Direct Current Magnetron Sputtering Research Articles

Design and fabrication of a lightweight 3D first surface mirror aluminized by DC magnetron sputtering

Aluminum thin films were deposited on a 3D prototype employing the direct current magnetron sputtering technique to fabricate a lightweight 3D first surface mirror. Before the aluminizing, the surface of the prototypes was evaluated with interferometry and atomic force microscope (AFM). The thin films were characterized using profilometry, UV-Vis spectroscopy, x-ray diffraction, AFM, x-ray photoelectron spectroscopy (XPS), and scanning electron microscopy. High adherence and homogeneous deposition of the aluminum’s thin films were achieved. In addition, the purity of the material was confirmed by XPS analysis.

Effect of Substrate Bias on the Microstructure and Properties of Non-Equimolar (AlCrSiTiZr)N Films with Different Cr/Zr Ratios Deposited Using Reactive Direct Current Magnetron Sputtering

To reduce the cost of tools operated in extreme environments, we developed films with excellent corrosion/oxidation resistance. Two high-entropy nitride films, (AlCrSi0.3TiZr)N and (AlCr1.5Si0.3TiZr0.5)N, were deposited using reactive DC magnetron sputtering under different substrate biases. The films exhibited a maximum hardness of 32.5 GPa ((AlCrSi0.3TiZr)N) and 35.3 GPa ((AlCr1.5Si0.3TiZr0.5)N) when deposited at −150 V, corresponding to 27 and 142% increases compared to those deposited at 0 V. This indicates that the bias strengthened (AlCr1.5Si0.3TiZr0.5)N (higher Cr/Zr ratio) more significantly. The enhancement of the mechanical properties was highly correlated with the interstitial point defects and densification of the film microstructures. The corrosion resistance of the films deposited on 6061 Al alloy substrate under different biases was tested in 0.1 M H2SO4. (AlCrSi0.3TiZr)N and (AlCr1.5Si0.3TiZr0.5)N displayed the lowest corrosion currents of 0.75 and 0.19 μA/cm2 when deposited at −100 and −150 V, respectively. These values are two orders of magnitude lower than that of the uncoated substrate. The (AlCr1.5Si0.3TiZr0.5)N film showed better oxidation resistance than the (AlCrSi0.3TiZr)N film and remained partially oxidized after heat treatment at 1000 °C. The (AlCr1.5Si0.3TiZr0.5)N film deposited at −150 V exhibits excellent mechanical properties and corrosion/oxidation resistances, making it suitable for protecting tools operating in harsh environments.

Growth of Nb films on Cu for superconducting radio frequency cavities by direct current and high power impulse magnetron sputtering: A molecular dynamics and experimental study

The use of superconducting radio frequency (rf) cavities in particle accelerators necessitates that copper (Cu) surfaces are coated by thin niobium (Nb) films, predominantly synthesized by magnetron sputtering. A key feature of the rf cavities is that they exhibit a complex three-dimensional geometry, such that during Nb film growth vapor is not deposited on a flat substrate. The latter, combined with the line-of-sight nature of the deposition flux in conventional magnetron sputtering methods (including direct current magnetron sputtering; DCMS) yields films with porous columnar morphologies on surfaces of the cavities that do not face the magnetron source. High-power impulse magnetron sputtering (HiPIMS) is a variant of sputtering that generates highly-ionized fluxes. Using electrical fields, such fluxes can be deflected to trajectories that are closer to the substrate normal and, thereby, dense and uniform layers can be deposited on all surfaces of the rf cavities. In the present work, we use classical molecular dynamics simulations to model Nb film growth on Cu substrates at conditions consistent with those prevailing during DCMS and HiPIMS. Our computational results are in qualitative agreement with experimental data (also generated in the present study), with respect to film morphology. Based on this agreement and by studying the evolution of the simulated systems, we suggest that the morphology of HiPIMS-grown films (as compared to their DCMS counterparts) is the result of the combined effects of deflection of ionized sputtered particles to trajectories parallel to the substrate normal, bombardment-induced interruption of crystal growth, and ballistic atomic rearrangement along with dynamic thermal annealing caused by energetic film-forming species. Moreover, the predictions of our model with respect to dynamic processes at the film-substrate interface and their effect on local epitaxial growth are discussed.

