Abstract
Abstract This study explores how gallium nitride (GaN) surface polarity affects the optical properties and surface potential of MoS2. Using Raman spectroscopy, photoluminescence, and Kelvin force microscopy (KFM), significant electron doping (~1014 cm-2) was observed in MoS2 on N-face GaN compared to Ga-face. PL spectra and the small contact potential difference of ~30 mV measured by KFM provided evidence for polarity-dependent different doping levels. Additionally, KFM measurements also suggested a small band bending difference between Ga- and N-face GaN, likely due to interactions at the GaN/MoS2 interface. This heavy doping contributes to the improved valley polarization of N-face GaN.
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