Effective Lifetime Research Articles

Effective Rapid Fluorescence Lifetime Imaging of the Brain: A Novel Approach Using Upconversion Photoluminescence Lifetime Based on Gate-Width Acquisition.

The rapid lifetime imaging of upconversion photoluminescence is becoming increasingly popular in biosensing, anticounterfeiting, optical thermometry, and multiplex imaging. However, existing Rapid Lifetime Determination (RLD) techniques are limited in their ability to integrate contiguous, overlapping, and discrete windows into a single measurement, hindering accurate fluorescence lifetime retrieval. This study introduces a new data acquisition method using three adjustable gates in a single measurement to enhance resolution. We apply this method in rapid upconversion fluorescence lifetime imaging to visualize capillary networks and map pH levels based on intensity and lifetime differences in mouse brain vasculature. By enhancing brightness using NaYbF4@NaYF4,Er,Tm@NaYF4 nanoparticles, we achieve effective brain imaging. Monte Carlo simulations demonstrate a relative standard deviation of less than 0.4% for fluorescence durations spanning from 1 to 20 ns. This method provides a fast, high-contrast solution for multiplex brain imaging, addressing the limitations of slow data collection and poor accuracy in existing RLD techniques.

Measurement of the $$ {\textrm{B}}_{\textrm{s}}^0\to \textrm{J}/{\uppsi \textrm{K}}_{\textrm{S}}^0 $$ effective lifetime from proton-proton collisions at $$ \sqrt{s} $$ = 13 TeV

Abstract The effective lifetime of the $$ {\textrm{B}}_{\textrm{s}}^0 $$ B s 0 meson in the decay $$ {\textrm{B}}_{\textrm{s}}^0\to \textrm{J}/{\uppsi \textrm{K}}_{\textrm{S}}^0 $$ B s 0 → J / ψK S 0 is measured using data collected during 2016–2018 with the CMS detector in $$ \sqrt{s} $$ s = 13 TeV proton-proton collisions at the LHC, corresponding to an integrated luminosity of 140 fb−1. The effective lifetime is determined by performing a two-dimensional unbinned maximum likelihood fit to the $$ {\textrm{B}}_{\textrm{s}}^0 $$ B s 0 meson invariant mass and proper decay time distributions. The resulting value of 1.59 ± 0.07(stat) ± 0.03(syst) ps is the most precise measurement to date and is in good agreement with the expected value.

Simple Smoothing of the Bottom Silicon Surface Using Wet Chemical Etching Methods for Epitaxial III‐V/Silicon Tandem Manufacturing

The implementation of diverse technologies has recently facilitated the production of cost‐effective and highly efficient solar cells. High‐efficiency solar cells with III‐V compounds tandem crystalline silicon cells have achieved photovoltaic efficiency of higher than 39%. Etching silicon wafers plays a vital role in the deposition of epitaxial layers, neutralizing dangling bonds, and surface passivation for tandem solar cells. The wafers are polished using a solution of HF–HNO3–CH3COOH (HNA) and 20% KOH to smoothen the wafer surface. When HNA wet etching is performed for 3.5 min and the 20% KOH etching lasts for 6 min, the microroughness of the wafer is 1.9 nm with a measurement area of 10 × 10 μm2 and 0.816 nm within an area of 1 × 1 μm2. Compared with the as‐cut wafer, the reflectance increases from 31.7% to 34.7%, and the effective minority carrier lifetime, with 30 nm Al2O3 passivation after 450 °C activated, increases from 1.4 to 1.8 ms in a carrier density of 1.0 × 1015 cm−3.