Effect of Si contents on microstructure and mechanical characteristics of TiAlSiN thin film deposited by HiPIMS using different Ti[sbnd]Si target compositions

High Power Impulse Magnetron Sputtering (HiPIMS) PVD deposition technology offers smoother coating enhanced mechanical properties and improved substrate-coating adhesion and has become a superior alternative to direct current magnetron sputtering (DCMS). The technology utilizes high peak power with a small pulse duration, leading to a much denser plasma in the order of 1018 m−3. This results in dense, defect-free, and high-quality smoother coatings. In this study, TiAlSiN coatings were deposited on WC-10Co (wt%) cermet using HiPIMS technology with two different TiSi contents. A pair of TiSi targets, either of compositions Ti77Si23 or of Ti66Si34, were used during the depositions along with another pair of Ti40Al60, in successive cathode-stages. The impact of Ti and Si atomic percentages on the microstructure and mechanical properties of the coatings was investigated using various techniques, including X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), 3D-surface profiling, nano-indentation, Rockwell indentation-adhesion, and scratch test. The coating's thickness and deposition rate were estimated from the cross-section morphology. The results suggested that the TiAlN phase likely existed in an amorphous phase of Si3N4 in TiAlSiN coatings. As the Ti atomic percentage in the layer increased, the hardness improved, reaching up to 42 GPa (max). Additionally, the coating surface roughness decreased from 14.3 nm to 10.9 nm, and the grain size decreased from 10 nm to 9 nm. The adhesion strength observed under the Rockwell-indentation test was rated as HF1 in both cases. Furthermore, the indentation test revealed similar crack patterns, but an increase in Ti content significantly improved the coating-substrate adhesion, as confirmed by the Scratch test. The scratch test demonstrated a maximum load of 173 N during the complete delamination (Lc3) of TiAlSiN from the carbide substrate.

Improving the photoresponse of magnetron sputtered titania films by optimizing substrate and electrode configuration

Titania (TiO2) is a natural choice for photocatalysts and photodetectors due to its superior properties such as high stability and high photoelectric effect coupled with low cost fabrication routes. In this work we study the effect of substrate on the structural, morphological, and photoresponse behavior of sputtered titania thin films. We also compare the difference in photoresponse between parallel and series electrode configurations to understand the role of configuration on the design of photodetectors. TiO2 films of 50 nm thickness are sputtered onto three different substrates, namely quartz, fluorine-doped tin oxide (FTO), and silicon (Si) using direct current reactive magnetron sputtering. The structural and optical properties, along with photoresponse behavior, on these three different substrates are investigated. The sputtered TiO2 film crystallizes in the rutile structure with a uniform grain size distribution. Analysis of the transmittance data from UV–Vis spectra was used to derive the optical constants for the film. The sensitivity of TiO2 to photoresponse is highly dependent on the substrate. The response is better for Si substrate, when compared to FTO or quartz and this is due to the heterojunction formation at the TiO2/Si interface. Sensitivity, responsivity, and detectivity are also obtained for both parallel and series electrode configuration for Si substrate and better photoresponse is exhibited by the parallel configuration since carrier recombination in the bulk of the Si wafer is avoided. The photocurrent values in this work are an order of magnitude better than previous work on TiO2/Si, while the slightly slower response times maybe attributed to the strain-induced barrier reduction and band bending. Thus, this work showcases the tailoring of optoelectronic devices based on magnetron sputtered titania thin films by choosing appropriate substrates and electrode geometries.

Low friction and wear of Nitrogen-doped diamond-like carbon films deposited on NBR with different flows of N2 by DC-MS

Utilizing a diamond-like carbon (DLC) coating on rubber surfaces is an innovative approach to improve the wear resistance and tribological characteristics of rubber. In this paper, a series of N-doped diamond-like thin films (N-DLC) were deposited on the surface of nitrile butadiene rubber (NBR) substrate by varying the flow rate of nitrogen using direct current magnetron sputtering (DC-MS) technology, and the effects of nitrogen flow rate on the surface morphology, structure, surface energy and tribological properties of N-DLC films were systematically investigated. The results show that the friction coefficients of the N-DLC films are all smaller than those of the undoped DLC films, and most importantly, the samples maintain a stable, ultra-low coefficient of friction of about 0.057 and a low wear rate of the order of 10−9 in the tribological tests at a nitrogen flow rate of 3 sccm, exhibiting excellent tribological performance. This is attributed to several key factors: higher hardness, better film-base bonding, lower surface roughness, and lower friction interface adhesion. This recognition provides insight into the preparation of N-DLC films on rubber to achieve low frictional wear.

