Effect Of Indium Research Articles

Effect of Indium on Microstructures and Mechanical Properties of Bismuth-Based High Temperature Solders

Effect of Indium on Microstructures and Mechanical Properties of Bismuth-Based High Temperature Solders

Effect of indium and yttrium on the corrosion behavior of AZ63 magnesium alloy

Indium (In) and yttrium (Y) can activate and alleviate the corrosion of magnesium alloy, respectively. The effects of 1 wt% In and 1 wt% Y on the microstructure and electrochemical behaviors of Mg-6 wt%Al-3 wt%Zn (AZ63) magnesium alloy are investigated via materials characterizations associated with electrochemical techniques. The results showed that co-alloying of In and Y would increase the number of intermetallic phases in AZ63 by generating discrete Al2Y phase and continuous Mg17Al12 phase. During the process of corrosion, the corrosion of Mg-6 wt%Al-3 wt%Zn-1 wt%In-1 wt%Y(AZ63InY) initiates from the intermetallic phases and propagates locally. The corrosion products are apt to adhere on the corroded surface, underneath which a severe corrosion takes place due to the enhanced dissolution-reprecipitation effect of In on activating Mg.

Effect of Indium on the Properties of Mg-Zn-Based Alloys

In this study, indium was added to the binary Mg-Zn alloy to prepare an ultrafine-grained ternary Mg-Zn-In alloy with enhanced mechanical and corrosion properties. The bulk Mg-Zn-In alloy was synthesized through a combination of mechanical alloying and powder metallurgy techniques. The SPEX 8000 mixer mill was used to carry out the process under an argon atmosphere. The mixed powders were mechanically alloyed for 24 h. The mixture was uniaxially pressed at a compacting pressure of 600 MPa. The green compacts were sintered under a protective argon atmosphere at 300 °C for 1 h. The evolution of the microstructural, mechanical, and corrosion properties of Mg-based alloys was studied. X-ray diffraction and scanning electron microscopy were used to analyze the phase and microstructure. The changes in hardness and corrosion properties were also measured. Compared to binary Mg-Zn alloy samples modified with In, the samples exhibited a higher microhardness, which can be related to structure refinement and phase distribution. Based on the results of electrochemical testing, it was observed that the modified samples exhibited an improved level of corrosion resistance compared to the Mg-Zn binary alloy.

Effect of indium (III) doping on Ag3PO4 catalyst stabilization and its visible light photocatalytic activity toward toxic dyes in water.

Indium(III)-doped Ag3PO4 (In-AgP) catalysts at different weight percentages were elaborated by co-precipitation and subjected to XRD, SEM, UV-vis DRS, and FTIR characterization. The prepared catalysts were of spherical morphology and their diameters depends on doping dosage. The whole materials crystallize in a centered cubic system with a slight dissimilation in the positions of the characteristic peaks as a function of indium dosage. The photocatalytic performance of the catalysts under visible light was investigated in the photocatalytic degradation of anionic dye (methyl orange (MO)) and cationic dye (auramine O (AO)) in moderate acid, neutral, and basic pH conditions. Results showed more selectivity to MO than AO. Furthermore, indium-doped samples are more active in the acidic medium than the pure Ag3PO4 (AgP), and 10%In-AgP catalyst presents the highest activity. The degradation efficiency reached 99 % in 60 min for MO and in 180 min for AO. In addition, a high recycling stability was achieved and the catalyst retains its degradation capacity above 99 % after five cycles.

Effect of indium on the electrochemical properties of aluminum anodes for the protection of carbon steel

Effect of indium on the electrochemical properties of aluminum anodes for the protection of carbon steel

Experimental characterization of ZnO properties and the impact of doping and DFT methods

This study focuses on zinc oxide by both computational and experimental methods. Pure and In-doped ZnO thin films were produced by spray pyrolysis at 300∘C onto glass substrate. X-ray patterns reveal the polycrystalline structure according to wurtzite along the (002) direction recording a smaller grain size in nanometric scale. This aspect is confirmed by AFM scanned pictures. High transparency of thin film is observed in spite of the indium insertion into ZnO lattice which decreases it slightly. A wide bandgap exceeds 3[Formula: see text]eV of such as-grown films were recorded. Blue and orange emissions were detected as confirmed by photoluminescence analysis. Computational result analysis is used to demonstrate the ideal geometries in the ground states of pure and doped ZnO. The UV–visible absorption band shifts from 360[Formula: see text]nm to 448[Formula: see text]nm as a result of In-doping. The HUMO and LUMO diagrams demonstrate a drop in energy E as a result of doping, and the DOS profiles validate and confirm this detail. Also, the effect of indium on the linear and nonlinear optical parameters of zinc oxide was discussed.

