DP Mechanism Research Articles

Towards Privacy in Decentralized IoT: A Blockchain-Based Dual Response DP Mechanism

Towards Privacy in Decentralized IoT: A Blockchain-Based Dual Response DP Mechanism

Direct Observation of Circularly Polarized Nonlinear Optical Activities in Chiral Hybrid Lead Halides.

Circularly polarized light emission is a crucial application in imaging, sensing, and photonics. However, utilizing low-energy photons to excite materials, as opposed to high-energy light excitation, can facilitate deep-tissue imaging and sensing applications. The challenge lies in finding materials capable of directly generating circularly polarized nonlinear optical effects. In this study, we introduce a chiral hybrid lead halide (CHLH) material system, R/S-DPEDPb3Br8·H2O (DPED = 1,2-diphenylethylenediammonium), which can directly produce circularly polarized second harmonic generation (CP-SHG) through linearly polarized infrared light excitation, exhibiting a polarization efficiency as high as 37% at room temperature. To understand the spin relaxation mechanisms behind the high polarization efficiency, we utilized two models, so-called D'yakonov-Perel' (DP) and Bir-Aronov-Pikus (BAP) mechanisms. The unique zigzag inorganic frameworks within the hybrid structure are believed to reduce the dielectric confinement and exciton binding energy, thus enhancing spin polarization, especially in regions with a high excitation pump fluence based on the DP mechanism. In the case of low excitation pump fluence, the BAP mechanism dominates, as evidenced by the observed decrease in the polarization ratio from CP-SHG measurement. Using density functional theory analysis, we elucidate how the distinctive 8-coordination environment of lead bromide building blocks effectively suppresses spin-orbit coupling at the conduction band minimum. This suppression significantly diminishes spin-splitting, thereby slowing the spin relaxation rate.

Giant Spin Lifetime Anisotropy and Spin-Valley Locking in Silicene and Germanene from First-Principles Density-Matrix Dynamics.

Through first-principles real-time density-matrix (FPDM) dynamics simulations, we investigated spin relaxation due to electron-phonon and electron-impurity scatterings with spin-orbit coupling (SOC) in two-dimensional Dirac materials silicene and germanene at finite temperatures. We discussed the applicability of conventional descriptions of spin relaxation mechanisms by Elliott-Yafet (EY) and D'yakonov-Perel' (DP) compared to the FPDM method, which is determined by a complex interplay of intrinsic SOC, external fields, and scattering strength. For example, the electric field dependence of the spin lifetime by FPDM is close to the DP mechanism for silicene at room temperature but similar to the EY mechanism for germanene. Because of its stronger SOC strength and buckled structure in contrast to graphene, germanene has a giant spin lifetime anisotropy and spin-valley locking effect under nonzero Ez and low temperatures. More importantly, germanene has a long spin lifetime (∼100 ns at 50 K) and an ultrahigh carrier mobility, making it advantageous for spin-valleytronic applications.

Local Differential Privacy for Bayesian Optimization

Motivated by the increasing concern about privacy in nowadays data-intensive online learning systems, we consider a black-box optimization in the nonparametric Gaussian process setting with local differential privacy (LDP) guarantee. Specifically, the rewards from each user are further corrupted to protect privacy and the learner only has access to the corrupted rewards to minimize the regret. We first derive the regret lower bounds for any LDP mechanism and any learning algorithm. Then, we present three almost optimal algorithms based on the GP-UCB framework and Laplace DP mechanism. In this process, we also propose a new Bayesian optimization (BO) method (called MoMA-GP-UCB) based on median-of-means techniques and kernel approximations, which complements previous BO algorithms under heavy-tailed payoffs with reduced complexity. Further, empirical comparisons of different algorithms on both synthetic and real-world datasets highlight the superior performance of MoMA-GP-UCB in both private and non-private scenarios.

ConTPL: Controlling Temporal Privacy Leakage in Differentially Private Continuous Data Release.