Effect of post-treated methods on corrosion resistance of MF-DC magnetron sputtering Al coating on TC4

PurposeThis study aims to investigate the effect of post-treatment on anti-corrosion performance of Al coating on the surface of Ti-6Al-4V (TC4) fastener.Design/methodology/approachThe Al coatings with different layer structures were prepared on TC4 by middle-frequency and direct-current combined magnetron sputtering. The cross-sectional morphology and surface roughness of coatings were characterized by scanning electron microscope and atomic force microscope. The corrosion resistance was evaluated by electrochemical method. The monolayer coating was post-treated by Alodine chemical conversion, Ar+ bombardment and a combination of two methods above.FindingsThe results show that the interfaces in bilayer and trilayer coatings reduce the defects. Ar+ bombardment reduces the corrosion current density, and Alodine chemical conversion leads to a higher pitting corrosion potential. The combined post-treatment has the highest polarization resistance.Originality/valueThe corrosion resistance of the Al coating is enhanced as the layer quantity increases. The combination of two post-treatments, Ar+ bombardment and Alodine chemical conversion, could achieve an overall improvement in corrosion resistance of Al coating.

Underlying Substrate Effect on Electrochemical Activity for Hydrogen Evolution Reaction with Low‐Platinum‐Loaded Catalysts

Platinum is known as the best catalyst for the hydrogen evolution reaction (HER) but the scarcity and high cost of Pt limit its widespread applicability. Herein, the role of the underlying substrate on the HER activity of dispersed Pt atoms is uncovered. A direct current magnetron sputtering technique is utilized to deposit transition metal (TM) thin films of W, Ti, and Ta as underlying substrates for extremely low loading of Pt (<1.5 at%). The electrocatalytic performance of as‐synthesized samples for the HER is examined in both alkali and acidic media. The results show that despite the low loading of Pt, the Pt/TM catalysts produce hydrogen at a rate comparable to that of pristine bulk Pt. Pt/TM catalysts also display good stability with less than 5% decay in performance after 10 h of continuous HER operation. Based on the computational study, the excellent performance is attributed to the modified electronic properties of the Pt atoms, offering ideal binding energy for HER due to interaction with the underlying substrates. This work provides a robust and industry‐friendly route toward designing efficient catalytic systems for important electrochemical reactions such as HER and others.

The microstructure and mechanical properties of He charged Al films fabricated by HiPIMS/DCMS co-sputtering

Although magnetron sputtering is an effective method to prepare helium (He) charged films, due to the shadowing effect and low plasma density, the films prepared by this method are high porosity and residual stress. In order to solve this problem, the microstructure and properties of He charged aluminum (Al) thin films deposited by the direct current magnetron sputtering (DCMS) and high power impulse magnetron sputtering (HiPIMS)/DCMS co-sputtering were investigated carefully. The results show that, even with the same concentration of He content, He charged film deposited by HiPIMS/DCMS show relatively lower hardness than that of He charged films by DCMS, which the difference is about 0.75 GPa. This is mainly because increased gain size and decreased the number of dislocation loops, due to strong migration ability on the growth surface in HiPIMS/DCMS process. A denser, less columnar structure of He charged film was prepared by the HiPIMS/DCMS co-sputtering, which might help to promote the research on the properties of metal materials containing He bubbles.

Surface morphology engineering of WO3 films for increasing Li ion insertion area in electrochromic supercapacitors (ECSCs)

Two different dry deposition methods were used to deposit electrode films with different surface morphologies in relation to the performance of electrochromic supercapacitors (ECSCs): direct current (DC) magnetron sputtering and the nanoparticle deposition system (NPDS). The NPDS method, which sprays powders onto the substrate using pressure differences, deposited WO3 film with its roughness of 36 nm and its thickness of 383 nm, while the sputtered WO3 film had its roughness of 3 nm and its thickness of 262 nm. Due to its dramatic difference in surface roughness, the NPDS-WO3 thin film had larger reaction surface area as well as Li-ion diffusion coefficient than those of sputtered-WO3 films. As a result, the ECSC device with NPDS-WO3 exhibited 19 % higher coloration efficiency with greater charge capacity compared to those with sputtered-WO3. However, the ECSC device with NPDS-WO3 showed different charge/discharge with trapped Li ions during the coloring(charging)/bleaching(discharge) processes respectively, leading to rapid degradation of the device. This research highlights the clear difference between its characteristics of the thin films fabricated using the NPDS vs. sputtering methods in relation to its surface roughness so that this study would be potentially beneficial in engineering various properties of ECSC devices.