Interface properties study of black silicon solar cells with front surface a-Si:H/c-Si heterojunction

Abstract The exceptionally low reflectance of black silicon across a broad wavelength range makes it an intriguing surface texture for solar cell applications. Silicon heterojunction (SHJ) solar cells fabricated on black silicon (Si) formed by dry reactive ion etching (RIE) using inductive coupled plasma (ICP) on n-type Si are explored. The study is focused on the properties of the a-Si:H/c-Si interface, being a key issue for the photovoltaic performance of SHJ. Deep-level transient spectroscopy (DLTS) detected no radiation defect in Si after the etching. The surface of black Si was passivated with an intrinsic a-Si:H layer, followed by the deposition of p-type and n-type a-Si:H on the front and back sides, respectively. The SHJ solar cell photovoltaic performance based on black Si is strongly influenced by defect density at the a-Si:H/Si interface. Admittance spectroscopy and effective charge carrier lifetime measurements demonstrate that interface defect density decreases with the increase of (i)a-Si:H thickness. The value of 0.75 ms effective charge carrier lifetime was reached for single (i) a-Si:H layer passivation and 0.25 ms when (p)a-Si:H was deposited over the intrinsic a-Si:H layer. The measured open circuit voltage (VOC) values for the SHJ solar cells increase with the (i)a-Si:H layer thickness reaching 658 mV. However, the fill factor decreases with increasing (i) a-Si:H layer thickness, limiting the efficiency at the maximum value below 14% due to the thickness uniformity of the a-Si:H layer. The development of conformal growth of a-Si:H is a key issue for further improvement of black Si heterojunction solar cell photovoltaic performance. 

Effect of Ga Variation on the Bulk and Grain‐Boundary Properties of Cu(In,Ga)Se2 Absorbers in Thin‐Film Solar Cells and Their Impacts on Open‐Circuit Voltage Losses

ABSTRACTPolycrystalline widegap Cu(In,Ga)Se2 (CIGSe) absorbers for top cells in photovoltaic tandem devices can be synthesized via [Ga]/([Ga] + [In]) (GGI) ratios of > 0.5. However, the power conversion efficiencies of such high‐GGI devices are smaller than those of the record cells with GGI < 0.5. In the present work, the effects of the GGI ratio on various CIGSe material properties were studied and correlated with the radiative and nonradiative open‐circuit voltage (VOC) deficits of the thin‐film solar cells. Average grain sizes, grain boundary (GB) recombination velocities, fluctuations in luminescence energy distribution, barrier heights at GBs, effective electron lifetimes, and Urbach energies were investigated in five solar cells with GGI ratios from 0.13 to 0.83. It was found that the GGI variation affects GB recombination velocities, fluctuations in spatial luminescence distributions, the average grain size, the electron lifetime, and the Urbach energy. In contrast, the detected ranges of barrier heights at GBs are independent of the GGI ratio. Mainly Ga/In gradients give rise to substantial radiative VOC losses in all solar cells. Nonradiative VOC deficits are dominant especially for solar cells with GGI > 0.5, which can be attributed to low bulk lifetimes and enhanced recombination at GBs in CIGSe absorbers in this compositional range.

Radiological Risk Assessment of Building Materials Used in Federal College of Education (Technical) Akoka, Lagos State, Nigeria

Multiple building constructions necessitating a regular influx of different soils for building purposes within Federal College of Education (Technical) Akoka, in Lagos State, Nigeria spurred a radiological risk assessment of selected soil samples. Five (5) construction points were identified and ten (10) soil samples were collected. A gamma spectrometer was used to evaluate the natural radionuclides (226Ra, 232Th, and 40K) present in the soils. IAEA-certified standard materials of RGU-1, RGTh-1, and RGK-1 were used to determine the full peak efficiencies of gamma energies 609, 1120, and 1764 keV for 238U, 2614 keV for 232Th and 1460 keV for 40K. Activity concentration, absorbed dose, annual effective dose equivalent, hazard indices, and excess lifetime cancer risk (ELCR) were estimated to assess possible radiological risks in the building soil samples. Results from the analysis revealed the highest radioactivity among soil samples was 674.3 Bq/kg from 40K and the lowest was 18.5 Bq/kg from 226Ra. The absorbed dose (D) varies from 65.8 nGy/h to 215.3 nGy/h with an average value of 136.6 nGy/h, and the annual effective dose equivalent ranged from 0.081 mSv/y to 0.264 mSv/y with an average value 0.168 mSv/y. The internal and external hazard index ranged from 0.49 −1.46 and 0.39 − 1.32 respectively which is not completely below the hazard index threshold value ≤ 1 as recommended by UNSCEAR. The ELCR values ranging from 0.222 × 10-3 − 0.726 × 10-3 with an average value of 0.461 × 10-3 predicted an insignificant carcinogenic risk with the probability of four persons in every 10,000 persons.

