Ion implanter manufacturers are providing high current batch systems consistent with the throughput demands of DRAM manufacturers as well as any manufacturers striving for the “lowest cost of ownership”. As beam currents increase above 20 mA in production, so do problems associated with the implant integrity; i.e., neutrals from collision with evolved gases from the resist, but also problems related to resist removal after the implant. This paper reviews simple, stable techniques useful for a wide variety of resist removal applications with emphasis on elimination or minimization of contamination or device damage during the resist removal process. Implants using As, B, P, BF 2 with high doses and various dose rates (beam currents up to 26 mA) were done on patterned 200 mm wafers. Using a downstream microwave plasma asher, the differences in ashing rates and resist removal of the two critical materials are compared for the various implant conditions. Special programs/recipes are selected to accommodate (a) the tough carbonized top layer of resist, and (b) the softer bulk resist at the bottom. The results of this joint effort, between a major implanter manufacturer and asher manufacturer, will help solve several potential or existing end user problems related to high dose implantation resist removal processes.