Effect Of Mo Doping Research Articles

Effect of Mo Doping and Heat Treatment on Microstructure and Electrochemical Performance of Vanadium Oxide Nanotubes

ABSTRACTMo doped vanadium oxide nanotubes (VONT) were formed via a rheological phase reaction followed by self-assembling process and were heated at 400 □ in an inert atmosphere. The nanotubes were characterized by SEM, HRTEM, XRD, FTIR, electrochemical investigation, etc. In contrast to the undoped VONTs, the interlayer distance between oxide layers in the (V0.99Mo0.01)xONTs increases owing to replacement of some V in nanotubes by Mo with a larger ionic radius, resulting in a shorten diffusion length of Li ions and an improved electrochemical performance. The electrochemical performance of (V0.99Mo0.01)xONTs is further enhanced by removing the residual organic template by heating in an inert atmosphere.

Effect of Mo doping on accelerated growth of C-54 TiSi2: Evidence for template mechanism

The phase sequence of the rapid thermal processing induced reaction at T=650 °C has been studied by a combination of high resolution transmission electron microscopy and image simulations. We found that pre-amorphization of poly-Si substrates does not change the reaction path, i.e., Ti5Si4 and C-49 TiSi2 phases were formed with the latter growing upon further annealing. In the Mo doped poly-Si/Ti system the C-54 TiSi2 phase forms along with Ti5Si4 and two Mo silicide phases, MoSi2 and Mo5Si3; no C-49 TiSi2 was observed. We provide direct evidence that the Ti–Si reaction in the Mo doped system follows the template mechanism with MoSi2 and Mo5Si3 based phases acting as template phases for accelerated growth of C-54 TiSi2. Direct formation of C-54 TiSi2 at lower temperatures bypassing C-49 TiSi2 is very promising for application of the Ti salicide process in the future generation of deep-submicron complementary metal–oxide–semiconductor devices.

Effect of Mo Doping on Formation of Ti-Silicide Phases Studied by HRTEM

AbstractThe phase sequence of the RTP induced reaction at T=650°C has been studied. We found that pre-amorphization of poly-Si substrates does not change the reaction path. i.e. Ti5Si4, and C-49 TiSi2 phases were formed_ with the latter growing upon further anneal. In the Mo doped poly-Si/Ti system the C-54 TiSi2 phase has formed along with Ti5Si4 and two Mo silicide phases, MoSi2 and Mo5Si3; no C-49 TiSi2 was observed. We show that the reaction in the Mo doped system follows the template mechanism with MoSi2 and Mo5Si3 based phase acting as template phases for accelerated growth of C-54 TiSi2.