Design Of Diodes Research Articles

Theoretical design of molecular diode based on thiol- and amino- terminated molecules

Utilizing density functional theory (DFT) and non-equilibrium Green’s function, we systematically studied the electrical transport and rectification properties of thiol- and amino-terminated molecules embedded in graphene nanoribbons. We firstly found the thiol-terminated molecules show better electron transport properties compared to the amino-terminated, which can be attributed to the strong electronwithdrawing ability and favorable coupling effects. Secondly, the symmetrical molecules show almost symmetrical current-voltage (I-V) curves and exhibit negligible rectification effects. On the other hand, the asymmetrical molecules exhibit asymmetrical I-V curves and better rectification performance. The rectification effect is closely related to molecular asymmetry degrees. For example, the rectification ratio of asymmetric N6 ((E)-Nl-(3-aminopropyl)-but-2-ene-1,4-diamine) molecule is much smaller than the N4 (5-phenylthiazole-2,4-diamine) and N5 (2,6-diaminohexane-1,1,5-triol) molecules. Furthermore, we found the rectification ratio of the asymmetrical amino-terminated molecules can reach 400, while the biggest rectification ratio of the thiol-terminated molecule can only reach 45. These findings offer crucial insights for future graphene molecular electronic device design.

Design and experimental analysis of a novel thermal diode with asymmetric heat transfer inspired by feather

To overcome the limitation of isotropic heat transfer of traditional heat pipes, a novel thermal diode with asymmetric flow resistance vapor channel inspired by the goose feather fibers is proposed in this study. The thermal performance of novel thermal diode is experimentally investigated. Results show that under the wide range of operating conditions, the thermal resistance of one end surpasses the thermal resistance of the other end, indicating its excellent thermal rectification capability. Under the filling ratio of 10 % and heating power of 7.5 W, the maximum thermal resistance of the thermal diode is 5.23 times the minimum thermal resistance, demonstrating excellent asymmetric heat transfer performance. Experimental results demonstrate that the novel thermal diode proposed in this study can easily change its unidirectional heat transfer direction by simply adjusting the internal filling ratio, showing significant application potential in the fields of thermal control system.

Optimum Design of InGaN Blue Laser Diodes with Indium-Tin-Oxide and Dielectric Cladding Layers.

The efficiency of current GaN-based blue laser diodes (LDs) is limited by the high resistance of a thick p-AlGaN cladding layer. To reduce the operation voltage of InGaN blue LDs, we investigated optimum LD structures with an indium tin oxide (ITO) partial cladding layer using numerical simulations of LD device characteristics such as laser power, forward voltage, and wall-plug efficiency (WPE). The wall-plug efficiency of the optimized structure with the ITO layer was found to increase by more than 20% relative to the WPE of conventional LD structures. In the optimum design, the thickness of the p-AlGaN layer decreased from 700 to 150 nm, resulting in a significantly reduced operation voltage and, hence, increased WPE. In addition, we have proposed a new type of GaN-based blue LD structure with a dielectric partial cladding layer to further reduce the optical absorption of a lasing mode. The p-cladding layer of the proposed structure consisted of SiO2, ITO, and p-AlGaN layers. In the optimized structure, the total thickness of the ITO and p-AlGaN layers was less than 100 nm, leading to significantly improved slope efficiency and operation voltage. The WPE of the optimized structure was increased relatively by 25% compared to the WPE of conventional GaN-based LD structures with a p-AlGaN cladding layer. The investigated LD structures employing the ITO and SiO2 cladding layers are expected to significantly enhance the WPE of high-power GaN-based blue LDs.

Optimal design of pseudo-vertical Schottky diode with n-type junction terminal extension structure

In the study, a pseudo-vertical Schottky barrier diode (pVSBD) with n-type junction terminal extension (JTE) is proposed. The impacts of key parameters, including cover distance, junction depth, and stretch distance, are evaluated on the electrical characteristics of the designed pVSBD. In the designed device, the homoepitaxial pn-junction constructed with n-type JTE and p- drift layer can reshape the electric field and alleviate the electric field crowding around the corner of Schottky contact, which enables the p- drift layer withstand the higher reverse bias voltage. Thus, the blocking capacity of the pVSBD device is improved, and the maximum breakdown voltage of 2885 V can be obtained. Meanwhile, it is also shown that the doping concentration of n-type diamond termination can influence the electrical characteristics obviously. The trade-off between the breakdown voltage and the specific ON-state resistance is considered in the paper. The pVSBD device with high blocking voltage can be realized based on the proposed pVSBD structure.

