqueous Zn-ion batteries

Aqueous Zn-ion batteries (AZIBs) represent a safe and sustainable technology amongst the post-lithium systems, though the poor understanding of the material behaviour at the cathode prevents the full development of efficient AZIBs. ZnMn2O4 (ZMO) has been considered one of the cathode candidates owing to its analogy to the well-established LiMn2O4 cathode for lithium-ion batteries, however its electrochemical mechanism in the presence of Zn ions in aqueous environment is unclear and still debated. In this work, we synthesised nanostructured ZMO thin films by Pulsed Laser Deposition (PLD) and we evaluated, through extensive characterization by microscopic, spectroscopic, and diffraction techniques, how the deposition and annealing conditions affect the film properties. The self-supported nature and the high degree of control down to the nanoscale make a thin film an ideal model system to study the electrochemistry of the material in aqueous solution and to emphasize the impact of the film properties on its electrochemical response. We highlighted the crucial role of the oxygen pressure in the modulation of the film porosity and the combined effect of deposition pressure and annealing temperature to produce a film with tailored properties in terms of morphology, crystallinity, and Zn stoichiometry. A complex redox mechanism involving multiple concurrent reactions and the formation of zinc hydroxide sulphate hydrate (ZHS) was reported, as well as the influence of the film porosity on the voltammetric behaviour of the film at higher scan rate. Our results confirm the intricate electrochemical mechanism of the ZMO material, which does not merely involve the Zn2+ insertion/extraction but also the crucial participation of Mn2+ from the electrolyte, and pave the way for the nanoscale design of engineered ZMO-based electrodes.

Effect of deposition pressure and annealing temperature on the microstructure and oxidation resistance of FeNbMoTaW films

Effect of deposition pressure and annealing temperature on the microstructure and oxidation resistance of FeNbMoTaW films

Magnetic properties in soft (CoFeB)/hard (Co) bilayers deposited under different Ar gas pressure

We have studied the effect of deposition pressure on the magnetization reversal, domains, anisotropy and Gilbert damping constant in the ferromagnetic (CoFeB and Co) single and bilayer samples. Hysteresis measured by magneto-optic Kerr microscopy for the single layer films prepared at higher deposition pressure indicate no change of loop shape i.e. isotropic behaviour. An enhancement of anisotropy has been observed in the bilayer samples than the single layer samples prepared at a particular deposition condition. However, increasing the deposition pressure to 50 sccm for the bilayer samples, anisotropy gets reduced. For single layer Co film deposited at 10 sccm exhibits branch and patch like domains for different angle between the easy axis and the external magnetic field. However, the Co film deposited at 50 sccm exhibits ripple like domains. In the case of single layer CoFeB, branch and patch like domains are observed deposited at 10 sccm. Patch like domains are found for the CoFeB films deposited at 50 sccm. Pinned labyrinth and ripple kind of magnetic domains along with the big branch domains are found in the bilayer samples. The pinned domains may be due to the interfacial exchange coupling. Similar values of damping constants have been observed for different thin films prepared at different deposition pressure.

Effect of Different Deposition Pressure on Diamond Films Deposited by Hot Filament Chemical Vapor Deposition.

A hot filament chemical vapor deposition (HFCVD) method was adopted to deposit diamond films at deposition pressures ranging from 2-6 kPa. The effects of deposition pressure on the deposition rate, phase structure, and microstructure of diamond films were investigated. The surface morphology, grain size, micro-structure, and growth rate of the diamond films were analyzed using scanning electron microscopy, X-ray diffraction (XRD), and Raman spectrometry. The experimental results showed that granules on the surface exhibited increasingly compact structure with increasing deposition pressure. The diamond films deposited at various pressures have good compactness, and the particles on the film surfaces are arranged in an ordered manner. All films exhibited orientation along the (111) plane, which was the significant characteristic XRD peak of each diamond film. The (111) peak intensity was the strongest for the film prepared at 2 kPa deposition pressure. Overall, the deposition rate and grain size decreased with increasing deposition pressure, provided other deposition conditions remained unchanged. However, the densification of the microstructure and the nucleation density increased with increasing deposition pressure. Secondary nucleation became more pronounced as deposition pressure increased, and grain size decreased as nucleation density increased.

