Abstract
The implantation dose and the anneal temperature are two crucial parameters in the formation mechanism of silicon-on-insulator by oxygen-ion-implantation, SIMOX. The effects of these parameters on the multilayer structure of SIMOX have been nondestructively evaluated using spectroscopic and multiple-angle ellipsometry. These observations show strong correlation with data obtained by selective etching and single-mode ellipsometry. Electrical results are reported on the activation of oxygen-induced thermal donors and new donors.
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