Direct Band Gap Semiconductor Research Articles

A systematic first-principles investigation of the structural, electronic, mechanical, optical, and thermodynamic properties of Half-Heusler ANiX (ASc, Ti, Y, Zr, Hf; XBi, Sn) for spintronics and optoelectronics applications.

This paper is the first to look at the structural, electronic, mechanical, optical, and thermodynamic properties of the ANiX (ASc, Ti, Y, Zr, Hf; XBi, Sn) half-Heusler (HH) using DFT based first principles method. The lattice parameters that we have calculated are very similar to those obtained in prior investigations with theoretical and experimental data. The positive phonon dispersion curve confirm the dynamical stability of ANiX (ASc, Ti, Y, Zr, Hf; XBi, Sn). The electronic band structure and DOS confirmed that the studied materials ANiX (ASc, Ti, Y, Zr, Hf; XBi, Sn) are direct band gap semiconductors. The investigation also determined significant constants, including dielectric function, absorption, conductivity, reflectivity, refractive index, and loss function. These optical observations unveiled our compounds potential utilization in various electronic and optoelectronic device applications. The elastic constants were used to fulfill the Born criteria, confirming the mechanical stability and ductility of the solids ANiX (ASc, Ti, Y, Zr, Hf; XBi, Sn). The calculated elastic modulus revealed that our studied compounds are elastically anisotropic. Moreover, ANiX (ASc, Ti, Y, Zr, Hf; XBi, Sn) has a very low minimum thermal conductivity (Kmin), and a low Debye temperature (θD), which indicating their appropriateness for utilization in thermal barrier coating (TBC) applications. The Helmholtz free energy (F), internal energy (E), entropy (S), and specific heat capacity (Cv) are determined by calculations derived from the phonon density of states.

Unveiling the potential of CuAlxGa1−xSe2 (x = 0.25) chalcopyrite as absorbent for photovoltaic application: first-principles insights into the structural, elastic, mechanical, electronic, thermodynamic and optical properties

This study explores the structural, elastic, mechanical, electronic, and optical properties of CuAlxGa1−xSe2 (x = 0.25) chalcopyrite, a crucial material in photovoltaic cells. Utilizing type II-IV-V2 chalcopyrite, widely employed in high-efficiency solar cell production, we employ first-principles calculations with Tran–Blaha-modified Becke–Johnson exchange potential techniques. We aim to determine the band gap and optical properties to understand the compound’s morphology, crucial for solar cell development. Results show CuAlxGa1−xSe2 as a 1.36 eV direct band gap semiconductor. Optical characteristics, including dielectric tensor components and absorption coefficient, are calculated to assess its suitability for solar cell applications. Predictions of Young’s modulus E, Poisson’s ratio ν, bulk B, and shear G moduli provide insight into the crystal’s mechanical behavior. Additionally, phonon, dynamical stability, and thermodynamic properties are discussed, shedding light on the material’s potential in photovoltaic technology.

2D Janus TeMoZAZ’ (A = Si,Ge; Z,Z’ = N, P, As; Z ≠ Z'): First‐Principles Insight into the Electronics, and Piezoelectric Properties

AbstractJanus materials possess a diverse array of properties resulting from the breaking of mirror and inversion symmetries, holding significant potential for nanodevices. This study explores the novel TeMoZAZ' (A = Si,Ge; Z,Z' = N, P, As; Z ≠ Z') monolayers derived from the MoA2Z4 monolayer. Utilizing first‐principles calculations, the stability, electronic, transport, mechanical, and piezoelectric properties of the TeMoZAZ' monolayers are investigated. Among the 12 investigated structures, only five‐ TeMoNSiP, TeMoNSiAs, TeMoPSiAs, TeMoAsSiP and TeMoAsGeP monolayers‐ are found to be stable. The electronic properties analysis reveals metallic behavior in the TeMoNSiAs monolayer, while the remaining structures exhibit indirect or direct band gap semiconductor properties. Futher examination of the semiconducting monolayers indentifies the TeMoAsSiP monolayer with notably high hole carrier mobility along the y‐direction, reaching up to 3622.33 cm2 s−1 V−1. Moreover, investigation into the piezoelectric properties of these four semiconductor structures suggests their suitability for diverse applications in piezoelectric devices. Additionally, the effects of biaxial strain on the electronic and piezoelectric properties of these four semiconductor structures are explored. These findings propose a novel approach for designing 2D Janus materials, expanding the repertoire of 2D MA2Z4‐based Janus family and offering promising candidates for optoelectronic devices, wearable devices, and electromechanical systems.