Effect of In-doping on electrochromic behavior of NiO thin films

Undoped and Indium doped Nickel Oxide (NiO) thin layers with different doping content (2, 4, 6 at.%) were successfully deposited on glass and Indium-doped Tin Oxide (ITO) substrates using spray pyrolysis (SP) technique. The effect of indium on the microstructural, morphological, optical, and electrochromic behaviors of NiO films was investigated by X-ray diffraction (XRD), Raman spectroscopy, Scanning Electron Microscopy coupled with Energy Dispersive X-ray Spectroscopy, UV–Vis-NIR spectrophotometry. XRD examination shows that all NiO layers have a polycrystalline cubic phase with a preferred orientation along the (111) plane. Raman spectroscopy proves the XRD result. SEM images show nanograins formation in all the sprayed films. The EDS analysis and the elemental mapping reveal the homogeneous distribution of the elements. The optical analysis reveals an average transmission of about 72% in the visible light region and an optical band gap energy of 3.54 eV for the undoped sample. These values decreased with increasing Indium content to reach 65% and 3.46 eV, respectively for the 6 at.% In-doped sample. The electrochromic behavior of NiO films deposited on ITO substrates was measured by cyclic voltammetry in a 2 M KOH aqueous electrolyte. The results show that a specific capacitance of 66 F. g − 1 at 5 mV.s − 1, an optical density variation of 43%, and a coloration efficiency of 93.74 cm2/C were obtained for 2 at.% In doped NiO. These values are considerably higher than those obtained for the undoped films, indicating that the In doping improved the electrochromic performance of nickel oxide films.

A study on the mechanism of Indium phosphide/zinc sulfide core/shell quantum dots influencing embryo incubation of rare minnow (Gobiocypris rarus)

Quantum dots (QDs) inhibit fish hatching, but the mechanism is still unclear. In this study, the effect of Indium phosphide/zinc sulfide quantum dots (InP/ZnS QDs) on the embryo incubation of rare minnow was investigated. Five experimental concentration groups were set up according to the preliminary experimental results, which were 0, 50, 100, 200 and 400 nM. A direct exposure method was adopted to expose embryos to InP/ZnS QDs solution. The results showed that InP/ZnS QDs significantly inhibited the embryo hatching rate, delayed embryo emergence, affected the expression of genes associated with hatching gland cells and hatching enzymes. InP/ZnS QDs also destroy the structure of the embryo chorion. In addition, QDs can cause oxidative stress in embryos. Transcriptional sequencing analysis showed that InP/ZnS QDs InP/ZnS QDs may have induced the production of a hypoxic environment and triggered induce abnormal cardiac muscle contraction, inflammatory response and apoptosis process in embryos. In conclusion, QDs influences embryo hatchability largely through egg chorion mediation.

Effects of Indium and Gallium ratio on tarnish resistance, corrosion and mechanical properties of 950 silver alloy

The effects of Indium (In) and Gallium (Ga) ratio on tarnish resistance, corrosion and mechanical properties of 950 silver alloy were studied. 950 Silver alloy with aluminium (Al), silica (Si) and germanium (Ge) were added with In and Ga at the range of 0.44 to 1.90 weight percent. The increment of secondary structure with Ge-Si rich phase in Ag-Al alloy increases hardness, but reduces ultimate tensile strength. The addition of In and Ga improves tarnish and corrosion resistance. The color differences as indicated by Delta E tolerances (DE*) of Ag-Al alloys are in the range of 8.64 to 11.40 while this property of Ag-Cu is 39.37. Ecorr of Ag-Al alloys are in the range of -0.068 to -0.010 V which are higher than that of Ag-Cu Alloy (-0.147 V). Besides, Ga is more effective for tarnish and corrosion resistance than In. However, Ga/In co-addition reduces these properties by the formation of Ge-Si-Ga-In phase. The protective thin film of Ag-Al alloy was detected by XPS. The Al2O3, In2O3 and Ga2O3 films were found. When the proportion of Ga in Ag-Al alloys increases, the hardness marginally increases while the tensile strength slightly reduces. The additions of Al, Ga, In, Ge and Si reduce the melting point of Ag-Al alloys comparing with Ag-Cu alloy and simultaneously improve the casting quality.