Assessment of tracheobronchial and lung dose due to radon and thoron inhalation.

The main sources of natural background radiation are radon, thoron and their progeny, which may cause health risks to humans. Keeping in mind the importance of the subject, three samples each from 10 selected residential areas, including the centre of Babylon Governorate, Iraq, and its districts, were collected. Concentration of radon and thoron was measured using solid-state track detectors (CR-39). The arithmetic means of the concentration of radon and thoron were 47.367±19.56 and 133.246±16.585 Bqm-3, respectively; these values are considered safe when compared with the upper reference level of 200-600 Bqm-3 recommended by the International Commission for Radiological Protection (ICRP). The value of the inhalation equivalent dose from radon gas discovered in these areas with rate 37.893 nSv is less than the value of the global average of 1.15 mSv. This indicates that the risks related to inhalation of radon are low as the lung dose rate (DLung), tracheobronchial region (DT-B), annual effective dose (AED) and excess lifetime cancer risk (ELCR) is (1.894 nGyh-1, 22.736 nSv, 0.236 mSvy-1 and 0.835 x10-3), respectively. While the value of the inhalation equivalent dose (IED) from thoron as effective dose to lung DLung, AED and ELCR are equal to (0.133 nSv, 0.167 mSvy-1 and 0.587 x 10-3), respectively. To conclude, the rates in the study area are less than the ICRP recommended level of 3 mSv; therefore, the studied areas are safe from the health risks of inhalation of radon and thoron.

On the Use of a Chloride or Fluoride Salt Fuel System in Advanced Molten Salt Reactors, Part 3; Radiation Damage

Structural materials in fast reactors with harsh radiation environments due to high energy neutrons—compared to thermal reactors—potentially suffer from a higher degree of radiation damage. This radiation damage can change the thermophysical and mechanical properties of materials and, as a result, alter their performance and effective lifetime, in some cases leading to their disintegration. These phenomena can jeopardize the safety of fast reactors and thus need to be investigated. In this study, the effect of radiation damage on the vessels of molten salt fast reactors (MSFR) was evaluated based on two fundamental radiation damage parameters: displacement per atom (dpa) and primary knock-on atom (pka). Following the previous part of this article (Parts 1 and 2), an iMAGINE reactor core design (University of Liverpool, UK—chloride-based salt fuel system) and an EVOL reactor core design (CNRS, Grenoble, France, fluoride-based salt fuel system) with stainless steel and nickel-based alloy material vessels, respectively, were considered as case studies. The SPECTER and SPECTRA-PKA codes and a PTRAC card of MCNPX, integrated with a module which has been developed in MATLAB, named PTRIM and SRIM-2013 (using binary collision approximation), were employed individually to calculate and compare dpa and PKA (this master module containing all three tools has been appended to the iMAGINE-3BIC package for future use during reactor operations). Additionally, SRIM-2013 was applied in a 3D simulation of a radiation damage map on a small sample of vessels based on the calculated PKA. Our results showed a higher degree of radiation damage in the iMAGINE vessel compared to the EVOL one, which could be expected due to the harder neutron flux spectrum of the iMAGINE core compared to EVOL. In addition, the nickel alloy vessel showed better radiation damage resistance against high energy neutrons compared to the stainless steel one, although more investigations are required on thermal neutrons and alloy corrosion mechanisms to determine the best material for use in MSFR vessels.