Structural and optoelectronic properties of Zn1-x-yBexMgyTe/InP quaternary alloys: A theoretical study

Density functional calculations show that designed zinc blende Zn1-x-yBexMgyTe/InP quaternary alloys are Γ-centered direct band-gap semiconductors and stable within a wide compositional range. Enhancement in the of Be and Mg compositions sum enhances lattice constant, but reduces minimum band-gap of these quaternary alloys. The Te-5p of valence to Zn-5s; Be-2p,3s; Mg-4s, 3p of conduction band HOMO-LUMO electronic excitations collectively control their optical properties. Such transitions show significant optical absorption in the ultra-violet (UV) region of the electromagnetic spectrum. Calculated optical energy-gaps of these alloys reside in the UV region. Optical energy-gap of quaternary alloy is found to be overestimated with respect to the corresponding fundamental band-gap. With enhancement in the Be and Mg compositions sum, both the fundamental band-gap and optical energy-gap exhibit blue-shift. Computed ε1 (0), n (0) and R (0) reduces with growing band-gap and vice versa. These Zn1-x-yBexMgyTe/InP semiconductor quaternary alloys with such optoelectronic features would be compatible for fabricating UV optoelectronic devices.

Influence of alkali metal cation modifications on physical characteristics of double perovskites Rb2XTlBr6 (X=Li, Na, K): First-principles study for solar energy and thermoelectric applications

In the present work, we used a first-principles method to examine novel direct band gap combinations of double perovskites Rb2XTlBr6 (X = Li, Na, K) and provide a thorough description of their structural, electronic, optical, thermoelectric, and elastic properties. The materials that are being studied have attractive optical and thermoelectric qualities and are proven to be stable, inexpensive, and efficient. The influence of alkali metal cations (Li–K) substitutions on stability and physical characteristics has also been investigated. These materials remain stable in cubic structure as evidenced by the tolerance factor. The electronic characteristics reveal that these combinations are direct band gap semiconductors and alkali metal cations substitutions modify the band gap. The band gap is 1.92 eV for Rb2LiTlBr6, which decreases to 1.87 eV for Rb2NaTlBr6 and 1.78 eV for Rb2KTlBr6. The optical analysis has noticed the absorption edge redshifted, improved upon the cation modification, and has the ability to absorb a broad spectrum. Thermoelectric parameters suggest that an increase in the Seebeck coefficient and reduction in thermal conductivity improves thermoelectric response upon cation substitutions. The anticipated ZT values for Rb2LiTlBr6, Rb2NaTlBr6, and Rb2KTlBr6 are 0.70, 0.72, and 0.74, respectively, increasing with cation modification. The exploration of elastic parameters suggests Rb2LiTlBr6 is stronger than Rb2NaTlBr6 and Rb2KTlBr6, and these combinations are anisotropic and ductile. The findings of this study reveal the importance of alkali metal cation modification for enhancing photovoltaic and thermoelectric capabilities.

