Abstract
Effects of implantation dose and laser beam wavelength on sheet resistivity reduction were studied for As-implanted and Q-switched Nd:YAG laser irradiated 5000 Å thick LPCVD poly-Si films on SiO2. Activated atom ratio (carrier concentration to implantation dose) decreases as the dose increases for the 0.53 µm laser irradiated samples at 0.35 J/cm2, because crystalline recovery depends on the implantation dose. Laser wavelength effect is found for 3×1016 cm-2 implanted sample, and the lower sheet resistivity is obtained by 1.06 µm laser irradiation rather than 0.53 µm one due to advanced recovery without poly-Si surface degradation.
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