Growth and Dissolution Kinetics of Ultra Thin Silicon Films on Cu(100)

Abstract

On Cu(100) surface, Auger electron spectroscopy (AES), Low Energy Electron Diffraction (LEED) and Scanning Tunnelling Microscopy (STM) were used to study (i) at room temperature (RT) the first steps of silicon growth and, (ii) at higher temperature, the dissolution process of silicon in Cu(100). The growth kinetics of Silicon onto Cu(100) at RT monitored by AES shows a quasi perfect layer-by-layer behaviour. After deposition at RT of about 5 silicon monolayers (ML), isochronal dissolution kinetics (rate of annealing of 1.5 degrees C/min) is recorded in a temperatures range [50-400 degrees C]. The slowdown observed in the kinetics dissolution for temperatures between 150 and 340 degrees C, reveals formation of an intermetallic superficial phase thermally stable in this range of temperature. LEED pattern and STM images show large domains of a rectangular (5 x 3) superstructure.