Dissolution Process Of Silicon Research Articles

Finite Element Modeling of Silicon Transport into Germanium Using a Simplified Crystal Growth Technique

A numerical simulation study, using finite element method, was carried out to examine the temperature and concentration fields in the dissolution process of silicon into germanium melt. This work utilized a simplified configuration which may be considered to be similar material configuration to that used in the Vertical Bridgman growth methods. The concentration profile for the Si-Ge sample processed using this technique shows increasing transport silicon into the melt with time, moreover, a flat stable interface is observed. The mass and momentum equations for fluid flow, the energy and the solute mass transport were numerically solved. Results showed good agreements with experiments.

Growth and Dissolution Kinetics of Ultra Thin Silicon Films on Cu(100)

On Cu(100) surface, Auger electron spectroscopy (AES), Low Energy Electron Diffraction (LEED) and Scanning Tunnelling Microscopy (STM) were used to study (i) at room temperature (RT) the first steps of silicon growth and, (ii) at higher temperature, the dissolution process of silicon in Cu(100). The growth kinetics of Silicon onto Cu(100) at RT monitored by AES shows a quasi perfect layer-by-layer behaviour. After deposition at RT of about 5 silicon monolayers (ML), isochronal dissolution kinetics (rate of annealing of 1.5 degrees C/min) is recorded in a temperatures range [50-400 degrees C]. The slowdown observed in the kinetics dissolution for temperatures between 150 and 340 degrees C, reveals formation of an intermetallic superficial phase thermally stable in this range of temperature. LEED pattern and STM images show large domains of a rectangular (5 x 3) superstructure.

Dissolution process of silicon in an indium solution

In order to clarify the dissolution in the Earth's gravitational field, we examined the dissolution of silicon in an indium solution using a horizontal substrate-solution-substrate “sandwich” system under isothermal conditions. A remarkable difference was observed between upper and lower substrates. We will discuss the effect of the surface reaction and the solutal convection on the dissolution and the flatness of the substrate surface. A numerical description of the dissolution process is given. Calculated results show that the pbserved phenomena can be explained on the basis of the solutal convection model with consideration of the surface reaction.