DFT insight on stability, optoelectronic, and thermoelectric features of Na3XO (X = Cu, Ag) anti‐perovskites: Promising materials for sustainable energy applications

AbstractThe structural stability, elastic, optoelectronic, and thermoelectric characteristics of anti‐perovskites Na3XO (X = Cu, Ag) have been studied using density functional theory (DFT). The computed formation energy suggests these materials' potential synthesis and thermal stability. The structural and elastic properties of Na3CuO and Na3AgO anti‐perovskite compounds were analyzed using the Perdew–Burke–Ernzerhof (GGA‐PBE) generalized gradient potential approximation. The electronic and thermoelectric properties are calculated using the TB‐mBJ approximation. The materials are identified as direct narrow band gap semiconductors with band gaps of 0.65 and 0.43 eV. The analysis of two‐dimensional charge density contours indicates that Na3CuO and Na3AgO have a mixed bonding character, as validated by the investigation of electron charge density. We analyzed the optical properties of Na3CuO and Na3AgO, including dielectric function, refractive index, absorbance, optical reflectivity, and energy loss, using photon energy up to 6 eV. The investigated thermoelectric characteristics demonstrate figure of merit (ZT) values of 0.58 and 0.56 at room temperature. Consequently, the analyzed anti‐perovskites might address waste heat management requirements and sustainable energy solutions.

Modulated bandgap and gas adsorption behavior on two-dimensional SrAl2S4 monolayer: Potential applications for photovoltaic and energy storage

The structure of a novel two-dimensional layered material SrAl2S4 monolayer has been proposed, and its kinetic and thermodynamic stability has been confirmed. Researches have shown that SrAl2S4 monolayer is a semiconductor material with a bandgap of 1.630 eV for PBE and 2.798 eV for HSE06 at the ground state. Under biaxial strain, SrAl2S4 monolayer can complete the transition from a direct bandgap semiconductor to an indirect bandgap semiconductor, and its bandgap can vary between 0.187 eV and 1.712 eV. In addition, We have considered the adsorption behavior of SrAl2S4 monolayer for hydrogen and oxygen molecules, and the results show that SrAl2S4 monolayer adsorbed H2 molecules remains a direct bandgap semiconductor, whereas SrAl2S4 monolayer adsorbed O2 molecules show indirect bandgap semiconductor properties. At the same time, the adsorption of O2 molecules causes a flat band near the Fermi level, which increases the electrical conductivity. The few charges transfer observed between the SrAl2S4 monolayer and gas molecules confirms that the adsorption process of gas molecules on SrAl2S4 monolayer is physical adsorption. The tunable bandgap characteristics and good adsorption behavior of hydrogen and oxygen exhibited by SrAl2S4 monolayer make it a promising candidate material in the fields of photovoltaics and energy storage.

Direct biexciton generation in Si nanocrystal by a single photon.

It has been shown theoretically that a strong quantum confinement regime in Si nanocrystals promotes highly efficient simultaneous excitation of two electron-hole pairs (biexciton) by a single photon. The rate (inverse lifetime) of biexciton generation has been calculated analytically as a function of the nanocrystal radius. The size-dependence of the rate in Si nanocrystal turns out to be sharp enough-in fact, it is inversely proportional to the sixth power of the radius. At radii values approaching a nanometer, the lifetime of biexciton generation falls into the nanosecond range. The threshold energy of this process in Si nanocrystals is exactly equal to twice the nanocrystal gap in contrast to the case of nanocrystals formed of direct-bandgap semiconductors, where the direct photon-induced creation of a biexciton with such an energy is, in fact, suppressed.

Numerical Study on the Optical Properties of III-V Quaternary Compounds Aluminium Gallium Indium Phosphide Light Emitting Diode

The research works the quaternary compounds of AlGaInP (Aluminium Gallium Indium Phosphide) LEDs that provide luminescence intensity in high-brightness LEDs. AlGaInP LEDs, which are direct bandgap semiconductors with green color emission and a wavelength ranging from 500 to 565 nm, are important in electronics display and liquid crystal backlight applications. Depend on carrier concentration, the desired colors and luminescence intensity, the mole fraction of the quaternary compound is changed and also the bandgap energy. The paper contributions the carrier distribution of holes and electrons, the density of states, and the fermi-dirac distribution function calculated. Based on the carrier concentration, luminescence intensity versus photon energy has been determined. These simulation results are presented using MATLAB simulation with theoretical approach.

First-principles study on the effect of torsional deformation on WSe2 as an anode material for calcium ion batteries.

