Diode Forward Voltage Research Articles

Thermal Analysis of InGaN/GaN Multiple Quantum Well Light Emitting Diodes with Different Mesa Sizes

We analyze experimentally and theoretically the thermal characteristics of 470 nm InGaN/GaN light emitting diodes (LEDs) with different mesa sizes for efficient heat dissipation. For various mesa sizes, the junction temperature is measured as a function of injection current by the diode forward voltage method. The junction temperature (Tj) increases linearly with injection current and it rises rapidly with the reduction in mesa size. The thermal parameters, such as the junction temperature, temperature profile, and thermal resistance (Rth), are obtained from thermal simulations with the heat source density, determined from the measured light–current–voltage data, using a three dimensional heat dissipation model. At 200 mA, the Tj values of LEDs are theoretically calculated as 392.7 and 578 K for 450 ×450 and 250 ×250 µm2, respectively. The thermal resistance is kept nearly constant due to a linear relationship between junction temperature and injection current and it is reduced as the mesa size increases, indicating a low Rth of < 75 K/W for 450 ×450 µm2 LED. The Rth values obtained by the thermal simulation are fairly consistent with the experimental data. The use of the substrate with a relatively high thermal conductivity can also improve significantly the Rth of LEDs.

BPW34 Commercialp-i-nDiodes for High-Level 1-MeV Neutron Equivalent Fluence Monitoring

The BPW34 p-i-n diode was characterized at CERN in view of its utilization as radiation monitor at the LHC to cover the broad 1-MeV neutron equivalent fluence (Phieq) range expected for the LHC machine and experiments during operation. Electrical measurements for both forward and reverse bias were used to characterize the device and to understand its behavior under irradiation. When the device is powered forward, a sensitivity to fast hadrons for Phieq > 2 times1012 cm-2 has been observed. With increasing particle fluences the forward I- V characteristics of the diode shifts towards higher voltages. At Phieq > 3times1013 cm-2, the forward characteristic starts to bend back assuming a thyristor-like behavior. An explanation for this phenomenon is given in this article. Finally, detailed radiation-response curves for the forward bias-operation and annealing studies of the diode's forward voltage are presented for proton, neutron and gamma irradiation.

Junction Temperature in Ultraviolet Light-Emitting Diodes

The junction temperature and thermal resistance of AlGaN and GaInN ultraviolet (UV) light-emitting diodes (LEDs) emitting at 295 and 375 nm, respectively, are measured using the temperature coefficient of diode-forward voltage. An analysis of the experimental method reveals that the diode-forward voltage has a high accuracy of ±3°C. A comprehensive theoretical model for the dependence of diode-forward voltage (Vf) on junction temperature (Tj) is developed taking into account the temperature dependence of the energy gap and the temperature coefficient of diode resistance. The difference between the junction voltage temperature coefficient (dVj/dT) and the forward voltage temperature coefficient (dVf/dT) is shown to be caused by diode series resistance. The data indicate that the n-type neutral regions are the dominant resistive element in deep-UV devices. A linear relationship between junction temperature and current is found. Junction temperature is also measured by the emission-peak-shift method. The high-energy slope of the spectrum is explored in the measurement of carrier temperature.

Junction and carrier temperature measurements in deep-ultraviolet light-emitting diodes using three different methods

The junction temperature of AlGaN ultraviolet light-emitting diodes emitting at 295nm is measured by using the temperature coefficients of the diode forward voltage and emission peak energy. The high-energy slope of the spectrum is explored to measure the carrier temperature. A linear relation between junction temperature and current is found. Analysis of the experimental methods reveals that the diode-forward voltage is the most accurate (±3°C). A theoretical model for the dependence of the diode forward voltage (Vf) on junction temperature (Tj) is developed that takes into account the temperature dependence of the energy gap. A thermal resistance of 87.6K∕W is obtained with the device mounted with thermal paste on a heat sink.

Junction–temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method

A theoretical model for the dependence of the diode forward voltage (Vf) on junction temperature (Tj) is developed. An expression for dVf∕dT is derived that takes into account all relevant contributions to the temperature dependence of the forward voltage including the intrinsic carrier concentration, the band-gap energy, and the effective density of states. Experimental results on the junction temperature of GaN ultraviolet light-emitting diodes are presented. Excellent agreement between the theoretical and experimental temperature coefficient of the forward voltage (dVf∕dT) is found. A linear relation between the junction temperature and the forward voltage is found.

JUNCTION-TEMPERATURE MEASUREMENTS IN GaN UV LIGHT-EMITTING DIODES USING THE DIODE FORWARD VOLTAGE

A theoretical model for the dependence of the diode forward voltage (V f ) on junction temperature (T) is developed. A new expression for d V f / d T is derived that takes into account all relevant contributions to the temperature dependence of the forward voltage including the intrinsic carrier concentration, the bandgap energy, and the effective density of states. Experimental results on the junction temperature of GaN UV LEDs are presented. Excellent agreement between the theoretical and experimental temperature coefficient of the forward voltage ( d V f / d T) is found. The experimentally found linear dependence of the junction temperature on forward current is explained by a thermal conduction model. A thermal resistivity of 342.2 K/W is found for the UV LED.