Industrial application potential of high power impulse magnetron sputtering for wear and corrosion protection coatings

PVD technologies, including vacuum arc evaporation and DC-magnetron sputtering, have been utilized in industrial settings since the early 1980s for depositing protective coatings. These coatings encompass a range of materials such as metal nitrides, carbonitrides, oxides, oxynitrides, and DLC, serving diverse applications such as cutting and forming tools, automotive components, and decoration. Vacuum arc evaporation generates a highly energized and ionized particle flux toward the substrate, while “classical” gas-ion-dominated direct current magnetron sputtering (DCMS) has limitations in generating ionized and energetic species of the sputtered target material. The development of High-Power Impulse Magnetron Sputtering (HiPIMS) has exhibited significant potential in addressing DCMS's limitations by enabling the production of highly energetic particles. This innovation, with its industrial applicability for protective coatings, was introduced around 2010. This paper aims to provide an industrial perspective on HiPIMS, serving as a guide for scientists and engineers in comprehending and implementing HiPIMS solutions. It covers historical context and fundamental characteristics. Basic features as well as state-of-the-art configurations of PVD systems are also described. Graphical representations of experimental results illustrate HiPIMS features, including operational modes, deposition rate effects, thickness uniformity, and sustainability, particularly in terms of energy efficiency. The discussion focuses on the application prospects, advantages, and constraints of industrially applied HiPIMS protective coatings, emphasizing cutting and forming tools, within the context of the findings presented.

Influence of processing conditions on the titanium/nickel contact metallization on a silicon wafer for thermal management

Thermal management of both digital and power electronics is becoming challenging with device miniaturization and a need for delivering higher power. Diamond thin films and substrates are attractive for thermal management applications in power electronics because of their high thermal conductivity. However, deposition of diamond by microwave plasma enhanced chemical vapor deposition requires high temperatures, which can degrade metallization used in power electronic devices. In this research, Titanium (Ti)- Nickel (Ni) thin films are deposited by direct current magnetron sputtering on p-type Silicon (Si) (100) substrates using a physical mask for creating dot-patterns for measuring properties of the contact metallization. The influence of processing conditions and post-deposition annealing in Argon and hydrogen at 380 °C for 1 h on the properties of the contact metallization are studied by measuring the current - voltage characteristics and Hall effect. The results indicated ohmic contact resistance for both, the as-deposited films and after post annealing treatments. In addition, the results on contact resistance, resistivity, carrier concentration and hall mobility of wafers extracted from Ti/Ni metal contact to p-type Si (100) are presented and discussed.

Ag Nanocluster Production through DC Magnetron Sputtering and Inert Gas Condensation: A Study of Structural, Kelvin Probe Force Microscopy, and Optical Properties.

Silver nanoclusters are valuable for a variety of applications. A combination of direct current (DC) magnetron sputtering and inert gas condensation methods, employed within an ultra-high vacuum (UHV) system, was used to generate Ag nanoclusters with an average size of 4 nm. Various analytical techniques, including Scanning Probe Microscopy (SPM), X-ray Diffraction (XRD), Kelvin Probe Force Microscopy (KPFM), UV-visible absorption, and Photoluminescence, were employed to characterize the produced Ag nanoclusters. AFM topographic imaging revealed spherical nanoparticles with sizes ranging from 3 to 6 nm, corroborating data from a quadrupole mass filter (QMF). The XRD analysis verified the simple cubic structure of the Ag nanoclusters. The surface potential was assessed using KPFM, from which the work function was calculated with a reference highly ordered pyrolytic graphite (HOPG). The UV-visible absorption spectra displayed peaks within the 350-750 nm wavelength range, with a strong absorption feature at 475 nm. Additionally, lower excitation wavelengths resulted in a sharp peak emission at 370 nm, which became weaker and broader when higher excitation wavelengths were used.

