Design of logic devices has been scaled down up to several nm (i.e., 5, 4, 3, 2, and 1.8 nm). This scale-down has accompanied a rapid scale-down of the Cu-line width, increasing Cu-line pattern density. The Cu-line formation essentially requires Cu-film CMP, producing the detrimental defects such as dishing, erosion, and edge over erosion (E.O.E) after Cu-film CMP. Particularly, erosion and E.O.E intensively depend on the Cu-line width, and Cu-line pattern density, degrading device operating speed and yield. However, erosion and E.O.E have not been reported clearly.In this study, unlike conventional Cu-film CMP slurries, for achieving erosion- and E.O.E-less in nanoscale Cu-line pattern CMP, 1-step Cu-line CMP process was designed using a Cu bulk CMP slurry performing remarkably high polishing-rate via surface chemical oxidation layer formation using halide oxidant (i.e., H5IO6) and a Cu barrier-metal (BM) slurry conducting hindrance layer formation using inhibitor (i.e., BTA). Using designed Cu bulk and BM slurries with 100-nm-diameter colloidal silica abrasives could achieve erosion-less for the Cu-line pattern density of 5 ~ 55%, but a high amount of E.O.E remained for all Cu-line pattern density after CMP, as shown in Fig. 1. Thus, the dependencies of erosion and EOE on polishing-rate selectivity between Cu- and Isolation-films were investigated for achieving both erosion- and EOE-less. In our presentation, we will prove the mechanism of the selectivity on Cu- and Isolation-film. In addition, we will present the dependencies of the chemical dominant polishing properties (i.e., OH radical, chemical oxidation degree of the Cu- and Isolation-film surface, chemical composition of chemical oxidation, slurry absorption degree, and corrosion potential and current) as well as the mechanical dominant polishing properties (i.e., electrostatic force between abrasives and Cu- and Isolation-film surface) on the inhibitor concentration. Acknowledgment This research was supported by the MOTIE(Ministry of Trade, Industry & Energy (1415180388) and KSRC(Korea Semiconductor Research Consortium) (20019474) support program for the development of the future semiconductor device, and by the Brain Korea 21 PLUS Program and the Samsung Electronics’ University R&D program. Figure 1
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