Doping Level Research Articles

Enhancement of luminescence and thermal stability in Eu3+-doped K3Y(BO2)6 with Li+ and Na+ co-doping

Eu3+-doped and Li+/Na+ co-doped K3Y(BO2)6 (KYBO) phosphors were synthesized through a microwave-assisted sol–gel method, and their structural and photoluminescent (PL) characteristics were examined. X-ray diffraction (XRD) and Rietveld refinement confirm effective dopant incorporation and preservation of the crystalline structure. Fourier Transform Infrared (FTIR) spectroscopy indicates the maintenance of the borate structure, confirming the structural integrity of the phosphors upon doping. The addition of Li+ and Na+ co-dopants notably enhances luminescent efficiency and thermal stability, making these phosphors promising candidates for solid-state lighting (SSL) applications. PL analysis reveals strong red emission peaks at 612 nm, attributed to the 5Do → 7F2 transition of Eu3+ ions. The study indicates that electric dipole-quadrupole interactions are the primary mechanism for energy migration, with a critical distance of approximately 22.68 Å. This mechanism contributes to concentration quenching at higher doping levels. High temperature PL measurements indicated an activation energy of 0.1389 eV for thermal quenching in the Li+ co-doped sample. Additionally, the Na+ co-doped sample exhibited an abnormal thermal stability behavior, with an even higher activation energy of 0.2536 eV. This suggests that Na+ co-doping significantly enhances the thermal resilience of the phosphor, making it more suitable for high-power light-emitting applications that operate under extreme conditions. CIE chromaticity diagrams highlight the potential for optimizing Eu3+ doping levels, combined with Li+ and Na+ co-doping, to improve luminescent performance and thermal stability for advanced SSL applications.

Molecular dynamics simulation of friction in DLC films with different Cr doping levels

This study systematically investigates the impact of varying Cr doping levels on the friction properties of DLC films using molecular dynamics simulations. The results demonstrate that under identical friction velocities and load conditions, the friction force of DLC films significantly decreases when the Cr doping content reaches 16.5 %. High Cr doping levels lead to the formation of Cr atomic clusters at the interface, hindering contact and reducing the number of interface bonds. These clusters act as lubricants, filling the interface gaps and thereby reducing the friction force. Internal stress calculations indicate that Cr doping effectively reduces the average internal stress of DLC films. For DLC films with lower Cr doping levels, the friction force exhibits similar trends under different friction velocities, while films with higher Cr doping levels show a more pronounced response, with friction force increasing at higher velocities. Increasing the load significantly raises the friction force, especially for DLC films with higher Cr doping levels. Furthermore, high Cr doping levels under high loads lead to significant structural damage and adhesive wear. This study provides theoretical and technical references for optimizing the friction performance of DLC films.

Silver doping effect on the electrochromic performance of the WO3 thin films produced by thermal evaporation in vacuum

Ag doped WO3 thin films are successfully fabricated by thermal evaporation method in vacuum as precursor, and then annealed at 450 °C in nitrogen gases atmosphere. Cyclic voltammetry, repeating chronoamperometry, chronocolumetry and optical transmittance are recorded in 1 M LiClO4/propylene carbonate electrolyte. The color of the WO3 thin films changes from transparent to the blue under the applied potential of -1.8 and +1.9 V. XRD studies show that all the films have a polycrystalline structure of WO3. The molecular formation is also confirmed by Raman and X-Ray photoelectron spectroscopy (XPS). The EDS elemental mappings clearly confirm the homogeneous distribution of Ag, W and O elements into the WO3 network. From the optical studies, indirect band gap energy of the WO3 decreases as Ag doping level increases. The best coloration and bleaching times (2.33 and 1.25 s) are obtained for the Ag(2%):WO3 thin films, compared to the pure WO3 (3.79 and 1.96 s). The produced WO3 films exhibit high reversibility (39.6/69.1%), high coloration efficiency values (26.3/141.2 cm2/C), and good cycling stability. From the EIS measurements, the charge-transfer resistance is Ag(2%):WO3 < the pure WO3 < Ag(5%):WO3 < Ag(8%):WO3, which means that Ag(2%):WO3 has the biggest electrochemically active surface area. Electronic energy levels of the pure WO3 and the Ag:WO3 thin films are also given. From the Mott-Schottky studies, it is determined that the donor concentration of the materials is of the order of 1014-1015 cm−3. In the literature, there are very limited studies related to electrochromic thin films by thermal evaporation in vacuum. In this sense, the reported results in this study are promising for the electrochromic applications.