In many real-world systems, such as Internet of Thing, sensitive data streams are collected and analyzed continually. To protect privacy, a number of mechanisms are designed to achieve ϵ-differential privacy for processing sensitive streaming data, whose privacy loss is rigorously controlled within a given parameter ϵ. However, most of the existing studies do not consider the effect of temporal correlations among the continuously generated data on the privacy loss. Our recent work reveals that, the privacy loss of a traditional DP mechanism (e.g., Laplace mechanism) may not be bounded by ϵ due to temporal correlations. We call such unexpected privacy loss Temporal Privacy Leakage (TPL). In this demonstration, we design a system, ConTPL, which is able to automatically convert an existing differentially private streaming data release mechanism into one bounding TPL within a specified level. ConTPL also provides an interactive interface and real-time visualization to help data curator understand and explore the effect of different parameters on TPL.

Spin-polarization dependent carrier recombination dynamics and spin relaxation mechanism in asymmetrically doped (110) n-GaAs quantum wells

Carrier recombination and electron spin relaxation dynamics in asymmetric n-doped (110) GaAs/AlGaAs quantum wells are investigated with time-resolved pump-probe spectroscopy. The experiment results reveal that the measured carrier recombination time depends strongly on the polarization of pump pulse. With the same pump photon flux densities, the recombination time of spin-polarized carriers is always longer than that of the spin-balanced carriers except at low pump photon flux densities, this anomaly originates from the polarization-sensitive nonlinear absorption effect. Differing from the traditional views, in the low carrier density regime, the D'yakonov–Perel' (DP) mechanism can be more important than the Bir–Aronov–Pikus (BAP) mechanism, since the DP mechanism takes effect, the spin relaxation time in (110) GaAs QWs is shortened obviously via asymmetric doping.

Intuitive approach to the unified theory of spin relaxation

Spin-relaxation is conventionally discussed using two different approaches for materials with and without inversion symmetry. The former is known as the Elliott-Yafet (EY) theory and for the latter the D'yakonov-Perel' (DP) theory applies, respectively. We discuss herein a simple and intuitive approach to demonstrate that the two seemingly disparate mechanisms are closely related. A compelling analogy between the respective Hamiltonian is presented and that the usual derivation of spin-relaxation times, in the respective frameworks of the two theories, can be performed. The result also allows to obtain the less canonical spin-relaxation regimes; the generalization of the EY when the material has a large quasiparticle broadening and the DP mechanism in ultrapure semiconductors. The method also allows a practical and intuitive numerical implementation of the spin-relaxation calculation, which is demonstrated for MgB$_2$ that has anomalous spin-relaxation properties.

Spin-relaxation time in materials with broken inversion symmetry and large spin-orbit coupling

We study the spin-relaxation time in materials where a large spin-orbit coupling (SOC) is present which breaks the spatial inversion symmetry. Such a spin-orbit coupling is realized in zincblende structures and heterostructures with a transversal electric field and the spin relaxation is usually described by the so-called D’yakonov-Perel’ (DP) mechanism. We combine a Monte Carlo method and diagrammatic calculation based approaches in our study; the former tracks the time evolution of electron spins in a quasiparticle dynamics simulation in the presence of the built-in spin-orbit magnetic fields and the latter builds on the spin-diffusion propagator by Burkov and Balents. Remarkably, we find a parameter free quantitative agreement between the two approaches and it also returns the conventional result of the DP mechanism in the appropriate limit. We discuss the full phase space of spin relaxation as a function of SOC strength, its distribution, and the magnitude of the momentum relaxation rate. This allows us to identify two novel spin-relaxation regimes; where spin relaxation is strongly non-exponential and the spin relaxation equals the momentum relaxation. A compelling analogy between the spin-relaxation theory and the NMR motional narrowing is highlighted.

