The growth of SnO2 nanowires on silicon substrates using a vapor-liquid-solid (VLS) technique has been theoretically modeled. Since VLS is a catalyst-based method, we have initially modeled the gold droplet using a modified Young’s equation to be more suitable for SnO2 nanowires. Apart from the droplet geometry, the flow profile of the source vapor can also affect the overall formation of nanowires. This effect is more predominant for solid sources of SnO vapor where highly variable density and length of nanowires are observed. To understand this complex phenomenon, we describe a spatial growth model to predict the observed profile of SnO2 nanowires at different locations on silicon substrates. The model is based on gas transportation over the nanosized catalyst droplets, leading to a gradual reduction in both the length and density of the grown wires. This theoretical model is applied to a randomly patterned distribution of gold catalysts, and the results are consistent with the experimental findings. Since gold is used as the growth catalyst for tin oxide nanowires, the parameters of gold droplets atop silicon nanowire and Young’s angle are extracted.
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