Numerical Modelling of Carrier Transport in Organic Field Effect Transistors

Background: Organic field effect transistors (OFETs), used in the fabrication of nanosensors, are one of the most promising devices in organic electronics because of their lightweight, flexibility, and low fabrication cost. However, the optimization of such OFETs is still in an early stage due to the minimal analytical and numerical models presented in the literature. Objective: This research presses to demonstrate a numerical carrier transport model based on the finite element method (FEM) to investigate the I-V characteristic of OFETs. Methods: Two various organic semiconductor materials have been included in the study, polyaniline and pentacene, where micro-scale, as well as nano-scale models have been presented. OFETs regarding channel length, dielectric thickness, and doping level impact have been studied. We nominated the threshold voltage, the on/off current ratio, the sub-threshold swing, and the field effect mobilities as the primary output evaluating parameters. Results: The numerical model has shown the criticality of the doping effect on tuning the device flowing drain current to exceed 300 μA saturation current, along with a threshold voltage of -0.1 V under a channel length of 30 nm. Conclusion: The study highlights the effectiveness of polyaniline over pentacene as nano-channel length OFET due to the boosted conductivity of polyaniline concerning pentacene.

Impedance Spectroscopy of Lanthanum-Doped (Pb0.75Ba0.25)(Zr0.70Ti0.30)O3 Ceramics

This study examines the effects of La3+ doping on (Pb0.75Ba0.25)(Zr0.70Ti0.30)O3(PBZT) ceramics, which were synthesized using the conventional solid-state reaction method. X-ray diffraction analysis confirmed that the PBZT structure, including PBZT doped with La3+ at concentrations x = 1 at.% and x = 2 at.%, exhibited a rhombohedral (R3c) space group, while higher doping levels of x = 3 at.% and x = 4 at.% led to a dominant cubic (Pm-3m) phase with approximately 30% of a remnant rhombohedral component. Scanning electron microscopy (SEM, JEOL JSM-7100F TTL LV, Jeol Ltd., Tokyo, Japan) and energy dispersive X-ray spectroscopy (EDS) were utilized to investigate the structure and morphology of these ceramics. The findings indicated that the chemical composition of the ceramic samples closely corresponded to the initial stoichiometry of the ceramic powder. An increase in the amount of lanthanum results in a decrease in the average grain size of the ceramics. The electrical properties were further evaluated using complex impedance spectroscopy (IS) over a range of temperatures and frequencies, as well as temperature dependence of DC conductivity. The similarity in the changes in activation energy for DC conductivity and grain boundary conductivity, caused by lanthanum ion modification, allows for the conclusion that grain boundaries are the primary microstructural element responsible for conductivity in these materials.

Amorphous Exsolution of Fe3O4 Nanoparticles in SrTiO3: A Path to High Activity and Stability in Photoelectrochemical Water‐Splitting

Exsolution creates metal nanoparticles embedded within perovskite oxide matrices, promoting optimal exposure, even distribution, and robust interactions with the perovskite structure. Fe3O4, an oxidized form of Fe, is an attractive catalyst for photoelectrochemical (PEC) water‐splitting due to its strong light absorption, excellent electrical conductivity, and chemical stability. However, exsolving Fe is challenging, often requiring harsh reduction conditions that can decompose the perovskite. Herein, hybrid composites are fabricated for PEC water‐splitting by reductively annealing a solution of SrTiO3 photoanode and Fe cocatalyst precursors. In situ transmission electron microscopy reveals uniform, high‐density Fe particles exsolving from amorphous SrTiO3 films, followed by film‐crystallization at elevated temperatures. This innovative process extracts entire Fe dopants while maintaining structural stability, even at doping levels exceeding 50%. Upon air exposure, the embedded Fe particles oxidize to Fe3O4, forming a Schottky junction and enhancing light absorption. These conditions yield a high activity of 5.10 mA cm−2 at 1.23 V versus reversible hydrogen electrode (an 11.86‐fold improvement over SrTiO3) from the 30% Fe‐doped SrTiO3, with excellent stability (97% retention) over 24 h. Theoretical calculations indicate that in the amorphous state, FeO bonds weaken while TiO bonds remain strong, promoting selective exsolution. The mechanisms driving amorphous exsolution versus crystal exsolution are elucidated.

Enhancing Superconductor Critical Temperature Prediction: A Novel Machine Learning Approach Integrating Dopant Recognition.