One‐Step DcMS and HiPIMS Sputtered CIGS Films from a Quaternary Target

Using a quaternary compound target, Cu(In,Ga)Se2 films are prepared using one‐step, selenization‐free direct current magneton sputtering (DcMS) and high power impulse magnetron sputtering (HiPIMS) methods. This study investigates how the sputtering power affects the composition, microstructure, morphology, and electrical characteristics of the films. Film crystallinity is found to be affected by the sputtering power utilized. The films deposited at 0.25 kW are amorphous, whereas those formed at 0.5–1 kW display a chalcopyrite structure with a (112)–preferred orientation. With increased sputtering power, the films’ crystal quality improves, displaying a homogeneous and compact morphology free of peeling and cracking. Elemental measurement of the CIGS films reveals that, depending on the deposition method, the film composition deviates from that of the target. The electrical properties of the deposited films vary with increasing sputtering power.

Enhanced Diffuse Reflectance of Photons in Molybdenum Back Electrode Films Achieved via Surface Texturing for Thin Film Solar Cells

Molybdenum (Mo) thin film is widely used as the bottom electrode in substrate‐configured thin film solar cells due to its high conductivity and reflectivity. Mo grown onto microtextured substrates increases the diffuse reflection of incident photons via scattering/multiple reflections on the corner/edges, in addition to the contribution from increased surface area. Herein, bilayer Mo is grown using direct current magnetron sputtering onto plain and textured substrates. To texture the glass substrate surface, a periodic array of cross‐linked photoresist structures (SU‐8 2000.5 & SU‐8 2005) is introduced via UV‐lithography process. Characterizations are done using X‐ray diffractometer, optical microscope, scanning electron microscope, and optical profilometer. Angle‐dependent specular reflectance, diffuse reflectance, and electrical measurements done on Mo grown on plain and textured substrates lead to a comprehensive understanding of the advantages of growing Mo films on textured substrates. The electrical resistivity of Mo grown on plain and textured substrates is of the same order, measuring 3.09 × 10−5 Ω cm, 3.25 × 10−5 Ω cm, and 3.87 × 10−5 Ω cm, respectively. A high‐diffuse reflectance of 62.7% is obtained for SU‐8 2005 textured Mo films. Investigations using COMSOL simulations support the optical reflectance analysis.

Formation of thin films via cold-rolled/annealed nickel sputtering targets

Nickel (Ni) thin films are commonly used in the integrated circuit field. Magnetron sputtering is a common method for thin film deposition, and the sputtering target is the key raw material in the magnetron sputtering process. In this work, cold-rolled and annealed Ni targets were prepared. The microstructures and magnetic properties of the Ni targets were analyzed. Then, Ni films were prepared by direct current magnetron sputtering with the above two Ni targets. The Ni films were characterized by scanning electron microscopy, atomic force microscopy, grazing incidence x-ray diffraction, x-ray reflectivity, and four-probe testing. Finally, the surface morphologies of the targets were compared before and after sputtering, and the relationships between the Ni targets and the Ni films were discussed. The results show that with the same conditions, the annealed Ni target is more efficiently utilized, and the electrical properties of the Ni films are good when the film is macrostructurally smooth and microstructurally compact. This is due to the target texture, magnetic properties, etc.

Towards lowering energy consumption during magnetron sputtering: Benefits of high-mass metal ion irradiation

The quest for lowering energy consumption during thin film growth by magnetron sputtering techniques becomes of particular importance in view of sustainable development goals. As large fraction of the process energy is consumed in substrate heating for the purpose of providing high adatom mobility necessary to grow dense films, the most straightforward strategy toward more environment-friendly processing is to find alternatives to thermally activated surface diffusion. One possibility is offered by high mass metal ion irradiation of the growing film surface, which has been recently shown to be very effective in densification of transition metal nitride layers grown with no external heating, such that Zone 2 microstructures of the structure-zone model are obtained in the substrate temperature Ts range otherwise typical for Zone 1 growth. The large mass difference between the incident ion and the atoms constituting the film results in effective creation of low energy recoils, which leads to film densification at low Ts. Due to their high mass, metal ions become incorporated at lattice sites beyond the near-surface region of intense recoil generation leading to further densification, while preventing the buildup of residual stress. The practical implementation of this technique discussed in this Perspective employs heavy metal targets operating in the high-power impulse magnetron sputtering (HiPIMS) mode to provide periodic metal-ion fluxes that are accelerated in the electric field of the substrate to irradiate layers deposited from direct current magnetron sputtering (DCMS) sources. A key feature of this hybrid HiPIMS/DCMS configuration is the substrate bias that is synchronized with heavy metal ion fluxes for selective control of their energy and momentum. As a consequence, the major fraction of process energy is used at sputtering sources and for film densification, rather than for heating of the entire vacuum vessel. Model material systems include TiN and metastable NaCl-structure Ti1−yAlyN films, which are well-known for challenges in stoichiometry and phase stability control, respectively, and are of high relevance for industrial applications. This Perspective provides a comprehensive overview of the novel film growth method. After presenting basic concepts, time-resolved measurements of ion fluxes at the substrate plane, essential for selective control of metal ion energy and momentum, are discussed. The role of metal ion mass, energy, momentum, and concentration is described in more detail. As some applications require substrate rotation for conformal coating, a section is devoted to the related complexity in the implementation of metal-ion-synchronized growth under industrial conditions.

