Structure, Characteristics, and the Application of Phosphorus Doped Hydrogenated Microcrystalline Silicon

Abstract

ABSTRACTThe microstructure, electrical, and optical properties of in situ phosphorus doped hydrogenated macrocrystalline silicon (μc-Si:H:P) films are strongly affected by deposition parameters and subsequent thermal processes. μc-Si:H:P films with thickness ranging Trom 200 to lOOOÅ have been deposited on Si and SiO2 substrates. The μc-Si:H:P film is best deposited at 200°C in terms of structure, and H and P content. In this film, microcrystallites arc embedded in an amorphous matrix and have a volume fraction of ≃85%. The band-gap of the film is 1.8 eV. In this paper, the materials and processing issues of μc-Si:H:P deposited in a parallel plate RF plasma and in a downstream RF plasma chemical deposition reactor have been studied using HRTEM, SIMS, electrical, and optical measurements.