Doping plays a crucial role in determining the critical temperature (Tc) of superconductors, yet accurately predicting its effects remains a significant challenge. Here, we introduce a novel doping descriptor that captures the complex influence of dopants on superconductivity. By integrating the doping descriptor with elemental and physical features within a Mixture of Experts (MoE) model, we achieve a remarkable R2 of 0.962 for Tc prediction, surpassing all published prediction models. Our approach successfully identifies optimal doping levels in the Bi2-xPbxSr2Ca2-yCuyOz system, with predictions closely aligning with experimental results. Leveraging this model, we screen compounds from the Inorganic Crystal Structure Database and employ a generative approach to explore new doped superconductors. This process reveals 40 promising candidates for high Tc superconductivity among existing and hypothetical doped materials. By explicitly accounting for doping effects, our method offers a powerful tool for guiding the experimental discovery of new superconductors, potentially accelerating progress in high-temperature superconductivity research and opening new avenues for material design.

Defect-Enabled Superior Negative Thermal Quenching in Palmierite Ba9La(VO4)7:Eu3+ for WLED In Situ Temperature Measuring.

Negative thermal quenching (NTQ) of the phosphors is critically important for both scientific research and practical applications, but the design of efficient NTQ phosphors is still a challenging task. Herein, we report a new strategy for developing NTQ materials by cation-vacancy engineering. Specifically, a new color-tunable Ba9La1-x(VO4):xEu3+ (BLVO:xEu3+) phosphor with abundant intrinsic cation vacancy was developed, exhibiting superior NTQ behavior under 365 nm excitation. The NTQ performance can be modulated via adjusting Eu3+ doping levels, and the emission intensity of Eu3+ ions in the BLVO:0.20Eu3+ phosphor increased by 275% at 473 K compared to room temperature. Furthermore, the reported material emitting bright white light under 365 nm excitation was well-suited for use in white light-emitting diode (WLED) phosphor and fluorescent temperature sensors, exhibiting outstanding color-rendering index (90.1) in lighting and high sensitivity (Sa = 11.83% K-1, Sr = 2.33% K-1) in temperature detecting. Lastly, the operating temperature of WLED at different currents can be monitored and displayed in real time through emission spectroscopy. All of the results demonstrated that the designed NTQ BLVO:xEu3+ can be used as a single-phase white phosphor and optical thermometry. This work provides a fresh perspective for designing high-efficient NTQ phosphors and expands the application of phosphors in WLED in situ temperature detection.

TiO2 Catalysts Co-Modified with Bi, F, SnO2, and SiO2 for Photocatalytic Degradation of Rhodamine B Under Simulated Sunlight

The organic pollutants discharged from industrial wastewater have caused serious harm to human health. The efficient photocatalytic degradation of organic pollutants under sunlight shows promise for industrial applications and energy utilization. In this study, a modified TiO2 photocatalyst doped with bismuth (Bi) and fluorine (F) and composited with SnO2 and SiO2 was prepared, and its performance for the degradation of Rhodamine B (RhB) under simulated sunlight was evaluated. Through the optimization of the doping levels of Bi and F, as well as the ratio of SnO2 and SiO2 to TiO2, the optimal catalyst reached degradation efficiency of 100% for RhB within 20 min under simulated sunlight, with a first-order reaction rate constant of 0.291 min−1. This value was 15, 41, 6.5, and 3.3 times higher than those of TiO2/SnO2, Bi/TiO2, Bi-TiO2/SnO2, and F/Bi-TiO2/SnO2, respectively. The active species detection showed that h+ was the most crucial active species in the process. The role of Bi and F addition and SnO2-SiO2 compositing was investigated by characterization. Bi formed a chemical bonding with TiO2 by doping into TiO2. The absorbance intensity in the UV and visible light regions was improved by SnO2 and F modification. Composite with SiO2 led to a larger surface area that allowed for more RhB adsorption sites. These beneficial modifications greatly enhanced the photocatalytic activity of the catalyst.