Design and evaluation of β-Ga2O3 junction barrier schottky diode with p-GaN heterojunction

A novel design for a junction barrier Schottky (JBS) diode based on a p-GaN/n-Ga2O3 heterojunction is proposed, exhibiting superior static characteristics and a higher breakdown capability compared to the traditional Ga2O3 Schottky barrier diode (SBD). By utilizing wide-bandgap p-type GaN, the β-Ga2O3 JBS diodes demonstrate a turn-on voltage (V on ) of approximately 0.8 V. Moreover, a breakdown voltage (V br ) of 880 V and a specific on-resistance (R on,sp ) of 3.96 mΩ·cm2 are achieved, resulting in a Baliga’s figure of merit (BFOM) of approximately 0.2 GW /cm 2. A forward current density of 465 A cm−2 at a forward voltage of 3 V is attained. The simulated reverse leakage current density remains low at 9.0 mA cm−2 at 800 V. Floating field rings, in conjunction with junction termination extension (JTE), were utilized as edge termination methods to attain a high breakdown voltage. The impact of β-Ga2O3 periodic fin width fluctuations on the electrical characteristics of JBS was investigated. Due to the enhanced sidewall depletion effect caused by p-type GaN, the forward current (I F ) and reverse current (I R ) decrease when the β-Ga2O3 periodic fin width decreases. The findings of this study indicate the remarkable promise of p-GaN/n-Ga2O3 JBS diodes for power device applications.

A 128 × 128 SPAD LiDAR sensor with column-parallel 25 ps resolution TA-ADCs

This paper presents a design of single photon avalanche diode (SPAD) light detection and ranging (LiDAR) sensor with 128 × 128 pixels and 128 column-parallel time-to-analog-merged-analog-to-digital converts (TA-ADCs). Unlike the conventional TAC-based SPAD LiDAR sensor, in which the TAC and ADC are separately implemented, we propose to merge the TAC and ADC by sharing their capacitors, thus avoiding the analog readout noise of TAC’s output buffer, improving the conversion rate, and reducing chip area. The reverse start-stop logic is employed to reduce the power of the TA-ADC. Fabricated in a 180 nm CMOS process, our prototype sensor exhibits a timing resolution of 25 ps, a DNL of +0.30/−0.77 LSB, an INL of +1.41/−2.20 LSB, and a total power consumption of 190 mW. A flash LiDAR system based on this sensor demonstrates the function of 2D/3D imaging with 128 × 128 resolution, 25 kHz inter-frame rate, and sub-centimeter ranging precision.

Development of novel thermal diode inspired by the structure of venous valve

To increase the unidirectional heat transfer capability of a thermal diode, a novel thermal diode with unidirectional movable valves as vapor channel is proposed based on the structure of venous valves. The thermal performance of this bionic thermal diode was experimentally investigated under different working conditions. The results demonstrate that the bionic thermal diode exhibits a high thermal rectification ratio and strong stability. The best thermal rectification ratio is 10.79, with a forward thermal resistance of 0.26 °C/W and a reverse thermal resistance of 2.86 °C/W, at a heating power of 15 W and a filling ratio of 15 %. The temperature distribution indicated that, under the reverse heat transfer mode, the vapor was obstructed at the first valve, leading to the high thermal resistance of thermal diode. Additionally, the effect of inclined angle on the thermal performance of thermal diode was also investigated. This study provides a novel approach for the design of thermal diodes.

Potentiality of graphene as a base material for impact ionization avalanche transit time diode in high-frequency applications

In this paper, the microwave application potential of graphene is studied using a double-drift-region (DDR) impact ionization avalanche transit time (IMPATT) diode. The simulation of this diode is carried out for the very first time at several different atmospheric window frequencies. Because graphene has unique and special properties, it could be used to make electronic gadgets for the next generation. The device is simulated at a variety of millimeter and sub-millimeter wave frequencies using a model called self-consistent drift diffusion (SCDD), which was developed by the author based on current continuity, Poisson’s equation and space charge equation. When compared to traditional IMPATT devices such as Si, GaAs, InP and GaP, the results demonstrate superior performance in terms of efficiency, and RF power across a wide range of operating conditions. Again, the behavior of noise in graphene IMPATT is studied, and it is found that it makes less noise than Si and GaAs IMPATT. The simulation results open up new avenues for IMPATT diode manufacture and design.

Thermal Analysis of THz Schottky Diode Chips with Single and Double-Row Anode Arrangement.