High-mass metal ion irradiation enables growth of high-entropy sublattice nitride thin films from elemental targets

Synthesis of high-entropy sublattice nitride (HESN) coatings by magnetron sputtering is typically done using custom-made alloyed targets with specific elemental compositions. This approach is expensive, requires long delivery times, and offers very limited flexibility to adjust the film composition. Here, we demonstrate a new method to grow HESN films, which relies on elemental targets arranged in the multicathode configuration with substrates rotating during deposition. TiVNbMoWN films are grown at a temperature of ∼520 °С using Ti, V, Nb, and Mo targets operating in the direct current magnetron sputtering mode, while the W target, operated by high power impulse magnetron sputtering (HiPIMS), provides a source of heavy ions. The energy of the metal ions EW+ is controlled in the range from 80 to 620 eV by varying the amplitude of the substrate bias pulses Vs, synchronized with the metal-ion-rich phase of HiPIMS pulses. We demonstrate that W+ irradiation provides dynamic recoil mixing of the film-forming components in the near-surface atomic layers. For EW+ ≥ 320 eV the multilayer formation phenomena, inherent for this deposition geometry, are suppressed and, hence, compositionally uniform HESN films are obtained, as confirmed by the microstructural and elemental analysis.

Oxidation resistance and mechanical properties of AlTiZrHfTa(-N) high entropy films deposited by reactive magnetron sputtering

(AlTiZrHfTa)1−xNx refractory high entropy films (RHEFs) were deposited by direct current magnetron sputtering in various nitrogen ratios (RN2 = N2/(Ar+N2)) on flat glass, silicon and sapphire substrates. The nitrogen-free film is amorphous while the nitrides are single-phased solid solutions with Face-Centered Cubic (FCC) structures. The hardness increases from 6.4 GPa for the nitrogen-free film to 25.3 GPa for the film obtained at RN2 = 20%. A preferred orientation from (111) to (200) occurs when RN2 increases from 5% to 50%. H/E and H3/H2 reports show high values for the film deposited at RN2 = 20% compared to that at 10%. However, this latter has the best compromise in terms of mechanical properties related to a lower residual stress value. The nitrides films obtained with RN2 ≥ 5%, are thermally stable at 800 °C for 3 h under vacuum. Compared to the metallic film they show an improved oxidation resistance. In fact, the Kp constant of the nitride (RN2=20%) is lower (1.22 10−7 g2 cm−4 h−1) than that of the nitrogen-free film (1.77 10−6 g2 cm−4 h−1). The corresponding activation energies (Ea) are respectively calculated at 94.8 KJ. mol−1 and 45.5 KJ.mol−1. After oxidation process, TEM analysis reveal the formation of homogeneous mixed oxide.

Phase Composition and Thermoelectric Properties of Epitaxial CrMoVN Thin Films

Thin films of CrMoVN are deposited on c‐plane sapphire (Al2O3 (0001)) by direct current reactive magnetron sputtering, to investigate the effects of Mo and V addition to CrN‐based films. All films grow epitaxially, but Mo incorporation affects the crystal structure and nitrogen content. All films in the CrMoVN series are understoichiometric in nitrogen, but largely retain the NaCl B1 structure of stoichiometric CrN films. Addition of vanadium increases the phase‐stability range of the cubic phase, allowing for higher solubility of Mo than what has previously been reported for cubic CrN. The Seebeck coefficient and electrical resistivity are greatly affected by the alloying, showing a decrease of the Seebeck coefficient along with a decrease in resistivity. Cr0.83Mo0.11V0.06Nz shows a 70% increase in power factor (S2σ = 0.22 mW m−1 K−2) compared to the reference CrNz (S2σ = 0.13 mW m−1 K−2).