Effects of Indium on Wetting and Interfacial Features of a Sn-40Bi Alloy in a Copper Substrate

Effects of Indium on Wetting and Interfacial Features of a Sn-40Bi Alloy in a Copper Substrate

Effect of indium on the microstructure and corrosion resistance of the galvanising coating

The addition of alloying elements to a zinc bath is an effective method to inhibit silicon reactivity while galvanising silicon-containing steel. In this work, the effect of indium on the microstructure and corrosion resistance of galvanising coating on the Q235 steel was investigated. The results show that indium can promote the dense Γ phase to form, 0.79 wt-% Si can be dissolved in the ζ phase with the addition of indium into the zinc bath, which decreased the segregation of silicon at ζ phase boundaries and reduced the liquid phase channel, and inhibited the rapid growth of the ζ phase. Indium can improve the corrosion resistance of the coating. Compared with pure zinc coating, the self-corrosion current of Zn-0.4In coating decreased by 9.59 µA/cm2.

Effect of indium on microstructure, mechanical properties, phase stability and atomic diffusion of Sn-0.7Cu solder: Experiments and first-principles calculations

Sn-0.7Cu–In ternary alloy solders have received much attention because of their excellent weld stability and wettability. However, how to inhibit or slow down the formation of defects at the welding interface has always been the focus of research. The effects of In on melting point and microstructure of Sn-0.7Cu solders and phase stability and growth rate of intermetallic compounds (IMCs) in the solders were investigated by means of experiments and first-principles calculations. The Rietveld refinement results showed that the lattice constants of β-Sn and η′-Cu6Sn5 (Cu6Sn5) phases increase after In addition. Moreover, In can decrease the melting point, but increase the melting range of Sn-0.7Cu solders. After adding In, the ultimate tensile strength (UTS) increases, while the elongation decreases. From the first-principles calculation results, the stability of Cu6Sn5 increases after In doping, and In doping results in the formation of new chemical bonds between In atom and the neighboring Cu and Sn atoms. Ultimately, the diffusion activation energy and atomic migration barrier of the Cu atom increase after In doping, which in turn decreases the growth rate of Cu6Sn5.

Development of the multi-quantum wells structures based on InxGa1-x As1-yNy/GaAs for solar cells applications

In order to improve the solar cell efficiency, quantum multi-wells have been implanted into the intrinsic region of the structure. We can absorb the photons that have a lower energy than the bandgap energy. In this work, physical and optical phenomena that influence the efficiency of the solar cell have been modeled, simulated and optimized. In addition, the effects of indium (x) and nitrogen (N) concentrations, the quantum wells number (nQWs) and the quantum well width (Lw) on structural stability, bandgap energy, external quantum efficiency and the solar cell output parameters were studied. For indium and nitrogen concentrations x = 35%, y = 3.5% respectively, a quantum well width LW = 8 nm and quantum wells number nQWs of 50, we have obtained a strain (ε) of about 1.77%. The obtained external quantum efficiency (EQE) in this case is about 86.23%, while the efficiency (η) is 33.60%. We can improve this work by using other materials.

Coke-resistant Ni-based bimetallic catalysts for the dry reforming of methane: effects of indium on the Ni/Al2O3catalyst

In the quest for highly efficient coke-resistant catalysts for the dry reforming of methane (DRM) to produce syngas, a series of Ni–In/γ-Al2O3catalysts with various Ni contents were preparedviaa “two-solvent” method and used for the DRM reaction.

Effect of Indium on Microstructure, Mechanical Properties, Phase Stability and Atomic Diffusion of Sn-0.7cu Solder: Experiments and First-Principles Calculations

Effect of Indium on Microstructure, Mechanical Properties, Phase Stability and Atomic Diffusion of Sn-0.7cu Solder: Experiments and First-Principles Calculations

CO2 hydrogenation to methanol over partially embedded Cu within Zn-Al oxide and the effect of indium