In this paper, the effects of torsional deformation on the electronic properties of intrinsic WSe2 system and Ca-adsorbed WSe2 system were systematically studied by first-principles method. The results show that Ca can be stably adsorbed on the vacancy (H site) of WSe2 surface in all deformation systems, and the adsorption energy of the system without deformation is the highest. Intrinsic WSe2 is a semiconductor with a direct band gap of 1.53 eV. The torsional deformation makes WSe2 change from a direct band gap semiconductor to an indirect band gap semiconductor and finally to a metal property. The adsorption of Ca makes the conduction band of WSe2 move down and increases the number of peaks in the conduction band region. The new density of state peaks are mainly derived from the contribution of W-d, Se-p, and d orbitals of adsorbed atoms in each adsorption system. Mulliken charge analysis shows that Ca transfers most of the valence electrons to the substrate, and the torsional deformation changes the amount of transferred charge. The twist deformation reduces the diffusion barrier of Ca on WSe2 surface from 0.20 to 0.14 eV. The above results provide a basis for the improved application of WSe2 in ion batteries. In this study, all the first-principles calculations are based on Materials Studio 8.0 software package. The generalized gradient approximation (GGA) functional Perdew-Burke-Ernzerhof (PBE) is used for the electron exchange correlation interactions in all systems. The optimization algorithm uses Broyden-Fletcher-Goldfarb-Shanno (BFGS) to optimize the model structure and calculate the energy. The measured cutoff energy is optimized to 450 eV, and the radius of the vacuum layer in the Z-axis direction is 20 Å. The K-point of 7 × 7 × 1 is selected by Monkhorst-Pack method. The structural optimization criterion is selected, the convergence radius of the force is 0.01 eV/Å, and the displacement radius between atoms is within 0.001 Å distance. The energy convergence radius of each atom is less than 1.0 × 10-6 eV/atom.

Comparison of the effect of C doping on the photovoltaic properties of the defect state transition metal sulfur compounds MX2 (M = Mo, W; X = S, Te): a first-principles study

Two-dimensional layered materials are widely used due to their favorable electrical and optical properties. In this paper, the electronic structure, DOS, charge transfer, and optical properties of the defect state C-MX2 system of transition state metal-sulfur compounds are investigated using first-principle calculations. The electronic structure, DOS, charge transfer and optical properties of three systems, MoS2, MoTe2 and WS2, are systematically compared and analyzed. The results show that MoS2, MoTe2, and WS2 are all direct band-gap semiconductors. After the occurrence of vacancy defects, MoTe2 and WS2 are transformed from direct band-gap to indirect band-gap, while MoS2 still maintains the direct band-gap. We chose C atoms to dope the defective state MX2 system. After doping with a low concentration of C atoms, the Fermi energy level decreases, the valence band shifts upward, and the system undergoes a semiconductor-to-metal transition. In terms of density of states, the Mo-d and W-d orbitals as well as the S-p and Te-p orbitals are gradually enhanced under the effect of defect states and C doping, with the contribution of MoTe2 > MoS2 > WS2. In terms of optical properties, the absorption and reflection peaks of all three systems are blue-shifted after the change of defect states and C doping.

Unveiling the impact of Cd and Zn substitutions on the structural, mechanical, electronic, and optical properties of SrS: A first principles analysis

This study employs ab-initio calculations based on density functional theory (DFT) to comprehensively investigate the multifaceted effects of Cd and Zn substitutions on the structural stability, mechanical behavior, electronic characteristics, and optical properties of SrS alloy. Structural analysis unveils a marginal reduction in lattice parameters for both doped compounds, signifying a subtle influence on the crystalline structure. Mechanical evaluation reveals that SrS and Sr0.75Cd0.25S keep their intrinsic brittleness, whereas the inclusion of 25 % Zn imparts a subtle ductile nature. The conservation of rigidity is observed post-doping, albeit with anisotropic features and differing degrees of stiffness among the compounds. Investigating electronic properties, the band gap of Sr0.75Cd0.25S persists as an indirect transition between M and Γ points, mirroring SrS's behavior. In contrast, a remarkable transformation is noted with 25 % Zn doping, shifting SrS to a direct band gap semiconductor. Interestingly, Cd and Zn incorporation leads to a band gap reduction, suggesting potential avenues for tuning the material's electronic behavior. Dielectric constant analyses unravel intriguing phenomena. The binary compound exhibits Mie resonance across the visible-infrared spectrum, a feature that contracts to the infrared range after doping. This nuanced shift has direct implications on the material's interaction with incident light and its resulting optical properties. Evaluation of the refractive index, absorption coefficient, reflectivity, and optical conductivity demonstrates a striking resemblance in the optical behavior of Sr0.75Zn0.25S and Sr0.75Cd0.25S to the pristine SrS alloy.

