Vertically-integrated metal-insulator-metal (MIM) capacitors on silicon are demonstrated for the first time utilizing an entirely additive RF-specific inkjet-printing process. The inkjet-printed MIM capacitors demonstrate a high capacitance per unit area of up to 33 pF/mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> by utilizing novel dielectric inks, while achieving quality factors (Q) up to 25 and self-resonant frequencies (SRFs) above 1 GHz. Measurements of dielectric permittivity, leakage current, voltage breakdown, and fabrication repeatability are presented confirming the high-performance operation of the printed MIM capacitors.