Nd3+ induces three-dimensional hierarchical rosette-shaped Bi3O4Br to generate abundant oxygen vacancies for enhanced photocatalytic activity

Three-dimensional hierarchical rosette-shaped Bi3O4Br has been successfully prepared by a one-step hydrothermal method for the first time, in which the doping of Nd3+ into the matrix of Bi3O4Br induces abundant oxygen vacancies and triggers energy-band hybridization to produce new dopant levels, which can efficiently receive photo-excited electrons and inhibit the complexation of photogenerated carriers. Impressively, the doped energy levels act as “springboards” for photogenerated electron jumps, exacerbating the inhomogeneity of charge distribution and accelerating charge separation. In addition, the fine-tuning of Nd3+ improves the band structure and photocatalytic performance of Nd/Bi3O4Br. Notably, the unique 3D rosette-like Bi3O4Br could enhance the adsorption capacity of the catalyst and provide more opportunities for the introduction of Nd3+ to induce the generation of abundant oxygen vacancies. Both experimental and density functional theory (DFT) results reveal the synergistic effect of energy band hybridization and oxygen vacancies. In addition, comparative experiments showed that Nd/Bi3O4Br enhanced the maximum removal efficiency of heavy metal mercury by 29.66 % relative to Bi3O4Br under visible light. The present work reveals the reaction mechanism of photocatalytic oxidation for mercury removal, which provides a new direction for realizing energy conversion and environmental purification in the future.

Structural order and disorder within novel antiferromagnetic RCrxGa3-yGey and R4Cr1-xGa12-yGey intermetallic compounds (R = Tb, Dy)

Single crystals of intermetallic phases RCrxGa3−yGey (R = Tb, Dy; x = 0.19–0.23, y = 0–0.4) and R4Cr1−xGa12−yGey (R = Tb, Dy; x = 0–0.13, y = 3–4) were grown from Ga flux ensuring the absence of magnetic impurities. The X-ray diffraction experiments revealed that the compounds belong to the family of filled AuCu3-type gallides. The compounds are formed upon the insertion of Cr atoms into E6 octahedral voids (E = Ga/Ge), which can occur in either disordered (RCrxGa3-yGey) or ordered (R4Cr1-xGa12-yGey) fashion. The unique feature of the obtained compounds is the strong correlation between the level of Ge doping and the Cr concentration in the phases, which allows one to control both the structural and magnetic ordering. At low Ge concentration, the cubic RCrxGa3-yGey phases form, which then experience tetragonal distortion upon the increase in the Ge content, and the cubic R4Cr1-xGa12-yGey 2×2×2 superstructures are formed at even higher Ge concentrations. The X-ray diffraction analysis also showed a presence of structural defects in the phases, which are caused by different size of empty E6 and filled CrE6 octahedra. Magnetic measurements of the single crystals of the cubic phases reveal antiferromagnetic ordering of the rare earth sublattice with the Neel temperatures decreasing upon Ge doping from 22 K for RCrxGa3 to 10 K for R4Cr1−xGa12−yGey. The Ge doping causes gradual decrease in the strength of antiferromagnetic R-R interactions ultimately leading to noncollinear magnetic structure in the superstructure R4Cr1−xGa12−yGey phases.

High-temperature transport properties of a two-dimensional weakly doped parabolic semiconductor

A version of the Mexican-hat Hamiltonian is used to study high-temperature transport properties of a two-dimensional weakly doped semiconductor with electron-hole symmetric bands. For a finite doping level and a temperature-dependent band gap, we find a closed analytical form of the temperature-dependent chemical potential. The effective concentrations of charge carriers participating in transport coefficients are analyzed in the space spanned by the total electron concentration and temperature. It is shown that these concentrations are the sum of a residual contribution and two thermally activated contributions, with a complicated dependence on temperature. The analytical expression for the Hall coefficient RHis also found. It is argued that it is a non-monotonic function of the doping level with the maximum at the doping nmax that is a linear function of temperature at high enough temperatures. The analysis of the real part of the interband conductivity shows that it is inversely proportional to incoming photon energy at low temperatures and that it is nearly constant over a wide energy range at high temperatures. This results are expected to be of significant importance in understanding transport and optical properties of weakly doped two-dimensional semiconductors with nearly symmetric parabolic bands.&#xD.

Nonlinear Thermoplasmonics in Graphene Nanostructures.

The linear electronic dispersion relation of graphene endows the atomically thin carbon layer with a large intrinsic optical nonlinearity, with regard to both parametric and photothermal processes. While plasmons in graphene nanostructures can further enhance nonlinear optical phenomena, boosting resonances to the technologically relevant mid- and near-infrared (IR) spectral regimes necessitates patterning on ∼10 nm length scales, for which quantum finite-size effects play a crucial role. Here we show that thermoplasmons in narrow graphene nanoribbons can be activated at mid- and near-IR frequencies with moderate absorbed energy density, and furthermore can drive substantial third-harmonic generation and optical Kerr nonlinearities. Our findings suggest that photothermal excitation by ultrashort optical pulses offers a promising approach to enable nonlinear plasmonic phenomena in nanostructured graphene that avoids potentially invasive electrical gating schemes and excessive charge carrier doping levels.

