Disorder-free Localization Research Articles

Flat-band many-body localization and ergodicity breaking in the Creutz ladder

We study disorder-free many-body localization in the flat-band Creutz ladder, which was recently realized in cold-atoms in an optical lattice. In a non-interacting case, the flat-band structure of the system leads to a Wannier wavefunction localized on four adjacent lattice sites. In the flat-band regime both with and without interactions, the level spacing analysis exhibits Poisson-like distribution indicating the existence of disorder-free localization. Calculations of the inverse participation ratio support this observation. Interestingly, this type of localization is robust to weak disorders, whereas for strong disorders, the system exhibits a crossover into the conventional disorder-induced many-body localizated phase. Physical picture of this crossover is investigated in detail. We also observe non-ergodic dynamics in the flat-band regime without disorder. The memory of an initial density wave pattern is preserved for long times.

Logarithmic Spreading of Out-of-Time-Ordered Correlators without Many-Body Localization.

Out-of-time-ordered correlators (OTOCs) describe information scrambling under unitary time evolution, and provide a useful probe of the emergence of quantum chaos. Here we calculate OTOCs for a model of disorder-free localization whose exact solubility allows us to study long-time behavior in large systems. Remarkably, we observe logarithmic spreading of correlations, qualitatively different to both thermalizing and Anderson localized systems. Rather, such behavior is normally taken as a signature of many-body localization, so that our findings for an essentially noninteracting model are surprising. We provide an explanation for this unusual behavior, and suggest a novel Loschmidt echo protocol as a probe of correlation spreading. We show that the logarithmic spreading of correlations probed by this protocol is a generic feature of localized systems, with or without interactions.

Disorder-free localization around the conduction band edge of crossing and kinked silicon nanowires

We explore ballistic regime quantum transport characteristics of oxide-embedded crossing and kinked silicon nanowires (NWs) within a large-scale empirical pseudopotential electronic structure framework, coupled to the Kubo-Greenwood transport analysis. A real-space wave function study is undertaken and the outcomes are interpreted together with the findings of ballistic transport calculations. This reveals that ballistic transport edge lies tens to hundreds of millielectron volts above the lowest unoccupied molecular orbital, with a substantial number of localized states appearing in between, as well as above the former. We show that these localized states are not due to the oxide interface, but rather core silicon-derived. They manifest the wave nature of electrons brought to foreground by the reflections originating from NW junctions and bends. Hence, we show that the crossings and kinks of even ultraclean Si NWs possess a conduction band tail without a recourse to atomistic disorder.