In this letter, we are reporting on the characterization of the on-chip metal–oxide–metal (MOM) capacitors that use “self-inductance cancellation” technique resulting in high-performance operation in radio frequency (RF)/millimeter-wave (mm-wave) regime. The utilized method helps mitigate the mutual magnetic induction between the metal fingers of a MOM capacitor while they are placed in proximity to each other, by controlling the direction of the RF current flow. More than two times inductance cancellation is achieved, thus resulting in an increase of the self-resonance frequency and quality factor ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$Q$ </tex-math></inline-formula> -factor) of the RF capacitor. The test structures are fabricated using Intel 16 FinFET technology, where postsilicon data show a good agreement between the theory and simulation. This methodology is CMOS compatible and is applicable to RF/mm-wave circuits that employ RF capacitors toward improving the RF system performance.
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