Junction Temperature Measurements in Deep-UV Light-Emitting Diodes

ABSTRACTThe junction temperature of AlGaN/GaN ultraviolet (UV) Light-Emitting Diodes (LEDs) emitting at 295 nm is measured by using the temperature coefficients of the diode forward voltage and emission peak energy. The high-energy slope of the spectrum is explored to measure the carrier temperature. A linear relation between junction temperature and current is found. Analysis of the experimental methods reveals that the diode-forward voltage is the most accurate method (± 3 °C). A theoretical model for the dependence of the diode junction voltage (Vj) on junction temperature (T) is developed that takes into account the temperature dependence of the energy gap. A thermal resistance of 87.6 K/W is obtained with the AlGaN/GaN LED sample mounted with thermal paste on a heat sink.

SINGLE-LOOP CURRENT-MODE CONTROL OF A PWM BOOST DC-TO-DC CONVERTER WITH A NON-SYMMETRIC PHASE CONTROLLER

An extensive small-signal analysis of a single-loop current-mode control strategy for a pulse-width-modulated (PWM) boost DC-to-DC power converter operating in continuous conduction mode (CCM) is proposed using a new non-symmetric phase controller. To model the boost power stage, a linear circuit model is used which includes all parasitic components such as the equivalent series resistance (ESR) of the filter capacitor, the ESR of the inductor, the transistor ON-resistance, and the diode forward resistance and offset voltage. A boost power stage design example gives component design equations and will serve to illustrate the closed-loop converter design. A design procedure for the new non-symmetric phase controller is presented. Open-loop and closed-loop circuit models and transfer functions are derived for the boost PWM converter and illustrated by Bode plots. An approach is presented for simplifying closed-loop transfer functions, using Euler's identity, into a format which is conducive to modeling in any high level programming language on a personal computer. Bode plots are obtained using a data analysis software package Axum 3.0 which combines a programming language, spread-sheet, and publication quality technical graphics. The proposed control scheme directly controls the inductor current and indirectly controls the load current and output voltage. The closed-loop transfer functions of the proposed control scheme do not contain a righthalf plane (RHP) zero, in contrast to the closed-loop transfer functions of a single-loop voltage-mode control scheme. The absence of the RHP zero provides better stability by making it easier to obtain large or specified gain and phase margins.

CLOSED-LOOP CHARACTERISTICS OF VOLTAGE-MODE-CONTROLLED PWM BOOST DC-DC CONVERTER WITH AN INTEGRAL-LEAD CONTROLLER

A complete analysis of a voltage-mode-controlled pulse-width-modulated (PWM) boost DC-DC power converter is presented using a previously derived small-signal model for continuous conduction mode (CCM). All parasitic components such as the equivalent series resistance (ESR) of the filter capacitor, the ESR of the inductor, the transistor on-resistance, and the diode forward resistance and offset voltage are included in the model. A design procedure for an integral-lead controller including the loading effect of the voltage divider in the feedback loop is given. The Bode plots of the closed-loop control-to-output transfer function, input-to-output transfer function, input impedance, and output impedance are determined and illustrated for three values of the duty cycle. Step response plots of the PWM boost converter in the open-loop and closed-loop cases are shown for changes in line voltage and duty cycle.

Class D current-driven rectifiers for resonant DC/DC converter applications

Analyses and experimental results are given for a family of three Class D current-driven rectifiers. The diode current is half-sine wave and the diode voltage is a square wave. The diode forward voltage and forward resistance are taken into account in the analyses. The basic performance parameters of the rectifiers are determined, such as input resistance, voltage transfer function, efficiency, and power factor. The ripple voltage is estimated, and some effects of the equivalent series resistance and equivalent series inductance of filter capacitors on the ripples are discussed. The experimental results were obtained using IR31DQ06 Schottky diodes at 1 MHz and 16 W output power. >

An investigation of recombination in gold-doped pin rectifiers

End region recombination in gold-doped PIN diodes has been investigated using a laser probe technique. It is found that, in contrast to undoped diodes, it is necessary to introduce a linear term to describe this recombination. The magnitude of the linear term increases markedly with the degree of gold doping. Linear end region recombination is indistinguishable from base recombination during an open circuit voltage decay and the base lifetime deduced by this technique has to be corrected. Theories for diode switching and forward voltage have been tested against experimental results on a large number of diodes with different base widths and base lifetimes. It is found that the device behaviour can be accurately predicted if the base and end region recombination parameters are known.

The measurement of temperature using a semiconductor diode

A semiconductor diode is used as a temperature sensor conducting current pulses having very short duration in comparison with the period of the pulses. In this way heating of its junction caused by the current is radically reduced. The measurement is more objective. The temperature is found by converting the diode forward voltage pulse amplitude in the time interval and comparing the interval with the period of the pulses. The system is carefully designed and analysed front the point of view of its zero temperature stability.