The III-V group semiconductors have extensive technological applications in the solar cells and light-emitting diodes. The electronic, dynamical, and optical properties of GaSb, GaP, InAs, GaAs, AlSb and AlAs semiconductors are comprehensively analysed using first-principle calculations of the density functional theory. The GGA computed band gaps are in the solar spectrum and found to be low effective charge due to high dispersion in the band structures. The acoustic phonons and optical phonons are obtained in the energy range of 0–33 meV and 21–55 meV, respectively. These phonon results have suggested that all the crystal structures are dynamically stable. Above electronic and phonon results are used to analyse the optical properties. Generally, optical properties are affected by electron-phonon interaction via inter-bond transitions. The phonon influenced dielectric function could effectively enhance the light absorption by electron-phonon coupling which is useful to improve the efficiency of solar cell. Particularly, the phonon role in the shaping of optical absorption has been analysed based on the electron-phonon interaction. The optical absorption shows significant optical absorption (>105 cm−1) for all the semiconductors useful in solar cell applications.