GaN Schottky diodes show great potential in high-power terahertz frequency multipliers. The thermal characteristics of GaN Schottky diodes with single and double-row anode arrangements are described in this paper. The temperature distribution inside the Schottky diode is discussed in detail under the coupling condition of Joule heat and solid heat transfer. The effects of different substrates and substrate geometric parameters on the thermal characteristics of the Schottky diode chips with single and double-row anode arrangements are systematically analyzed. Compared with that of the chip with single-row anode arrangement, the maximum temperature of the chip with double-row anode arrangement can be reduced by 40 K at the same conditions. For chips with different substrates, chips with diamond substrates can withstand greater power dissipation when reaching the same temperature. The simulation results are instructive for the design and optimization of Schottky diodes in the terahertz field.

Design and modelling of SiC MPS diodes with superior surge current robustness

The investigation and modelling of the 4H–SiC merged PiN/Schottky (MPS) diode are presented for superior surge current capability design. A bipolar current transmission (BCT) model is proposed for investigating the current transport mechanism of MPS diodes under bipolar operation. The knee voltage (Vturn) defining the conversion from unipolar to bipolar operation is precisely modelled for controlling surge current. According to the proposed model, the method of designing a SiC MPS diode with high robustness against surge current is discussed and concluded primarily, which has great significance for improving the reliability of SiC MPS diodes. Meanwhile, we propose a new hybrid stripe cell design according model calculation and simulation for enhancing the surge current capability of the diode while maintaining high forward current capability. The proposed model and design method are verified by experimental results. And the proposed hybrid stripe cell design has superior surge current robustness while it almost avoids the forward current degradation in experiment.

Novel design and modelling of SiC junction barrier Schottky diode with improved Baliga FOM under high-temperature applications

A novel 650 V/50 A 4H–SiC junction barrier Schottky diode (JBSD) featuring a stripe-square composite cell design (SSC-JBSD) is proposed in this paper to improve the high-temperature performance. A model of the resistance of the JBS (RJBS) is established to explain the mechanism. The particular cell design of the SSC-JBSD forms a circular current distribution, which can improve the forward current and suppress the degeneration of RJBS caused by the lower electron mobility at high temperatures. The combination of the stripe and square P+ regions achieves a high current and a lower power loss under high temperature while maintaining a high breakdown voltage. Specifically, the power loss of the SSC-JBSD with a forward current of 50 A only increases by 6.9 % under 450 K compared to that under 300 K, while that of the conventional JBS diode (Conv-JBSD) increases by 14.1 %. And the Baliga figure of merit (FOM) of the SSC-JBSD is 15.6 % higher than that of the Conv-JBSD under a temperature of 450 K. The on-state self-heating measurement shows that the temperature of the SSC-JBSD is approximately 30 K lower than that of the Conv-JBSD after 5 s of constant on-state operation with a forward current of 50 A. The proposed SSC-JBSD demonstrates superior performance at high temperatures, making it an available replacement for Conv-JBSD in harsh environments characterized by high temperatures and large currents.

Asymmetric energy barrier induced magnetic skyrmion diodes in synthetic antiferromagnetic nanotracks

Magnetic skyrmions are nanoscale spin textures with topological protection properties, which are regarded as promising information carriers. When skyrmions move along nanotracks, their trajectories will shift if affected by skyrmion Hall effect and pinning effect. In this work, the influence of trapezoidal notches in synthetic antiferromagnetic nanotracks on the dynamics of skyrmions is investigated through micromagnetic simulation. The results exhibit that the asymmetric energy barrier induced by the asymmetric geometric structure can hinder reverse motion of skyrmions to realize the unidirectional conduction function of the diodes. Adjusting the height and inclination angle of the trapezoidal notch can effectively expand the current operating windows of the diodes, and the larger the height or inclination angle, the higher the threshold current density to overcome the pinning effect of the geometric energy barrier. Furthermore, the failure mode has a crucial impact on the implementation of skyrmion diodes. By utilizing the asymmetric structure, the forward conduction and reverse cutoff of skyrmion-based diodes can be achieved within 4 ns, with lower energy consumption than traditional diodes, resulting in high efficiency and low energy consumption of diodes. This work proposes a method for realizing the diode functionality by simply altering the geometric structure of the nanotracks, which may play an important role in the design and application of skyrmion-based diodes.

