Asymmetric energy barrier induced magnetic skyrmion diodes in synthetic antiferromagnetic nanotracks

Abstract

Magnetic skyrmions are nanoscale spin textures with topological protection properties, which are regarded as promising information carriers. When skyrmions move along nanotracks, their trajectories will shift if affected by skyrmion Hall effect and pinning effect. In this work, the influence of trapezoidal notches in synthetic antiferromagnetic nanotracks on the dynamics of skyrmions is investigated through micromagnetic simulation. The results exhibit that the asymmetric energy barrier induced by the asymmetric geometric structure can hinder reverse motion of skyrmions to realize the unidirectional conduction function of the diodes. Adjusting the height and inclination angle of the trapezoidal notch can effectively expand the current operating windows of the diodes, and the larger the height or inclination angle, the higher the threshold current density to overcome the pinning effect of the geometric energy barrier. Furthermore, the failure mode has a crucial impact on the implementation of skyrmion diodes. By utilizing the asymmetric structure, the forward conduction and reverse cutoff of skyrmion-based diodes can be achieved within 4 ns, with lower energy consumption than traditional diodes, resulting in high efficiency and low energy consumption of diodes. This work proposes a method for realizing the diode functionality by simply altering the geometric structure of the nanotracks, which may play an important role in the design and application of skyrmion-based diodes.