Charge engineering in black phosphorene with tunable electronic structures as efficient oxygen evolution electrocatalyst

The unique electronic structure of layered black phosphorus (BP) makes it an ideal candidate material for electrocatalytic oxygen evolution reaction (OER). Charge doping effectively improves the environmental stability and catalytic activity of BP by providing electron transfer channels and reducing charge transfer barrier. Therefore, based on the first principles calculation, this paper theoretically discusses how the intrinsic charge doping without introducing impurities changes the electronic structure and improves the catalytic activity of BP. It is found that charge engineering can effectively regulate and change the electronic structure and work function by stimulating the hybridization between different P-p orbitals, while maintaining the direct bandgap semiconductor characteristics of monolayer BP system. More importantly, in the catalytic process of OER, electrons and hole doping as free charges provide different donor and acceptor energy levels for the system depending on the doping concentration, and affect the adsorption capacity of monolayer BP to different reaction intermediates. At a certain doping concentration, the carrier mobility increases significantly, and the optimal Gibbs free energy and overpotential can be achieved in monolayer BP. These results provide new opportunities and possibilities for designing charge-engineered BP catalysts with adjustable electronic structure and excellent OER activity.

The structural, stability, electronic, optical and thermodynamic properties of Ba2AsXO6（X = V, Nb, Ta）double perovskite oxides: A First-Principles study

In this paper, the structural, mechanical, electronic, optical and thermodynamic properties of Ba2AsXO6 (X = V, Nb, Ta) double perovskite oxides have been studied based on the first principles of density functional theory. By calculating some parameters such as Goldsmith’s tolerance factor (tG), octahedral factor (µ), Bartel’s tolerance factor (τ), formation energy, binding energy and elastic constants, it is found that these double perovskite oxides have the potential for stable existence. In addition, Ba2AsXO6 (X = V, Nb, Ta) is an anisotropic material, in which Ba2AsVO6 is brittle, Ba2AsNbO6 and Ba2AsTaO6 are ductile. The electronic properties of the materials show that Ba2AsVO6 and Ba2AsNbO6 are indirect bandgap semiconductors with a band gap of 1.676 eV and 2.654 eV respectively, while Ba2AsTaO6 is direct bandgap semiconductor with a band gap of 3.252 eV. The optical properties revealed that these perovskites exhibit favorable far-ultraviolet light absorption characteristics. The thermodynamic properties show that the specific heat capacity of these double perovskite oxides reaches the Dulong-Petit limit at around 800 K. These results indicate that Ba2AsXO6 (X = V, Nb, Ta) double perovskite oxides have broad application prospects in the fields of thermoelectricity and optoelectronics. Furthermore, these results also provide a valuable theoretical basis for their future experimental synthesis.

Carrier Transport Properties of the Orthorhombic Phase Boron Nitride Nanoribbons and Rectifying Device Design

Using density functional theory combined with nonequilibrium Green's function, the electronic structures and carrier transport properties of the orthorhombic phase boron nitride nanoribbons (BNNRs) with different edges and different widths are investigated. The calculated results show that both armchair‐ and zigzag‐edged BNNRs are direct bandgap semiconductors. The quantum confinement gives rise to a distinct bandgap for the 1D BNNRs, and the edged atoms play an important role on their electronic structures. The bandgaps of the armchair‐edged BNNRs approach 0.5–0.8 eV when their widths are sufficiently large. However, the electronic structures of the zigzag‐edged BNNRs exhibit more variations dependent on their edged atoms. The J–V characteristics of the BNNRs reveal that the zigzag‐edged BNNRs have superior J–V performance to that of the armchair‐edged counterparts. Eventually, a computational nanodevice design is proposed to achieve rectifying behavior by constructing an in‐plane heterojunction based on the BNNRs without any doping, and the left and right electrodes are formed by differently edged atoms and a small strain is performed on the left electrode. The rectification ratio of about 77.36 is realized. The findings provide comprehensive understandings of the orthorhombic BN monolayer, which can be helpful to its potential application for nanoelectronics.