A method to design a fast chaotic oscillator using CCTA

This article introduces a novel method for designing a fast chaotic oscillator using a CCTA (Current Conveyor Transconductance Amplifier) based on Chua's circuit. The proposed method uses innovative configurations and advanced simulation techniques to overcome challenges in high-speed operation, nonlinear dynamics, and Analog Building Block (ABB) selection. The design begins with nonlinear negative resistance, essential for Chua's diode characteristics, including two negative resistances, NR1 and NR2. The circuit integrates one CCTA block, two grounded capacitors, two fixed resistors, one inductor, and one potentiometer. It is simulated using PSPICE with IC (Integrated Circuit) macro-models and 180nm CMOS (Complementary Metal Oxide Semiconductor) technology. Various chaotic waveforms and attractors are produced, validating the theoretical and mathematical predictions. By varying the resistance values (1450Ω, 1650Ω, 1800Ω, 1950Ω), the circuit exhibits different chaotic behaviors, such as large limit cycles, double-scroll attractors, Rossler-type attractors, and I-periodic attractors. FFT (Fast Fourier Transform) analysis confirms the highest dominant operating frequency of 37.5MHz. A Monte Carlo simulation with 100 runs shows maximum voltage variations in the chaotic waveforms of 5.21 % and 4.61 % across the capacitors, demonstrating robustness and reliability. This design offers significant advancements in implementing high-frequency chaotic oscillators, with potential applications in various fields requiring chaotic signal generation.•A novel design of Chua's diode and Chua's chaotic oscillator using only one CCTA block is presented in this paper.•The proposed chaotic oscillator achieves the highest operating frequency of 37.5MHz.•The proposed circuit is simulated using commercially available ICs (MAX435 and AD844) and CMOS 180nm technology in PSPICE to confirm its workability.

Experimental study of a low-cost reversible thermal diode for advanced heat manipulation

A low-cost reversible thermal diode was fabricated by a copper tube loop incorporating a valve in the top channel for advanced thermal management. The inner surface of one vertical tube was treated to superhydrophobic, while that of the other vertical tube was modified to superhydrophilic and further loaded with a superhydrophilic copper mesh for water wicking. Furthermore, the valve in the top channel can behave as a switch to control the hot vapor flow between the two vertical tubes. Then, different heat powers from 5 W to 15 W were applied to investigate the rectification effect of the thermal diode under low (30 %), medium (50 %), and high (70 %) filling ratios (FR) of the working fluid. The results showed that its rectification ratio could exceed 2.8 with the help of the control valve at FR = 30 %. Furthermore, the rectification effect could be reversed by the valve without flipping the thermal diode. In reversible working mode, the reversed heat transport could reach twice of the forward heat transport at FR = 50 %. Therefore, owning to the reversible heat transfer capacity, this study can guide the advanced thermal diode design for unstable waste heat recovery, solar energy harvesting, building energy management, etc.

Quantum annealing-aided design of an ultrathin-metamaterial optical diode

Thin-film optical diodes are important elements for miniaturizing photonic systems. However, the design of optical diodes relies on empirical and heuristic approaches. This poses a significant challenge for identifying optimal structural models of optical diodes at given wavelengths. Here, we leverage a quantum annealing-enhanced active learning scheme to automatically identify optimal designs of 130 nm-thick optical diodes. An optical diode is a stratified volume diffractive film discretized into rectangular pixels, where each pixel is assigned to either a metal or dielectric. The proposed scheme identifies the optimal material states of each pixel, maximizing the quality of optical isolation at given wavelengths. Consequently, we successfully identify optimal structures at three specific wavelengths (600, 800, and 1000 nm). In the best-case scenario, when the forward transmissivity is 85%, the backward transmissivity is 0.1%. Electromagnetic field profiles reveal that the designed diode strongly supports surface plasmons coupled across counterintuitive metal–dielectric pixel arrays. Thereby, it yields the transmission of first-order diffracted light with a high amplitude. In contrast, backward transmission has decoupled surface plasmons that redirect Poynting vectors back to the incident medium, resulting in near attenuation of its transmission. In addition, we experimentally verify the optical isolation function of the optical diode.

First-principles investigations and MOCVD growth of Si-doped β-Ga2O3 thin films on sapphire substrates for enhancing Schottky barrier diode characteristics