Role of Deposition Pressure on Properties of Phosphorus Doped Hydrogenated Nano-Crystalline Silicon (nc-Si:H) Thin Films Prepared by the Cat-CVD Method

Objective: Phosphorus doped hydrogenated nano-crystalline silicon (nc-Si:H) thin films were synthesized by catalytic chemical vapor deposition (Cat-CVD) method. Methods: The effect of deposition pressure on opto-electronic and structural properties was studied using various analysis techniques such as low angle XRD analysis, FTIR spectroscopy, Raman spectroscopy, UV-Visible spectroscopy, dark conductivity, etc. Results: From low angle XRD and Raman spectroscopy analysis, it is observed that an increase in deposition pressure causes Si:H films to transform and transit from amorphous to the crystalline phase. At optimized deposition pressure (300 mTorr), phosphorous doped nc- Si:H films having a crystallite size of ∼29 nm and crystalline volume fraction of ∼58% along with high deposition rate (∼29.7 Å/s) have been obtained. The band gap was found to be ∼1.98 eV and hydrogen content was as low as (∼1.72 at. %) for these films. Conclusion: The deposited films can be useful as an n-type layer for Si:H based p-i-n, tandem and c-Si hetero-junction solar cells.

Retraction Note to: The effect of deposition pressure on the material properties of pulsed laser deposited BaAl2O4:Eu2+, Dy3+ thin films

BaAl2O4:Eu2+, Dy3+ thin films have been successfully deposited by pulsed laser deposition (PLD) method. Formation of crystalline phase was confirmed by X-ray diffraction (XRD) measurement. The average crystallite size calculates using the Scherer’s formula was found to be between 15.2 and 30.5 nm. Scanning electron microscopy (SEM) micrograph revealed that, the films have non uniform morphology with variable grain size for all the deposition conditions. The surface morphology displays some tendency for agglomeration as a function of increasing deposition pressure, which may be due to the sintering or coalesce of small particles into clusters. Atomic force microscopy (AFM) measurements also show an increase in surface roughness as the oxygen deposition pressure is increased. The BaAl2O4:Eu2+, Dy3+ thin-film phosphors exhibit photoluminescence (PL) emission at 495 nm upon 254 nm excitation. This can be attributed to the electronic transition of Eu2+ ions from 4f65d1 to 4f. The present study recommends that this phosphor could be used as luminescent materials for light emitting diode applications.

Gallium oxide films deposition by RF magnetron sputtering; a detailed analysis on the effects of deposition pressure and sputtering power and annealing

In this study, gallium oxide (Ga2O3) thin films were deposited on sapphire and n-Si substrates using Ga2O3 target by radio frequency magnetron sputtering (RFMS) at substrate temperature of 300 °C at variable RF power and deposition pressure. The effects of deposition pressure and growth power on crystalline structure, morphology, transmittance, refractive index and band gap energy were investigated in detail. X-ray diffraction results showed that amorphous phase was observed in all the as-deposited thin films except for the thin films grown at low growth pressure. All the films showed conversion to poly-crystal β-Ga2O3 phase after annealing process. When the deposition pressure increased from 7.5 mTorr to 12.20 mTorr, change in the 2D growth mode to 3D columnar growth mode was observed from the SEM images. Annealing clearly showed formation of larger grains for all the thin films. Lower transmission values were observed as the growth pressure increases. Annealing caused to obtain similar transmittance values for the thin films grown at different pressures. It was found that a red shift observed in the absorption edges and the energy band gap values decrease with increasing growth pressure. For as-deposited and annealing films, increasing sputtering power resulted in the increase refractive index.

Correction to: RETRACTED ARTICLE: The effect of deposition pressure on the material properties of pulsed laser deposited BaAl2O4:Eu2+, Dy3+ thin films

Correction to: RETRACTED ARTICLE: The effect of deposition pressure on the material properties of pulsed laser deposited BaAl2O4:Eu2+, Dy3+ thin films

Effect of Deposition Pressure on the Microstructure and Corrosion Resistance of Diamond-Like Carbon Films Prepared by Plasma Enhanced Chemical Vapor Deposition

Effect of Deposition Pressure on the Microstructure and Corrosion Resistance of Diamond-Like Carbon Films Prepared by Plasma Enhanced Chemical Vapor Deposition

Effect of Deposition Pressure on the Microstructure and Optical Band Gap of Molybdenum Disulfide Films Prepared by Magnetron Sputtering

MoS2 films were prepared via magnetron sputtering under different deposition pressures, and the effects of deposition pressure on the crystal structure, surface morphology, and optical properties of the resulting films were investigated. The results show that the crystallinity of the films first increases and then decreases with increasing pressure. The surface of the films prepared by magnetron sputtering is dense and uniform with few defects. The deposition pressure affects the grain size, surface morphology, and optical band gap of the films. The films deposited at a deposition pressure of 1 Pa revealed remarkable crystallinity, a 30.35 nm grain size, and a 1.67 eV optical band gap. Given the large electronegativity difference between MoS2 molecules and weak van der Waals forces between layers, the MoS2 films are prone to defects at different deposition pressures, causing the exciton energy near defects to decrease and the modulation of the surrounding band.