Strain engineering of electronic, mechanical, and optical properties of orthorhombic III–V group monolayers by first principles calculations

Using first principles calculations, we systematically investigated the effects of strain engineering on the electronic, mechanical, and optical properties of two-dimensional (2D) orthorhombic III–V group materials, including BN, BP, BAs, AlN, AlP, and GaN. It is shown that all the III–V orthorhombic monolayers exhibit excellent mechanical anisotropy for Young’s modulus, Shear modulus, and Poisson’s ratio, especially for the AlN and GaN monolayers. AlN, AlP, and GaN are predicted to be indirect bandgap semiconductors, with their bandgap of 0.70, 0.15, and 0.53 eV, respectively. And BN is demonstrated to be a direct bandgap semiconductor (0.63 eV). Under uniaxial tensile strains, their electronic structures have non-monotonic anisotropic variations and these monolayers can be effectively modulated from metal to semiconductor, experiencing indirect–direct bandgap transitions. In addition, all the orthorhombic III–V materials exhibit highly anisotropic light-harvesting performances and the optical absorbance can be efficiently tailored with tensile strains applied along a- and b-directions. The strong optical absorptions in the visible light regions suggested that AlN, BN, and GaN may be optically tunable 2D materials for component absorbance layers for solar cell applications. The excellent anisotropic and tunable electronic, mechanical, and optical performances indicate that the orthorhombic III–V monolayers are promising candidates for potential applications of optoelectronics and photovoltaics.

Effect of anion (S−2 & Se−2) replacement on photovoltaic properties in transition metal (Ba-Barium) chalcogenide perovskites

Material scientists have stepped up their search for efficient materials in low-cost, high-stability, nontoxic energy conversion devices. In this paper, emerging materials inspire us to study one of the perovskite chalcogens made from alkaline-earth metals (Barelium). Therefore, we determined some fundamental properties with some application-based properties, which explained their applicability in energy conversion device fabrication by first-principles calculation within the WIEN2K Code. Structure stability has been verified by Birch–Murnaghan fits and thermal stability at different temperatures and pressure ranges is explained by Gibbs function in thermodynamic properties. By using modified Becke–Johnson (mBJ) potential, electronic and optical characteristics of these materials provide insight into their nature: they were revealed to be direct bandgap semiconductors with the calculated values of 1.77[Formula: see text]eV (1.25[Formula: see text]eV) for BaZrS3(BaZrSe3), respectively. Both materials exhibit transparency on low-energy striking photons and demonstrate absorption and optical conduction in the UV region. Both materials exhibit transparency on low-energy striking photons and demonstrate absorption and optical conduction in the UV region. In the thermoelectric parameter, the figure of merit (ZT) is unity at room temperature and decreases up to 0.98 with temperature increment which reveals that these materials will be helpful in thermoelectric devices. As per the application part, we carried out the calculation of the spectroscopic limited maximum efficiency (SLME) and found that efficiency increases from 6.5% to 27.1% (8.1% to 31.9%) for BaZrS3 (BaZrSe3), respectively. The film thickness increased from 100[Formula: see text]nm to 1[Formula: see text][Formula: see text]m at room temperature and then stabilized. This emerging study shows that these materials can be used as an alert substance in energy conversion device fabrications and the proposed outcomes are in good acceptance with the experimental and other theoretical data. As per the optical and thermoelectric parameters of these materials, we infer that both are promising candidates in energy conversion device fabrication.

