We report the growth and characterization of Silicon nanowires (SiNWs) via the VLS mechanism with two different tin (Sn) catalyst thicknesses of 2 and 4 nm at 400 and 500 °C by PECVD. The effect of catalyst thickness, plasma power density and growth temperature on the morphology of nanowires is investigated. The structural morphology of the grown NWs is analyzed using FESEM and HRTEM. It has been inferred the density, diameter and length of NWs can be effectively controlled by PECVD process parameters. HRTEM analysis demonstrates a highly crystalline silicon core with (111) plane as preferred orientation. Grazing incidence X-ray diffraction spectra of the samples prepared at two different temperatures confirmed the (111), (220) and (311) plane orientation of the grown NWs. Raman spectra of the SiNWs grown on glass substrate shown broadened spectrum centering at 508 cm-1 confirming the crystalline nature of NWs core surrounded with dense layer of a-Si. Optimized parameters are used to fabricate radial junction solar cells and the effect of catalyst thickness on the performance is explored. Short circuit current density of 13.53 mA/cm2 and open circuit voltage of 0.82 V for 0.25 cm2 solar cell having power conversion efficiency of 6.66% is obtained.
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