Spin relaxation dynamics of holes in intrinsic GaAs quantum wells studied by transient circular dichromatic absorption spectroscopy at room temperature

Spin relaxation dynamics of holes in intrinsic GaAs quantum wells is studied using time-resolved circular dichromatic absorption spectroscopy at room temperature. It is found that ultrafast dynamics is dominated by the cooperative contributions of band filling and many-body effects. The relative contribution of the two effects is opposite in strength for electrons and holes. As a result, transient circular dichromatic differential transmission (TCD-DT) with co- and cross-circularly polarized pump and probe presents different strength at several picosecond delay time. Ultrafast spin relaxation dynamics of excited holes is sensitively reflected in TCD-DT with cross-circularly polarized pump and probe. A model, including coherent artifact, thermalization of nonthermal carriers and the cooperative contribution of band filling and many-body effects, is developed, and used to fit TCD-DT with cross-circularly polarized pump and probe. Spin relaxation time of holes is achieved as a function of excited hole density for the first time at room temperature, and increases with hole density, which disagrees with a theoretical prediction based on EY spin relaxation mechanism, implying that EY mechanism may be not dominant hole spin relaxation mechanism at room temperature, but DP mechanism is dominant possibly.

Ultrafast electron spin dynamics in bulk CdTe investigated by femtosecond pump-probe reflection spectroscopy

The transient spin polarization dynamics in bulk cadmium telluride (CdTe) at 70 K is investigated by the circularly polarized pump-probe reflection technique. A general expression is derived from the rate equations of a two-level system with small signal approximation to describe the light-helicity-dependent reflection spectrum. The initial degree of electron spin polarization in the excited state and the electron spin relaxation time in bulk CdTe at low temperature with different carrier density are analyzed according to this model. Our experimental results reveal that the Dʼyakonov–Perelʼ mechanism based on a fully microscopic kinetic spin Bloch equation (microscopic KSBE) approach dominates in the electron spin relaxation process in bulk CdTe crystal. • The transient spin polarization dynamics in bulk CdTe at 70 K is investigated. • A general expression is derived from the rate equations of a two-level system. • P s 0 and τ s in bulk CdTe are analyzed according to this model. • The DP mechanism based on KSBE dominates the electron spin relaxation process.

Electron spin relaxation in graphene with random Rashba field: comparison of the D'yakonov–Perel' and Elliott–Yafet-like mechanisms

To understand the main spin relaxation mechanism in graphene, we investigate the spin relaxation with random Rashba field (RRF) induced by both adatoms and a substrate using the kinetic spin Bloch equation approach. The charged adatoms, on the one hand, enhance the Rashba spin–orbit coupling locally and, on the other hand, serve as Coulomb potential scatterers. Both effects contribute to spin relaxation limited by the D'yakonov–Perel' (DP) mechanism. In addition, the RRF also causes spin relaxation by spin-flip scattering, manifesting itself as an Elliott–Yafet (EY)-like mechanism. Both mechanisms are sensitive to the correlation length of the RRF, which may be affected by environmental parameters such as electron density and temperature. Fitting and comparing the experiments of the Groningen group (Józsa et al 2009 Phys. Rev. B 80 241403(R)) and the Riverside group (Pi et al 2010 Phys. Rev. Lett.104 187201; Han and Kawakami 2011 Phys. Rev. Lett.107 047207), which show either DP (with the spin relaxation rate being inversely proportional to the momentum scattering rate) or EY-like (with the spin relaxation rate being proportional to the momentum scattering rate) properties, we suggest that the DP mechanism dominates the spin relaxation in graphene. The latest experimental finding of a nonmonotonic dependence of spin relaxation time on diffusion coefficient by Jo et al 2011 (Phys. Rev. B 84 075453) is also well reproduced by our model.

Correlation between morphology and electron spin relaxation time in GaAs/AlGaAs quantum wells on misoriented GaAs(110) substrates

We investigated the correlation between morphology and electron spin relaxation time in GaAs/AlGaAs multiple quantum wells (MQWs) on misoriented GaAs(110) substrates. For the MQW on a 2°-misoriented GaAs(110), formation of wide (110) step terraces due to step bunching was observed. Measurements of the temperature dependence of the electron spin relaxation time τs showed that the D’yakonov-Perel’ (DP) spin relaxation was suppressed even in the MQW on the 2°-misoriented GaAs(110) owing to the step terrace formation. In contrast, in the MQW on a 5°-misoriented GaAs(110), in which the surface showed ripple patterns, the τs became shorter than that on the on-axis GaAs(110), which we attribute to the enhanced electron spin relaxation originating from the bulk inversion asymmetry term in the DP mechanism that is induced by the substrate misorientation.

