Hydrogenation by catalytically generated atomic hydrogen for passivating contacts in crystalline silicon solar cells

Abstract

Hydrogenation employing catalytically generated atomic hydrogen (Cat-H) is implemented on stacks of n-type polycrystalline silicon (poly-Si)/Si oxide (SiOx) to enhance passivation quality. The utilization of Cat-H demonstrates a substantial enhancement in surface passivation quality on crystalline Si (c-Si), resulting in an increase of the effective minority carrier lifetime (τeff) from 2.0 to 3.9 milliseconds. The investigation reveals a dependency of τeff on the duration of Cat-H treatment: an initial rise followed by a plateau or slight decline. Secondary ion mass spectrometry (SIMS) measurements revealed the diffusion of H atoms into poly-Si and c-Si, which accumulate at the poly-Si/c-Si interface. This accumulation terminates dangling bonds in the poly-Si layer on the c-Si surface. Furthermore, the presence of an ultra-thin thermal Si oxide layer on the poly-Si layer formed during high-temperature annealing is crucial for protecting the film against etching induced by Cat-H.