Impact of plasma dynamics on magneto optic kerr effect (MOKE) in Mn doped BFO thin films

The present work explores the effect of deposition pressure on the magnetic field dependent optical properties of Mn doped BFO (BFMO) thin films utilizing the Surface Plasmon Resonance (SPR) tool. SPR technique is a highly sensitive tool appropriate for surface investigations. Pulsed laser deposition (PLD) technique was utilized for the growth of BFMO thin films by varying the deposition pressures on gold (Au) coated prisms for SPR measurements. Transverse Magneto-Optic Kerr Effect (TMOKE) configuration combined with SPR technique is effectively utilized to investigate the magneto-optic coupling in Mn doped BFO thin films for incident wavelength of 633 nm.

RETRACTED ARTICLE: The effect of deposition pressure on the material properties of pulsed laser deposited BaAl2O4:Eu2+, Dy3+ thin films

BaAl2O4:Eu2+, Dy3+ thin films have been successfully deposited by pulsed laser deposition (PLD) method. Formation of crystalline phase was confirmed by X-ray diffraction (XRD) measurement. The average crystallite size calculates using the Scherer’s formula was found to be between 15.2 and 30.5 nm. Scanning electron microscopy (SEM) micrograph revealed that, the films have non uniform morphology with variable grain size for all the deposition conditions. The surface morphology displays some tendency for agglomeration as a function of increasing deposition pressure, which may be due to the sintering or coalesce of small particles into clusters. Atomic force microscopy (AFM) measurements also show an increase in surface roughness as the oxygen deposition pressure is increased. The BaAl2O4:Eu2+, Dy3+ thin-film phosphors exhibit photoluminescence (PL) emission at 495 nm upon 254 nm excitation. This can be attributed to the electronic transition of Eu2+ ions from 4f65d1 to 4f. The present study recommends that this phosphor could be used as luminescent materials for light emitting diode applications.

Demonstration of SiO2/SiC based protective coating for dental ceramic prostheses.

SiO2/SiC coatings were deposited onto ceramics disks using plasma enhanced chemical vapor deposition. The effects of deposition pressure and gas-flow ratio on the refractive index, extinction coefficient, and SiC composition were studied. For the highest studied SiH4 to CH4 gas-flow ratio of 1.5, the refractive index increased by 17% from 2.53 (at the wavelength of 845 nm) to 2.96 (at the wavelength of 400 nm). For the lowest studied SiH4 to CH4 gas-flow ratio of 0.5, the refractive index only increased by 4% from 2.11 (at the wavelength of 845 nm) to 2.20 (at the wavelength of 400 nm). At higher deposition pressures, the variation in refractive index of the SiC coatings was significantly lower showing a slight increase from 1.93 (at a wavelength of 845 nm) to 1.96 at a wavelength of 400 nm. Except for the case of a low SiH4 to CH4 gas-flow ratio of 0.5, for light with wavelengths ≤ 650 nm, the extinction coefficient of the SiC coatings increased significantly. Light with a wavelength > 650 nm had an extinction coefficient near 0 in all cases. After annealing the sample at 400°C for 4 hours, hydrogen-related bonds broke and the stress of the film was reduced from -245 to -71 MPa. By utilizing different thicknesses of SiC, the full standard dental shade guide was matched with the ΔE of each coated disk being less than 3.3 compared to the shade guide.

Effect of deposition pressure on the properties of magnetron sputtering-deposited Sb2Se3 thin-film solar cells

Antimony selenide (Sb2Se3) thin films were deposited by RF magnetron sputtering using a stoichiometric binary target onto the FTO glass substrates with various working pressures ranging from 0.3 to 10 Pa at room temperature and annealed at 300 °C in inert atmosphere. It was observed that the morphologies and microstructure were strongly affected by the working pressure. The Sb2Se3 thin films had [hk0] orientation preference at 0.3 Pa and 2 Pa, while the films were found to be easier to grow inclined to [hk1] direction at 5 Pa, 8 Pa, and 10 Pa in this work. As expected, the samples deposited at higher pressures exhibited better conductivity and the highest photocurrent reached about 580 μA when illuminated by a white LED with a power density of 5 mW cm−2. The Se losses were observed both during the sputtering and annealing processes. The solar cells were fabricated with a superstrate structure and the defects in the sputtered Sb2Se3 absorbers were analyzed.