Abstract
AbstractThe phase sequence of the RTP induced reaction at T=650°C has been studied. We found that pre-amorphization of poly-Si substrates does not change the reaction path. i.e. Ti5Si4, and C-49 TiSi2 phases were formed_ with the latter growing upon further anneal. In the Mo doped poly-Si/Ti system the C-54 TiSi2 phase has formed along with Ti5Si4 and two Mo silicide phases, MoSi2 and Mo5Si3; no C-49 TiSi2 was observed. We show that the reaction in the Mo doped system follows the template mechanism with MoSi2 and Mo5Si3 based phase acting as template phases for accelerated growth of C-54 TiSi2.
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