In the realm of high-power electronics, the potential of gallium oxide (β-Ga2O3) as a front-runner material has garnered significant attention due to its wide bandgap and the capacity to withstand high critical electric fields. To push the boundaries of performance for β-Ga2O3 devices, a meticulous exploration into the effects of silicon (Si) doping on β-Ga2O3 films was carried out using the metalorganic chemical vapor deposition (MOCVD) technique with various tetraethoxysilane (TEOS) flow rates (0–30 sccm). The Si-doped β-Ga2O3 films were systematically studied and characterized using XRD, SEM, and XPS techniques. XRD patterns demonstrated the preservation of the β-Ga2O3 monoclinic structure in the Si-doped β-Ga2O3 films, without any evidence of secondary phases. In addition to this, first-principles calculations were performed to explore the incorporation of Si atoms in Ga2O3 supercells, which revealed the preference of Si atoms to occupy substitutional Ga tetrahedral sites within the Ga2O3 lattice. Through the utilization of Si-doped β-Ga2O3 films, a unique design of donut-shaped Schottky barrier diode (SBD) was successfully engineered. Remarkably, the Si-doped β-Ga2O3 SBD (employed with 20 sccm TEOS flow rate) exhibited the breakdown voltage (Vbr) of 497 V and Baliga's Figure of Merit (BFOM) value of 1.16 kW/cm2, which is five-order higher BFOM compared to undoped β-Ga2O3 SBD. This substantial improvement in BFOM underscores the significant potential of Si-doped β-Ga2O3 films for high-power electronics, opening avenues for enhanced device efficiency and capabilities.

Modeling of Schottky diode and optimal matching circuit design for low power RF energy harvesting

This work designs and implements a single-stage rectifier-based RF energy harvesting device. This device integrates a receiving antenna and a rectifying circuit to convert ambient electromagnetic energy into useful DC power efficiently. The rectenna is carefully engineered with an optimal matching circuit, achieving high efficiency with a return loss of less than −10 dB. The design uses a practical model of the Schottky diode, where both RF and DC characteristics are derived through extensive experimental measurements. The results from both experiments and simulations confirm the effectiveness of the design, showing its proficiency in efficient RF energy harvesting under low-power conditions. The antenna produced operates in the wifi band with a gain close to 4 dBi and a bandwidth of 100 MHz. With a load resistance of 1600 Ω, the proposed device achieves an impressive RF-to-DC conversion efficiency of approximately 52% at a low incident power of −5 dBm. These findings highlight the potential and reliability of rectenna systems for practical and efficient RF energy harvesting applications. The study significantly contributes to our understanding of rectenna-based energy harvesting, providing valuable insights for future design considerations and applications in low-power RF systems.

Evaluating User Experience Satisfaction of LED Desk Lamp using FAHP-FCE Approach

Technology development has effectively guided the design and development of light-emitting diode (LED) desk lamps, and the design and development of desk lamps are closely related to users. However, studies on user satisfaction when using desk lamps are still under explored. To this end, this paper proposes a satisfaction evaluation method that combines the fuzzy analytic hierarchy process (FAHP) and fuzzy comprehensive evaluation (FCE). This research results could provide an effective theoretical and practical reference for the experience design of LED desk lamps to improve and meet users' needs, thereby potentially improving the design of LED desk lamps for better customer satisfaction.

Controlling the spin current around the rectangular cavities in two-dimensional topological insulators.

Controlling spin current in topological insulators (TIs) is a crucial requirement for applications in quantum computing and spintronics. Using the non-equilibrium Keldysh Green's function formalism, we demonstrate that such control can be established around rectangular cavities of two-dimensional TIs by breaking their time reversal symmetry via exchange magnetic fields and magnetic defects. In the presence of magnetic defects with xy symmetry or Ising symmetry, the density of states is localized, and the spin current forms a current loop around the rectangular cavity in TIs interfacing with two ferromagnetic stripes. We also observe that the spin direction of the traveling electrons is inverted under the reversal of bias and gate voltages. The change in the spin-polarized current around the cavities is predicted by varying the strength of Rashba spin-orbit coupling. This result allows for the creation and control of nearly fully spin-polarized currents with various spatial patterns around the cavities in TIs, and the design of tunable spin diodes for highly integrated spintronics.

A Graphene Geometric Diode with the Highest Asymmetry Ratio and Three States Gate‐Tunable Rectification Ability

AbstractGraphene geometric diodes, with applications in THz detection, energy harvesting, and high‐speed rectification, have been previously constrained by graphene quality and geometry feature size. This study presents significant advancements in graphene geometric diodes by employing the h‐BN/monolayer graphene/h‐BN heterojunction and extremely precise electron beam lithography. Two distinct designs of graphene geometric diodes with neck widths of 23 and 26 nm are fabricated, the superior of which demonstrated an asymmetry ratio of 1.97, a zero bias current responsivity of 0.6 A W−1, and a voltage responsivity of 12,000 V W−1, setting new benchmarks for such devices. Integrating this device into a rectification circuit, the experimentally validate that the rectified DC output voltage can be dynamically modulated and even inverted through adjustments to the diode's gate voltage. This behavior aligns seamlessly with graphene's intrinsic tunability of charge carriers, implying promising prospects for the device's application in advanced logic circuits, bidirectional switches, and signal modulation/demodulation techniques.