Role of Ag Addition on the Microscopic Material Properties of (Ag,Cu)(In,Ga)Se2 Absorbers and Their Effects on Losses in the Open‐Circuit Voltage of Corresponding Devices

ABSTRACTAg alloying of Cu(In,Ga)Se2 (CIGSe) absorbers in thin‐film solar cells leads to improved crystallization of these absorber layers at lower substrate temperatures than for Ag‐free CIGSe thin films as well as to enhanced cation interdiffusion, resulting in reduced Ga/In gradients. However, the role of Ag in the microscopic structure–property relationships in the (Ag,Cu)(In,Ga)Se2 thin‐film solar cells as well as a correlation between the various microscopic properties of the polycrystalline ACIGSe absorber and open‐circuit voltage of the corresponding solar cell device has not been reported earlier. In the present work, we study the effect of Ag addition by analyzing the differences in the various bulk, grain‐boundary, optoelectronic, emission, and absorption‐edge properties of ACIGSe absorbers with that of a reference CIGSe absorber. By comparing thin‐film solar cells with similar band‐gap energies ranging from about 1.1 to about 1.2 eV, we were able to correlate the differences in their absorber material properties with the differences in the device performance of the corresponding solar cells. Various microscopic origins of open‐circuit voltage losses were identified, such as strong Ga/In gradients and local compositional variations within individual grains of ACIGSe layers, which are linked to absorption‐edge broadening, lateral fluctuations in luminescence‐energy distribution, and band tailing, thus contributing to radiative VOC losses. A correlation established between the effective electron lifetime, average grain size, and lifetime at the grain boundaries indicates that enhanced nonradiative recombination at grain boundaries is a major contributor to the overall VOC deficit in ACIGSe solar cells. Although the alloying with Ag has been effective in increasing the grain size and the effective electron lifetime, still, the Ga/In gradients and the grain‐boundary recombination in the ACIGSe absorbers must be reduced further to improve the solar‐cell performance.

Effectiveness of Lifetime Fitness Course Activities in Improving Movement Efficiency

University physical education courses are meant to teach the fundamentals of various sports and exercise techniques. The main purpose of this study was to determine how effective lifetime fitness (LF) courses in higher education can enhance movement efficiency (ME). Eleven participants performed the Fusionetics movement efficiency test at the beginning, middle, and end of the academic semester. Overall ME scores showed a significant effect, whereby the scores increased from the pre- to the mid-test but fell from the mid- to the post-test. Both the 1- and 2-leg squat subtests revealed a similar pattern. The second half of the semester's increased use of endurance-based class activities may have caused the ME score to decline.

Long-term carrier lifetime instabilities in n-type FZ- and Cz-silicon under illumination at elevated temperature

Even though n-type Si wafers show a lower extent of light-induced degradation, similar degradation and regeneration behavior as in p-type Si materials has been observed for various n-type Si monocrystalline materials. In this work, the long-term behavior of minority charge carrier lifetime in non-diffused n-type FZ-Si and Cz-Si wafers during illumination at elevated temperatures is investigated. Thereby, various influencing factors such as peak firing temperature and treatment temperature are considered. Degradation and a very strong regeneration effect, which exceeds the initial effective lifetime value, can be observed in the samples. Since surface-related saturation current density remains almost constant during degradation and regeneration, the effect seems to be bulk related. The extent of degradation and regeneration could be shown to be firing temperature-dependent. It could also be shown for n-type FZ-Si wafers that higher firing temperatures result in an increased H2 content within the silicon bulk. Investigations of the injection-dependent defect density revealed that the defect formed during degradation is not a deep level Shockley-Read-Hall defect. Observations at different treatment temperatures and constant illumination of 0.9(1) sun photon flux equivalent have shown that a higher treatment temperature leads to faster degradation and regeneration kinetics. Similarly, higher injection rates also speed up regeneration kinetics. Since degradation also occurs in darkness, the bulk related degradation effect in n-type FZ-Si is charge carrier-induced and not necessarily light-induced.