Doping-Induced Enhancement of Hydrogen Evolution at MoS2 Electrodes.

Rate theory and DFT calculations of hydrogen evolution reaction (HER) on MoS2 with Co, Ni and Pt impurities show the significance of dihydrogen (H2*) complex where both hydrogen atoms are interacting with the surface. Stabilization of such a complex affects the competing Volmer-Heyrovsky (direct H2 release) and Volmer-Tafel (H2* intermediate) pathways. The resulting evolution proceeds with a very small overpotential for all dopants ( =0.1 to 0.2 V) at 25 % edge substitution, significantly reduced from the already low =0.27 V for the undoped edge. At full edge substitution, Co-MoS2 remains highly active ( =0.18 V) while Ni- and Pt-MoS2 are deactivated ( =0.4 to 0.5 V) due to unfavorable interaction with H2*. Instead of the single S-vacancy, the site of intrinsic activity in the basal plane was found to be the undercoordinated central Mo-atom in threefold S-vacancy configurations, enabling hydrogen evolution with =0.52 V via a H2* intermediate. The impurity atoms interact favorably with the intrinsic sulfur vacancies on the basal plane, stabilizing but simultaneously deactivating the triple vacancy configuration. The calculated shifts in overpotential are consistent with reported measurements, and the dependence on doping level may explain variations in experimental observations.

Effect of Cr3+ doping concentration on the microstructure, mechanical properties and optical properties of Cr3+: SrF2 transparent ceramics

Cr3+: SrF2 nanopowders were synthesized using a chemical co-precipitation method. The nanoparticles exhibited a structure consistent with the pure SrF2 phase. Cr3+: SrF2 transparent ceramics were fabricated by hot-pressed (HP) sintering technique. The transmittance of 1 at% Cr3+: SrF2 transparent ceramics reached up to 83 % at 1054 nm, which is superior to other SrF2 transparent ceramics with different Cr3+ doping concentration. Furthermore, the mechanical properties of Cr3+: SrF2 transparent ceramics improved with increasing Cr3+ doping levels. The 1 at% Cr3+: SrF2 transparent ceramics exhibited the best mechanical properties, with a microhardness of 2.573 GPa, fracture toughness of 0.70 MPa·m1/2, and compressive strength of 38.1 MPa. The luminescence spectra and fluorescence lifetimes of the SrF2 transparent ceramics as a function of Cr3+ doping concentration were also analyzed and discussed.

UV and blue light cut-off filters using phosphorus doped carbon quantum dots extracted from raw egg yolk

Abstract Using raw egg yolk and phosphoric acid, a simple hydrothermal treatment for synthesizing carbon quantum dots (CQDs) has been developed for the manufacture of UV and blue light-blocking filters. Several samples with different doping ratios of phosphoric acid were prepared. Namely: reference (REF.), 25%, 50%, 75% and 100%. The synthesized CQDs were embedded in polyvinyl alcohol (PVA) to produce blocking-light films with desired optical properties. Six films were prepared, one of which was PVA alone, and the other five samples were the prepared CQDs, with different phosphorus doping levels, mixed with PVA in a 1:1 ratio. We aimed to test the ability of these films to block ultraviolet rays and blue light. The experimental results revealed that the prepared films were able to block the blue light, emitted from a 450 nm blue LED, with blocking ratios of 7%, 17.5%, 27%, 30%, 37% and 70% for the films: PVA alone, REF., 25%, 50%, 75% and 100%, respectively. Moreover, it was found that these phosphorus-doped CQDs films can prevent destructive UV light with substantial value reaching 86%. These results suggest that carbon dots, derived from raw egg yolk, can be effectively applied to block harmful UV and blue lights.

High Efficiency n-Type Doping of Organic Semiconductors by Cation Exchange.

Achieving efficient doping in n-type conjugated polymers is crucial for their application in electronic devices. In this study, an n-type doping method is developed based on cation exchange that maintains a high doping level while ensuring a high degree of structural order, leading to significantly improved electrical conductivity. By investigating various dopants and ionic liquids, it is discovered that the choice of dopant influences doping efficiency, while the selection of ionic liquid affects cation exchange efficiency. Through careful selection of suitable dopants and ionic liquids, High doping levels are achieved remarkably in a short period, resulting in the highest conductivity (nearly 1×10- 2Scm-¹) compared to other doping methods for poly{[N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)} (N2200). The findings highlight the robustness and efficiency of cation exchange doping as an effective approach for achieving high-quality n-type doping in conjugated polymers, thereby opening new avenues for the development of advanced polymer-based electronic devices.