The role of electron-electron scattering in spin transport

We investigate spin transport in quasi two dimensional electron gas formed by III-V semiconductor heterojunctions using the Monte Carlo method. The results obtained with and without electron-electron scattering are compared and appreciable difference between the two is found. The electron-electron scattering leads to suppression of Dyakonov–Perel mechanism (DP) and enhancement of Elliott–Yafet mechanism (EY). Finally, spin transport in InSb and GaAs heterostructures is investigated considering both DP and EY mechanisms. While DP mechanism dominates spin decoherence in GaAs, EY mechanism is found to dominate in high mobility InSb. Our simulations predict a lower spin relaxation/decoherence rate in wide gap semiconductors which is desirable for spin transport.

Electron spin relaxation in p-type GaAs quantum wells

We investigate electron spin relaxation in p-type GaAs quantum wells from a fully microscopic kinetic spin Bloch equation approach, with all the relevant scatterings, such as electron–impurity, electron–phonon, electron–electron Coulomb, electron–hole Coulomb and electron–hole exchange (the Bir–Aronov–Pikus (BAP) mechanism) scatterings, explicitly included. Via this approach, we examine the relative importance of the D'yakonov–Perel' (DP) and BAP mechanisms in wide ranges of temperature, hole density, excitation density and impurity density, and present a phase-diagram-like picture showing the parameter regime where the DP or BAP mechanism is more important. It is discovered that in the impurity-free case the temperature regime where the BAP mechanism is more efficient than the DP one is around the hole Fermi temperature for high hole density, regardless of excitation density. However, in the high impurity density case with the impurity density identical to the hole density, this regime is roughly from the electron Fermi temperature to the hole Fermi temperature. Moreover, we predict that for the impurity-free case, in the regime where the DP mechanism dominates the spin relaxation at all temperatures, the temperature dependence of the spin relaxation time (SRT) presents a peak around the hole Fermi temperature, which originates from the electron–hole Coulomb scattering. We also predict that at low temperature, the hole-density dependence of the electron SRT exhibits a double-peak structure in the impurity-free case, whereas it shows first a peak and then a valley in the case of identical impurity and hole densities. These intriguing behaviors are due to the contribution from holes in high subbands.

Electron spin relaxation in paramagnetic Ga(Mn)As quantum wells

Electron spin relaxation in paramagnetic Ga(Mn)As quantum wells is studied via the fully microscopic kinetic spin Bloch equation approach where all the scatterings, such as the electron-impurity, electron-phonon, electron-electron Coulomb, electron-hole Coulomb, electron-hole exchange (the Bir-Aronov-Pikus mechanism) and the $s\text{\ensuremath{-}}d$ exchange scatterings, are explicitly included. The Elliott-Yafet mechanism is also incorporated. From this approach, we study the spin relaxation in both $n$-type and $p$-type Ga(Mn)As quantum wells. For $n$-type Ga(Mn)As quantum wells, where most Mn ions take the interstitial positions, we find that the spin relaxation is always dominated by the D'yakonov-Perel' (DP) mechanism in the metallic region. Interestingly, the Mn concentration dependence of the spin relaxation time is nonmonotonic and exhibits a peak. This is due to the fact that the momentum scattering and the inhomogeneous broadening have different density dependences in the nondegenerate and degenerate regimes. For $p$-type Ga(Mn)As quantum wells, we find that the Mn concentration dependence of the spin relaxation time is also nonmonotonic and shows a peak. The cause of this behavior is that the $s\text{\ensuremath{-}}d$ exchange scattering (or the Bir-Aronov-Pikus) mechanism dominates the spin relaxation in the high Mn concentration regime at low (or high) temperature, whereas the DP mechanism determines the spin relaxation in the low Mn concentration regime. The Elliott-Yafet mechanism also contributes to the spin relaxation at intermediate temperatures. The spin relaxation time due to the DP mechanism increases with increasing Mn concentration due to motional narrowing, whereas those due to the spin-flip mechanisms decrease with it, which thus leads to the formation of the peak. The temperature, photoexcitation density, and magnetic field dependences of the spin relaxation time in $p$-type Ga(Mn)As quantum wells are investigated systematically with the underlying physics revealed. Our results are consistent with the recent experimental findings.