Double half Heusler (DHH) alloys with a high absorption coefficient shed light on the optoelectronic, thermoelectric, and structural, properties of X4Fe2Hf4Pt2 (X = Bi, Sb), derived from DFT data analysis

In this investigation, we employ density functional theory (DFT) with the generalised gradient approximation of Perdew–Burke–Ernzerhof (GGA-PBE) and the modified Beck-Johnson approach (mBJ-GGA). Our focus is on examining the optoelectronic and thermoelectric properties of Bi4Fe2Hf4Pt2 and Sb4Fe2Hf4Pt2 compounds. The findings indicate that both compounds are stable in non-magnetic phase (NM). Regarding electronic characteristics, it is revealed that these compounds are direct bandgap semiconductors. The optical analysis suggests that these compounds demonstrate high reflectivity within the visible and ultraviolet spectra, rendering them promising candidates for solar cells and photovoltaic applications. Furthermore, these materials present as highly promising candidates for thermoelectric purposes due to their remarkable figure of merit (ZT) and notable Seebeck coefficient (S) values. However, there is a lack of theoretical or experimental data available for these compounds for conducting comparison with our results. We think future experimenters attempting to synthesise these chemicals experimentally will benefit from the current study.

Inserting intermolecular hydrogen bonds to achieve dimensional regulation and phase transition temperature enhancement

Organic-inorganic hybrid materials have become potential candidates in fields of light emitting diodes (LEDs), mechanical switches, energy conversion due to their excellent magneto-opto-electronic properties. Further improving the performance of materials is a prerequisite for achieving their commercial application. Currently, many effective strategies have been proposed and validated to enhance the properties of materials, but both simultaneously realizing the improvement phase transition temperature and dimensional regulation of materials remains a huge challenge. Here, we successfully synthesized two hybrid materials, (pyrrolidinium)PbI3 (Com-1) and (3-hydroxypyrrolium)6Pb5I16 (Com-2). In this work, the strategy of inserting intermolecular hydrogen bonds cleverly achieves a significant increase in phase transition temperature (ΔT = 81 K) and dimensional regulation (1D to 2D). Moreover, semiconductor properties of two compounds are investigated to be direct bandgap semiconductor. In short, inserting intermolecular hydrogen bonds between molecules is an effective strategy to improve physical performance.

Green synthesis and characterization of gold nanoparticles from discarded computer PCBs on reduction of environmental pollution

The economic value of gold content in electronic waste, particularly waste printed circuit boards (PCBs), has generated interest in recovering gold from this material. Unfortunately, due to the severe environmental hazards associated with such waste, there is a pressing need for efficient and selective methods of gold nanoparticle recovery. A novel technique has been developed to synthesize gold nanoparticles that employ chlorate leaching and Punica granatum extract to minimize the environmental impact of electronic waste. Multiple analytical methods, including UV-Vis, XRD, EDS, SEM, and TEM analysis, were utilized to identify and characterize the extracted gold nanoparticles. The UV-Vis spectrum showed GNP-absorption peaks at a narrow range of wavelengths, primarily at 520 nm, confirming the formation of gold nanoparticles from the e-waste. The XRD analysis identified the material as metallic gold with characteristic peaks of gold crystals (111), (200), (220), and (311), corresponding to the FCC crystal structure. The SEM and TEM analysis revealed that most of the Au nanoparticles were less than 40 nm in size, with some larger particles resulting from the agglomeration of smaller ones. The EDS spectrum analysis indicated that the gold atoms emitted strong signals. At the same time, other elements such as carbon, oxygen, and metals such as Sn, Zn, Pd, Cu, and Cd showed weaker signals. The recovered gold nanoparticles were found to have a bandgap of 2.2 eV, indicating that they are a direct bandgap semiconductor suitable for use in optoelectronic applications. The environmental impact of the PCBs and the chemicals used in the process were also analyzed to address the necessity of using discarded electronic waste to reduce environmental pollution. The proposed method showed high efficiency for extracting gold nanoparticles from e-waste, with simple process steps, low chemical usage, and low cost, as demonstrated by the results.