Sulfur-doped enhanced ZnMn2O4 spinel for high-capacity zinc-ion batteries: Facilitating charge transfer

ZnMn2O4 spinel is considered a promising cathode material for zinc-ion batteries due to its superior Zn2+ storage capability. However, the widespread utilization of ZnMn2O4 spinel as a high-capacity cathode material is impeded by its insufficient electrical conductivity. To tackle this limitation, we have employed a sulfur doping approach by substituting sulfur for oxygen atoms within the ZnMn2O4 lattice structure. After theoretical calculation, the charge exchange between metal Zn/Mn and surrounding coordinated atoms is enhanced after sulfur doping. The sulfur-doped ZnMn2O4 spinel effectively enhances the electrical conductivity, improving its electrochemical discharge capacity. Furthermore, the results reveals that a doping level of 20 % provided the greatest enhancement in capacitance, achieving a specific capacity of 220.1 mAh/g. This work improves the disadvantages of ZnMn2O4 at the atomic level and can provide ideas for the optimization and modification of spinel cathode materials.

White Light Emission in Zero-Dimensional Indium Hybrid with Hydrogen Bond.

Low-dimensional organic-inorganic metal halides (OIMHs) have been explored as single-component white light emitters for applications in solid-state lighting. Herein, we report a zero-dimensional (0D) In-based OIMH (TMPDA)[InCl5(H2O)] (TMPDA = N,N,N',N'-tetramethyl-1,4-phenylenediamine), which crystallizes in the noncentrosymmetric P212121 space group and contains hydrogen bonds between the adjacent [InCl5(H2O)]2- octahedra in structure. It exhibits a large optical band gap (4.10 eV) and dual-band emission under UV light. Spectroscopic analysis and theoretical calculation indicate that the high (404 nm)- and low (513 nm)-energy emissions are attributed to the bound excitons in organic ligands and self-trapped excitons in [InCl5(H2O)]2- units, respectively. It is found that Sb doping in this 0D hybrid provides additional orange (590 nm) emission assigned to the 3P1 → 1S0 triplet radiative recombination. By adjusting the doping level, the emission color can be turned from turquoise to orange, and interestingly, a single-component white-light emission is realized by balancing the high-energy emission from organic ligand, the turquoise emission from [InCl5(H2O)]2-, and the orange one from [SbCl5(H2O)]2-. This work not only provides a new OIMH showing the single-component white light emission but also demonstrates the potential of In-based hybrids with hydrogen bonds for solid-state luminescence.

Enhanced Thermoelectric Performance of Bi0.5Sb1.5Te3 through Precise Pb Doping: Analysis Using the Single Parabolic Band Model

This study investigates the thermoelectric properties of Pb-doped p-type Bi0.5Sb1.5Te3 alloys using the Single Parabolic Band (SPB) model, focusing on optimizing room-temperature performance. We systematically analyze the effects of Pb doping (0, 0.49, 0.65, 0.81, 0.97, and 1.3 at%) on key parameters including density-of-states effective mass (md *), non-degenerate mobility (μ0), weighted mobility (μw), and the thermoelectric quality factor (B-factor) at 323 K. The results reveal that md * reaches a maximum of 1.37 me at 0.97 at% Pb doping, representing a 22.25 % increase over the pristine sample. The highest μ0 of 234.5 cm2 V-1 s-1 is achieved at 0.65 at% Pb, highlighting the complex relationship between doping and carrier mobility. Notably, 0.97 at% Pb doping optimizes thermoelectric performance, yielding the highest μw, power factor, and B-factor. This composition also minimizes lattice thermal conductivity (k1) by 44.93 % compared to the undoped sample, significantly reducing phonon heat conduction. The Callaway-von Baeyer model corroborates these findings, indicating maximized point defect scattering at 0.97 at% Pb. A theoretical peak figure-of-merit (zT) of 1.74 is thus predicted at this doping level, demonstrating a possible substantial enhancement in thermoelectric efficiency upon appropriate carrier concentration tuning. The observed trends in Seebeck coefficient, Hall carrier concentration, and Hall mobility with increasing Pb content provide insights into the underlying mechanisms of performance enhancement. This comprehensive study highlights the critical role of precise Pb doping in optimizing the thermoelectric properties of Bi0.5Sb1.5Te3 alloys for room-temperature applications and establishes a framework for future investigations into similar material systems.