Uranium exhibits high chemical activity. The preparation of single crystalline uranium films via molecular beam epitaxy, followed by in situ characterization under ultrahigh vacuum condition, effectively avoids sample contamination caused by the environmental atmosphere. In this work, single crystalline uranium films were grown on the W(110) surface by a deflected electron beam evaporator. The optical constants of the W(110) substrate and the uranium films were obtained through in situ ultrahigh vacuum spectroscopic ellipsometry, while the electronic structure of uranium films was measured by angle-resolved photoemission spectroscopy (ARPES). Notably, the optical constants of uranium film differ from those previously reported measured by the ex situ experiments. The band structure and optical constants of the uranium film were calculated by the ab initio method, and theoretical calculations were compared with the experimental results. The calculated band structure of α-U is consistent with the bulk electronic structure of uranium films measured by ARPES, except for a surface-state-like feature. The parameters of the Drude oscillator derived from the ellipsometric fitting were used to revise the calculated optical constants, which obviously improves the accuracy of the calculations. Our study provides the most strictly fundamental data of the uranium up to now.