Effect Of Implantation Dose Research Articles

The effects of implantation dose and anneal temperature on the layered structure and electrical properties of oxygen-ion-implanted silicon-on-insulator

The implantation dose and the anneal temperature are two crucial parameters in the formation mechanism of silicon-on-insulator by oxygen-ion-implantation, SIMOX. The effects of these parameters on the multilayer structure of SIMOX have been nondestructively evaluated using spectroscopic and multiple-angle ellipsometry. These observations show strong correlation with data obtained by selective etching and single-mode ellipsometry. Electrical results are reported on the activation of oxygen-induced thermal donors and new donors.

Activation analysis of rapid thermally annealed Si and Mg implanted semi-insulating GaAs

Electronic properties of Si and Mg implants in undoped semi-insulating GaAs are studied. The activation of the implants is achieved by rapid thermal annealing. The effects of implantation dose and anneal temperature on the measured electrical activity are investigated. In spite of similar depth distributions and implantation damage characteristics, a marked difference between the activations of the Si and the Mg ions is observed for the dose range considered (3×10^12 – 1×10^14 cm^–2). Lattice strain measurements performed by x-ray rocking curves indicate that the residual implantation damage after annealing is not largely responsible for this difference. The difference is mostly electronic in character, as also suggested by photoluminescence measurements. At high annealing temperatures, changes in the compensating properties of undoped semi-insulating GaAs are suspected, and are found to play an important role in the activation of implanted ions, affecting the n- and p-type dopants conversely.

A Study of the Effects of Implantation Dose and Annealing Temperature on the Formation of Buried Nitride SOI Structures

AbstractNitrogen implantation into single-crystal silicon can result in a buried nitride layer under proper processing conditions. SOI structures have been formed using this technique. The optimum parameters for forming a buried nitride layer with good insulating characteristics have been investigated. Nitrogen was implanted into <100> silicon at 200 keV at an implantatipp tem erature of 500°C. The effect of implantation doses of 1.05 × 1018N+/cm2, 1.3 × 1018N+/cm+ and 1.4 × 1018N+ /cm+ and post-implantation annealing temperatures of 1050, 1100, 1150, and 1200°C on the buried nitride layer was studied. Transmission Infrared Spectroscopy was used to determine the structure (amorphous or crystalline) of the buried nitride layer. The infrared spectra change as a function of annealing temperature, indicating the transition from amorphous to crystalline silicon nitride. Leakage currents through the structures were measured and SEM micrographs of the nitride surfaces were taken. The correlation between the IR results and these data will be presented.

Lattice defects in ion-implanted aluminium studied by means of perturbed angular correlations

Migration and clustering of lattice defects after implantation of111In in Al and subsequent annealing at temperatures in the range from 80 to 800 K were investigated applying the DPAC technique. The effects of implantation dose, implantation temperature, laser irradiation, and plastic deformation were studied. The measurements on plastically deformed Al were complemented by positron lifetime measurements. We observed four In-defect clusters that can be flagged by well-defined hyperfine interaction parameters, and we determined their symmetry properties by using single-crystal samples. Important conclusions are: (i) monovacancies are not trapped by In-atoms, (ii) small In-defect clusters are formed by direct trapping of divacancies and/or trivacancies, and (iii) extended In-defect clusters are very stable and anneal in the temperature range 600–700 K. Consequences for the interpretation of other measurements on dilute Al(In) alloys are discussed.

Effect of implantation dose on the hardness, friction, and wear of Sb-implanted Al

The hardness, friction, and wear behavior of Sb+-implanted commercially pure Al was investigated. The specimens were implanted at 200 KeV to doses of between 1013 and 1017 ions/cm2. Hardness was observed to increase linearly with dose. The increase in wear resistance was not dose dependent and the high doses were found to increase friction. Rutherford backscattering analysis revealed a significant damage of the Al lattice at high doses. It also showed that Fe and Cu, which are impurities in Al, diffused to and away from the implanted surface, respectively. Scanning electron microscopy indicated the formation of Sb and Fe precipitates. The mobility of implanted ions and impurity atoms is considered to be associated with the point defects created during the implantation of Sb+. The changes in the mechanical properties investigated probably resulted from the pinning effect that these defects and precipitates, and their associated stress fields, exert on dislocations.

Ferromagnetic resonance study of the anisotropy field and nonmagnetic regions in implanted layers of bubble garnet films

The effects of implantation dose and annealing on the anisotropy field of the implanted layer in bubble garnet films were investigated by ferromagnetic resonance. For large implantation dose, the existence of a nonmagnetic layer inside the implanted layer was verified and its boundaries were located. For smaller doses, the implanted region remains magnetic, but the negative shift in anisotropy field increases and the exchange constant decreases with increasing dose. For intermediate dose an internal nonmagnetic layer is created with a surface magnetic layer which resonates as an uncoupled region. The nonmagnetic layer extends to the surface at higher dose, and its thickness increases with increasing implantation dose.