Developing effective catalysts for CO2 hydrogenation to methanol is an important step to improve the efficiency of a promising process for green synthesis of fuels and chemicals. Optimizing the Cu dispersion is often the main goal in preparing Cu/ZnO-based catalysts due to the strong dependence of the catalytic activity on the Cu surface area. However, the catalytic properties are also related to the nature of the Cu-ZnO interface. Herein, a series of hydrotalcite-derived Cu/ZnO/Al2O3 catalysts were prepared for CO2 hydrogenation to methanol. The preparation method results in partially embedded Cu particles within the Zn-Al oxide matrix. This microstructure exhibits significantly enhanced intrinsic activity and methanol selectivity. Loss of the interfacial area between Cu and Zn-Al mixed oxide phase due to sintering of Zn-Al matrix is identified as the main reason for deactivation of the HT-derived catalysts. The influence of In on Cu/ZnO-based catalysts is also investigated. It is found that In decreases the activity but increases the methanol selectivity and stabilizes the Cu particles and the Zn-Al mixed oxide phase. The lower activity of the In-containing catalysts is linked to the inhibition of Cu active sites by CuxIny species.

Effects of Indium on corrosion behavior of Mg-Al-Cu alloy

A series of Mg-Al-Cu-In alloys with different In contents (0-3 wt%) were prepared to investigate the effect of In on corrosion of Mg alloys. The microstructure investigation shows that In does not change the phase constituents of alloys, but reduces Al content in α-Mg and β-phase size of Mg-Al-Cu alloy. The weight loss measurements in NaCl solution at different water temperatures found that the weight loss rates of alloys depend on In addition of alloys and water temperature. Compared to In-free alloy, the weight loss rates of In-bearing alloys are increased significantly. As In addition is 2 wt%, the alloys exhibit the maximum weight loss rate at high water temperature (70 °C and 90 °C). The electrochemical measurements were conducted to investigate the electrochemical behavior of alloys. Reasons concerning the different corrosion behaviors of Mg-Al-Cu-In alloys are discussed.

Effect of Indium on the Negative Difference Effect for Magnesium Alloy

The Mg-xIn (x = 0.5, 1, 1.5 wt.%) alloys exhibit the negative difference effect. This anomalous phenomenon was studied in 0.1 M NaCl solution using galvanostatic polarization testing and real-time hydrogen collection. Strong anomalous hydrogen evolution was observed in all three magnesium alloys, but the rate of hydrogen evolution at different anodic current densities decreased with the increased content of In element. It shows that adding indium to Mg can reduce the negative difference effect of Mg alloy. Assessment of the exchange current density for hydrogen evolution reaction supported the previously-proposed kinetic model. The exchange current density related to the hydrogen evolution reaction decrease with the increased content of In element, indicating the ability of magnesium alloys to support the cathodic reaction is weakened, and In element can effectively reduce the negative difference effect of magnesium alloy.

Transforming Zn(O,S) from UV to visible-light-driven catalyst with improved hydrogen production rate: Effect of indium and heterojunction

Zn(O,S)-based materials have been studied for the last few years but only could be driven under ultraviolet (UV) light due to its high bandgap energy. Herein, we transform Zn(O,S) from UV to a visible-light-driven catalyst. (Zn,In)(O,S) material system at different In contents was prepared by adding indium precursor into the hydrothermal process. With increasing the In content from 0%, 10%, 50%, 67%, and 100% the Zn(O,S), (Zn,In)(O,S) solid solution, (Zn,In)(O,S)/In(OH)3 composite, ZnIn2(O,S)4, and In2(O,S)3 appeared in sequence. (Zn,In)(O,S) prepared with 50 mol% indium precursor was a ZI-50 composite powder and showed the optimum hydrogen evolution reaction (HER) rate under visible light illumination. A kinetic mechanism for enhancing photocatalytic hydrogen evolution based upon heterojunction was proposed and explained.

Enhanced gas sensing properties of In doped ZnO thin films

In the present work, the effect of indium (In) doping on the various properties of the zinc oxide (ZnO) thin films was investigated. The pure and 5% In doped ZnO thin films have been synthesized via the successive ionic layer adsorption and reaction (SILAR) method on glass substrates. The X-Ray Diffraction (XRD) analysis clearly indicated the well-crystalline wurtzite structure of ZnO and 5% In-ZnO films. The Scanning Electron Microscopy (SEM) study depicted the formation of granular and nanoflower structures on the surface of the synthesized films. The band-gap energy and the grain size values of 5% In-ZnO were found to be 3.32 eV and 22.33 nm, respectively. Also, the indium incorporation into ZnO made a significant change on the structural, morphological properties, and enhanced the gas-sensing performance of ZnO host material.