Assessment of the annual effective dose and lifetime cancer risks associated with tritium in groundwater within different age groups

Tritium is a radioactive isotope of hydrogen that emits low-energy radiation. When humans are exposed to tritium, the primary concern is internal exposure through inhalation, ingestion, or absorption through the skin. The severity of the adverse health effects depends on the duration, amount, and route of exposure. Therefore, estimating the tritium levels in groundwater and the corresponding health risks within different age groups is essential. The annual effective dose is determined by considering several factors, including the concentration of tritium, the volume of water consumed, and the duration of exposure. The calculated annual effective doses were then compared to the safety limit as directed by international organizations. The estimated tritium concentration in the searched groundwater samples was significantly low, ranging from 0.014 to 0.114 Bq/L. The annual effective dose of tritium exposure for infants, children, and adults varies from 0.028 to 0.605 μSv/y and is within the safe limit recommended by the World Health Organization (WHO) and other international organizations. The lifetime cancer risk (LTCR) for the consumer in the searched areas was estimated for males and females based on the average lifetime. Mortality and morbidity rates varied slightly between males and females across samples due to differences in activity concentrations and locations. However, the estimated LTCR values were below the radiological cancer risk limit. These findings will provide valuable insights to regulatory authorities, assisting them in developing strategies to ensure public safety against human exposure to tritium.

Perovskite Nanocrystals Initiate One‐Step Oxygen Tolerant PET‐RAFT Polymerization of Highly Loaded, Efficient Plastic Nanocomposites

AbstractLead halide perovskite nanocrystals (LHP‐NCs) incorporated within polymer matrices have emerged as promising materials for various photonic applications. However, challenges persist in achieving high‐quality nanocomposites due to low monomer conversion yields, restricted LHP‐NCs loadings, and difficulty in maintaining NCs integrity post‐polymerization. A novel protocol for synthesizing LHP‐NCs/poly(methyl methacrylate) nanocomposites in a single step via the NC‐initiated photoinduced electron transfer‐reversible addition‐fragmentation chain transfer (PET‐RAFT) method is presented. Polymerization initiation mediated by NCs surfaces under blue light enables the fabrication of homogeneous nanocomposites with NCs loadings up to 7% w/w and ≈90% monomer conversion even in the presence of oxygen. This process preserves the optical quality of the NCs and passivates NCs surface defects, resulting in nanocomposites exhibiting near unity luminescence efficiencies. The potential of this approach for producing highly loaded nanocomposites for radiation detection is validated by radioluminescence measurements showing light yield values of 6000 ph MeV−1 and fast scintillation dynamics with effective lifetime of 490 ps, showing promise for time‐of‐flight radiometry.

Determination of Temperature‐ and Carrier‐Dependent Surface Recombination in Silicon

Knowledge regarding the temperature dependence of the surface recombination at the interface between silicon and various dielectrics is critically important as it 1) provides fundamental information regarding the interfaces and 2) improves the modeling of solar cell performance under actual operating conditions. Herein, the temperature‐ and carrier‐dependent surface recombination at the silicon–oxide/silicon and aluminum–oxide/silicon interfaces in the temperature range of 25−90 °C using an advanced technique is investigated. This method enables to control the surface carrier population from heavy accumulation to heavy inversion via an external bias voltage, allowing for the decoupling of the bulk and surface contributions to the effective lifetime. Thus, it offers a simple and versatile manner to separate the chemical passivation from the charge‐assisted population control at the silicon/dielectric interface. A model is established to obtain the temperature dependence of the capture cross sections, a critical capability for the optimization of the dielectric layers and the investigation of the fundamental properties of the passivation under field operating conditions.

The correlation between indoor and soil gas radon concentrations in Kiraz district, İzmir.

