Abstract In order to increase the photoconductivity of n-type semiconductors, we made a particular study of TSe2 ( T ≡ Mo, W ) transition dichalcogenides. Niobium- and rhenium-doped single crystals were obtained by chemical vapour transport from a 1% polycrystalline metal-doped solution, using iodine in the case of MoSe2, and SeCl4 in the case of WSe2, as transport agents. The best results were obtained for doped MoSe2 crystals. In the Mo 1−x Re x Se 2 phase, it is possible, when x = 6 × 10 −5 , to increase the photocurrent gain by a factor of 10 without any applied voltage, the electrical conductivity being at a maximum. The best saturation current was obtained for Mo 1−x Re x Se 2 when x = 1 × 10 −4 , reaching 550 A m−2. This value is the highest ever found among transition dichalcogenides.
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