Self-aligned channel regions in thin-film transistors (TFTs) have advantages in reduced parasitic capacitance and stage delay, and a reduction in overhead real estate. A common method used to fabricate self-aligned a-Si:H TFTs is to utilize a through-glass exposure of photoresist which is blocked by the opaque metal bottom-gate electrode. This process does not require an additional photomask or lithographic alignment, and thus supports low production cost. Sputtered IGZO has been introduced into flat panel display product manufacturing, exhibiting a channel mobility of approximately an order of magnitude higher than a-Si:H. The working source/drain electrodes in IGZO TFTs can be direct metal contact regions to the IGZO, without the need for additional processes such as doping to render the IGZO conductive. Proper metallurgy and annealing processes can provide ohmic behavior with minimal series resistance, however this usually requires several microns of gate-to-source/drain overlap to ensure such behavior.This work provides an interpretation of donor activation in self-aligned bottom-gate IGZO TFTs with ion-implantation of boron (11B+) species as the source/drain treatment. Passivated staggered bottom gate devices were fabricated with a sputtered 50 nm IGZO channel layer. Following standard passivation processes, devices were implanted adjacent to channel regions with boron doses of 1, 2, and 4×1015 cm-2 at an energy of 35 keV. Utilizing this anneal-implant sequence resulted in self-aligned devices with transfer characteristics comparable to non-self-aligned TFTs.Upon comparing linear mode device characteristics (Vds = 0.1 V) between the different treatments, a dose dependence was observed. Transfer characteristics appeared similar with a boron dose of 1 and 2×1015 cm-2 however, a 45% decrease in max current was observed for devices implanted with a 4×1015 cm-2 dose. From Van der Pauw measurements, a similar trend was observed; an increase in boron dose resulted in an increase in sheet resistance. A left shift in transfer characteristics was observed following thermal stress at 175 °C which is hypothesized to be the result of an interstitial boron species that remains mobile and provides a relatively low dose throughout the channel during and after thermal stress. An increased boron dose is hypothesized to result in a greater concentration of interstitial boron resulting in a greater degree of transfer characteristic shifting following thermal stress. An alternative hypothesis involves the possibility of hydrogen contamination during the implant process. The results of the investigation on the source of instability will be presented. Figure 1
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