Indium gallium zinc oxide (IGZO) is attracting increasing attention as a promising semiconducting material for use in next-generation semiconductors and display devices; for the application of IGZO to next-generation devices, it is necessary to have dry etch characteristics such as highly anisotropic etch profile, fast etch rate, and high mask selectivity. In the present study, IGZO was etched with various hydrofluorocarbon (HFC)-type gases (CxHyFz) in an inductively coupled plasma (ICP) etcher and, the etch characteristics and the possibility of removing the residue forming on the chamber wall by in-situ chamber cleaning was investigated. This study also investigated the use of low global warming potential (GWP) gas in IGZO etching, in response to the fact that HFC-type gases tend to show high GWP. The results showed that, when HFC-type gases were used in the etching of IGZO, the ratio of H/F in HFC affected the IGZO etch rate and etch selectivity. Among the HFC gases used in the experiment, such as CHxFy (x + y = 4) and C3HxFy (x + y = 8), IGZO was etched faster with the gas with higher H/F ratio, which was attributed to the easier removal of zinc in IGZO during the etching, along with the removal of In through the formation of more volatile In(CHx)y; this is attributed to the fact that, among IGZO components, zinc was the most difficult material to etch with the HFC gases. Among the HFC-type gases investigated, C3H6F2 (HFC-272ca), which is a low GWP (GWP100yr = 139) gas, showed the highest etch rate of ∼ 55 nm/min, the lowest dimensional loss (less than 7 nm for photoresist masked IGZO), and the most anisotropic etch profile with the lowest surface roughness. During the etching with HFC gases, compounds such as GaHx/Ga(CHx)y, COx, In(CHx)y, and Zn(CHxFy)z were expected to have been produced as byproducts, and these were removed through Ar+ ion sputtering from the IGZO surface, but some of the these compounds were accumulated on the chamber wall along with dissociated HFCs that were formed during the etching. However, it was possible to completely remove these etch byproducts that had been formed on the chamber wall by using a H2/Ar plasma.
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