Acoustic charge and spin transport in GaAs quantum wires

AbstractOptical investigation of the transport of electrons and holes in GaAs quantum wires by surface acoustic waves shows that carriers can be efficiently transported over several tens of mm. Despite the efficient charge transport, the transport distances for photoexcited spins were found to be very short.These short spin transport lengths indicate that spin dephasing is not limited by spin motion (the DP mechanism) but rather by spin relaxation during momentum scattering. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Carrier spin relaxation in (Ga,Mn)As at room temperature

In this paper, the excitation energy density dependence of carrier spin relaxation is studied at room temperature for the as-grown and annealed (Ga,Mn)As samples using femtosecond time-resolved pump-probe Kerr spectroscopy. It is found that spin relaxation lifetime of electrons lengthens with increasing excitation energy density for both samples, and the annealed (Ga,Mn)As has shorter carrier recombination and electron spin relaxation lifetimes as well as larger Kerr rotation angle than the as-grown (Ga,Mn)As under the same excitation condition, which shows that DP mechanism is dominant in the spin relaxation process for (Ga,Mn)As at room temperature. The enhanced ultrafast Kerr effect in the annealed (Ga,Mn)As shows the potential application of the annealed (Ga,Mn)As in ultrafast all-optical spin switches, and also provides a further evidence for the p-d exchange mechanism of the ferromagnetic origin of (Ga,Mn)As.

Strong anisotropic spin dynamics in narrow n-InGaAs∕AlGaAs (110) quantum wells

Anisotropic spin dynamics of two-dimensional electrons in strained n-InGaAs∕AlGaAs (110) quantum wells (QWs) is investigated by a time-resolved Faraday rotation technique. Strong anisotropy of the relaxation time for the electron spins in parallel (τ‖) and perpendicular (τ⊥) to the QWs is observed (τ⊥∕τ‖∼60) at 150 K as a result of the enhanced D'yakonov–Perel' (DP) spin relaxation mechanism. At 5 K, an anisotropic feature of the spin relaxation time is also observed in the presence of in-plane magnetic field, suggesting that the DP mechanism is effective for low-temperature spin relaxation.

Temperature dependence of spin transport by dynamic quantum dots

Electron spins in an undoped quantum well are transported using dynamic quantum dots (DQDs) formed by the piezoelectric potential of surface acoustic waves. The temperature dependence of the coherence length of electron spins during transport is investigated using spatially resolved photoluminescence. For temperatures between 4.2 and 20 K, the spin coherence length, which is proportional to the spin coherence lifetime, remains constant at approximately 100 μ m. This results from the ability of the DQDs to confine the spins within a small area (1 μ m × 1 μ m to 2 μ m × 2 μ m) during transport and reduce the temperature dependence associated with D’yakonov-Perel’ (DP) spin scattering. At 30 K, the electron spin coherence length rapidly decreases as the DP mechanism becomes dominant because of the higher thermal velocity on the Fermi surface.

Rashba spin-orbit coupling and spin relaxation in silicon quantum wells

Silicon is a leading candidate material for spin-based devices, and two-dimensional electron gases (2DEGs) formed in silicon heterostructures have been proposed for both spin transport and quantum dot quantum computing applications. The key parameter for these applications is the spin relaxation time. Here we apply the theory of D'yakonov and Perel' (DP) to calculate the electron spin resonance linewidth of a silicon 2DEG due to structural inversion asymmetry for arbitrary static magnetic field direction at low temperatures. We estimate the Rashba spin-orbit coupling coefficient in silicon quantum wells and find the $T_{1}$ and $T_{2}$ times of the spins from this mechanism as a function of momentum scattering time, magnetic field, and device-specific parameters. We obtain agreement with existing data for the angular dependence of the relaxation times and show that the magnitudes are consistent with the DP mechanism. We suggest how to increase the relaxation times by appropriate device design.