A new selection-free laser structure for monomode behavior based on an engineering of the stripe geometry is proposed. The structure is designed in order to eliminate facet phase effects and laser to laser variations. The effect of spatial hole burning is simulated and an enhancement of the sidemode suppression ratio (SMSR) with power is predicted and measured. Moreover, the sensitivity to technological fluctuations is theoretically analyzed. Experimentally, lasers having a 47-dB SMSR at 10 mW and an excellent homogeneity from laser to laser is obtained on a two inch wafer.
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