All humans are exposed to radon, the primary source of natural radiation, which can harm people due to natural processes rather than human activity. Thus, it is of significant importance to determine the levels of radon in indoor, soil gas, water, and outdoors. Radon concentration (CRn) was measured in Kiraz district, İzmir, and the correlation between the indoor and soil gas CRn values was investigated. The indoor CRn values measured in 40 randomly selected dwellings in Kiraz exhibited a wide range from 19.50 ± 2.50 to 204.70 ± 8.00Bqm-3 with an average value of 61.11 ± 4.23Bqm-3. The measured indoor CRn values were compared to the reference levels in the world to help control radon in the dwellings. Indoor CRn values were lower than the ICRP reference level of 300Bqm-3 in all of the dwellings studied. Furthermore, in 34 dwellings (representing 85% of the total number of dwellings studied), indoor CRn values were lower than the WHO reference level of 100Bqm-3. Health hazard indices, namely annual effective dose (AED) and excess lifetime cancer risk (ELCR), were also calculated for each dwelling and compared with internationally acceptable levels to estimate the risk to human health. The AED values varied from 0.49 ± 0.06 to 5.16 ± 0.20mSv y-1 with an average value of 1.54 ± 0.11mSv y-1, which exceeds the world average of 1.15mSv y-1 as reported by UNSCEAR. The ELCR values ranged from 2.05 ± 0.26 × 10-3 to 21.55 ± 0.84 × 10-3 with an average value of 6.43 ± 0.44 × 10-3, exceeding the world average of 0.29 × 10-3 as reported by UNSCEAR. The soil gas CRn values measured exhibited a wide variation ranging from 129.25 ± 6.38Bqm-3 to 6172.64 ± 44.06Bqm-3 with an average value of 1291.79 ± 18.70Bqm-3. The soil gas CRn values were less than 10,000Bqm-3; hence, the research area is categorized as "low radon risk areas" according to Sweden Criteria, and so no special constructions are required in the studied area. When soil gas CRn values were compared to indoor CRn values, no linear relationship was found between the CRn values. However, a strong positive linear correlation was found between indoor and soil gas CRn values less than 200Bqm-3 and 2500Bqm-3, respectively.

Hydrogenation by catalytically generated atomic hydrogen for passivating contacts in crystalline silicon solar cells

Hydrogenation employing catalytically generated atomic hydrogen (Cat-H) is implemented on stacks of n-type polycrystalline silicon (poly-Si)/Si oxide (SiOx) to enhance passivation quality. The utilization of Cat-H demonstrates a substantial enhancement in surface passivation quality on crystalline Si (c-Si), resulting in an increase of the effective minority carrier lifetime (τeff) from 2.0 to 3.9 ms. The investigation reveals a dependency of τeff on the duration of Cat-H treatment: an initial rise followed by a plateau or slight decline. Secondary ion mass spectrometry (SIMS) measurements revealed the diffusion of H atoms into poly-Si and c-Si, which accumulate at the poly-Si/c-Si interface. This accumulation terminates dangling bonds in the poly-Si layer on the c-Si surface. Furthermore, the presence of an ultra-thin thermal Si oxide layer on the poly-Si layer formed during high-temperature annealing is crucial for protecting the film against etching induced by Cat-H.

Formation and annihilation of bulk recombination-active defects induced by muon irradiation of crystalline silicon

Muons are part of natural cosmic radiation but can also be generated at spallation sources for material science and particle physics applications. Recently, pulsed muons have been used to characterize the density of free charge carriers in semiconductors and their recombination lifetime. Muon beam irradiation can also result in the formation of dilute levels of crystal defects in silicon. These crystal defects are only detected in high carrier lifetime silicon samples that are highly sensitive to defects due to their long recombination lifetimes. This work investigates the characteristics of these defects in terms of their formation, recombination activity, and deactivation. Charge carrier lifetime assessments and photoluminescence imaging have great sensitivity to measure the generated defects in high-quality silicon samples exposed to ∼4 MeV (anti)muons and their recombination activity despite the extremely low concentration. The defects reduce the effective charge carrier lifetime of both p- and n-type silicon and appear to be more detrimental to n-type silicon. Defects are created by transmission of muons through the wafer, and there are indications that slowed or implanted muons may create additional defects. In a post-exposure isochronal annealing study, we observe that annealing at temperatures of up to 450 °C does not by itself fully deactivate the defects. A recovery of charge carrier lifetime was observed when the annealing was combined with Al2O3 surface passivation, probably due to passivation of bulk defects from hydrogen from the dielectric film.

