Abstract
Thermal management of both digital and power electronics is becoming challenging with device miniaturization and a need for delivering higher power. Diamond thin films and substrates are attractive for thermal management applications in power electronics because of their high thermal conductivity. However, deposition of diamond by microwave plasma enhanced chemical vapor deposition requires high temperatures, which can degrade metallization used in power electronic devices. In this research, Titanium (Ti)- Nickel (Ni) thin films are deposited by direct current magnetron sputtering on p-type Silicon (Si) (100) substrates using a physical mask for creating dot-patterns for measuring properties of the contact metallization. The influence of processing conditions and post-deposition annealing in Argon and hydrogen at 380 °C for 1 h on the properties of the contact metallization are studied by measuring the current - voltage characteristics and Hall effect. The results indicated ohmic contact resistance for both, the as-deposited films and after post annealing treatments. In addition, the results on contact resistance, resistivity, carrier concentration and hall mobility of wafers extracted from Ti/Ni metal contact to p-type Si (100) are presented and discussed.
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