Effective lifetime of Ni laser induced fluorescence excited at 336.9 nm during spark plug discharge

In this study, the laser induced fluorescence lifetime of Ni atoms in ambient air with presence of a plasma discharge was measured for the first time. Free Ni atoms were generated in air at a pressure of 1 bar by spark plug discharges driven by an inductive coil. The Ni atoms were excited at the 336.957 nm absorption line by a 336.96 nm, 90 ps laser pulse and the resulting temporally resolved decaying fluorescence signals were captured by a PMT. An effective fluorescence lifetime of about 1.1 ns was observed for the fluorescence signal within a 7.4 nm detection window centered at 345 nm. Further analysis also revealed that the lifetime of the transition showed statistically insignificant change throughout the duration of the discharge. The peak intensity of the fluorescence signal was found to be proportional to the integrated signal intensities. This in turn suggests that the integrated fluorescence signals in the aforementioned spectral region are proportional to the population density of ground state Ni atoms in the detection volume. The number density of free Ni atoms in the spark gap was measured over time during the plasma discharge, showing an accumulating trend in the beginning phase of the discharge followed by a slow decrease until the termination.

Mapping of uranium concentrations in groundwater samples of Davanagere district, Karnataka, India, and assessment of effective dose to the population.

The geomorphology, geohydrology, lithology and ecological features of the area influence the uranium content in groundwater. The groundwater samples were collected from 75 locations of Davanagere district, Karnataka, India. Uranium analysis in the water samples was done using LED fluorimeter, based on fluorescence of dissolved uranyl salts. The uranium concentration in water samples varied from 18.41 to 173.21μgL-1 with a geometric mean of 39.69μgL-1. Higher uranium concentration in groundwater was observed in Harapanahalli and Jagalur taluk of Davanagere district, which falls in the Eastern Dharwar Craton, which is generally known to contain more radioactive minerals than the Western Dharwar Craton. The effective ingestion dose and lifetime cancer risk to the population were calculated using the obtained uranium concentration in drinking water.

Assessment of indoor radon concentration in the dwellings of the industrial areas of Kannur District, Kerala.

All organisms on the earth-crest are exposed to natural background radiation since the evolution of the earth, as many environmental matrices such as soil, air, water bodies, vegetation, etc., act as the sources of natural radioactivity. The present study deals with the evaluation of indoor concentration of 222Rn (radon) in different dwellings with various construction materials used for the roof and floor in the industrial sites of Kannur district, Kerala. A pinhole-based dosemeter coupled with LR-115 Solid State Nuclear Track Detector and Direct Radon Progeny Sensor (DRPS) were respectively used for the measurement of indoor radon concentration and equilibrium equivalent concentration of radon. The indoor radon concentrations were found to vary from 102.30 Bqm-3 to 184.75 Bqm-3 and the values were within the recommended limits provided by International Commission on Radiological Protection (ICRP). The annual effective doses and excess lifetime cancer risks were observed in the range of 2.58-4.66 mSvy-1 and 7.68×10-3-15.60×10-3, respectively, and both exceed the world average values recommended by United Nations Scientific Committee on the Effects of Atomic Radiation (UNSCEAR) 2000. The study shows that, the houses with marble floors and concrete roofs have comparatively higher values of radon concentration, which indicates the significant contribution of construction materials to the enhanced radiation levels inside the dwellings.