Dielectric Charging Research Articles

Quasi-Hydrogen Bond and Charge-Trapping Effect Originating from Polar Side Group Lead to Significantly Suppressed Charge Transport in Polypropylene.

How to fundamentally suppress charge transport is one of the essential issues in polymer dielectrics. This work reports significant charge transport suppression by glycidyl methacrylate (GMA) side group modification on polypropylene (PP). Experimental and computational investigations discover for the first time a quasi-hydrogen bond effect generated by carbonyl and epoxide of GMA in PP inter/intramolecular structure, while introducing trap energy levels within the HOMO-LUMO gap. These energy levels suppress the leakage current of GMA-modified PP thanks to the charge-trapping effect. The quasi-hydrogen bond originating from the interaction between the high-polar GMA group and flexible PP chain raises the thermostability while averaging the electron distribution between hydrogen and acceptor oxygen, which is conducive to lessening electric weak points, suppressing charge transport, and finally enhancing the electrical breakdown strength. This work provides new thinking on polymer dielectric design and charge transport regulation utilizing electron structure and weak interaction at the molecular scale.

Polymer Capacitor Films with Nanoscale Coatings for Dielectric Energy Storage: A Review

Enhancing the energy storage properties of dielectric polymer capacitor films through composite materials has gained widespread recognition. Among the various strategies for improving dielectric materials, nanoscale coatings that create structurally controlled multiphase polymeric films have shown great promise. This approach has garnered considerable attention in recent years due to its effectiveness. This review examines surface-coated polymer composites used for dielectric energy storage, discussing their dielectric properties, behaviors, and the underlying physical mechanisms involved in energy storage. The review thoroughly examines the fabrication methods for nanoscale coatings and the selection of coating materials. It also explores the latest advancements in the rational design and control of interfaces in organic–inorganic, organic–organic, and heterogeneous multiphase structures. Additionally, the review delves into the structure–property relationships between different interfacial phases and various interface structures, analyzing how nanoscale coatings the impact dielectric constant, breakdown strength, conduction and charge transport mechanisms, energy density and efficiency, thermal stability, and electrothermal durability of polymeric capacitor films. Moreover, the review summarizes relevant simulation methods and offers computational insights. The potential practical applications and characteristics of such nanoscale coating techniques are discussed, along with the existing challenges and practical limitations. Finally, the review concludes with a summary and outlook, highlighting potential research directions in this rapidly evolving field.

Droplet-based triboelectric devices using liquid dielectrics for self-powered sensing applications

Triboelectric nanogenerators (TENGs) have attracted great interests by exploiting the complex interplay between contact electrification and electrostatic induction. The versatility of tribo-dielectric materials offers significant advantages for environmentally adaptive device design. In this regard, liquid dielectrics provide intimate contact between filled materials and high dielectric strength. Herein, a liquid dielectric-based TENGs system featuring a charge-transfer liquid layer is presented. A multifaceted summary is presented to illustrate the relationship between liquid dielectric materials and charge transfer mechanisms. New strategies for exploiting the dielectric properties of various liquids to control their electrical properties and monitor the parameters of liquid dielectric properties are highlighted. Additionally, it contributes to the advancement of self-powered sensing technology with increased flexibility, capacitance tuning, and sensor functionality through easy modularization. These achievements contribute to the understanding of charge transfer mechanisms in liquids and highlight their potential for self-powered sensing applications.

Polymer Dielectric-Based Emerging Devices: Advancements in Memory, Field-Effect Transistor, and Nanogenerator Technologies.

Polymer dielectric materials have recently attracted attention for their versatile applications in emerging electronic devices such as memory, field-effect transistors (FETs), and triboelectric nanogenerators (TENGs). This review highlights the advances in polymer dielectric materials and their integration into these devices, emphasizing their unique electrical, mechanical, and thermal properties that enable high performance and flexibility. By exploring their roles in self-sustaining technologies (e.g., artificial intelligence (AI) and Internet of Everything (IoE)), this review emphasizes the importance of polymer dielectric materials in enabling low-power, flexible, and sustainable electronic devices. The discussion covers design strategies to improve the dielectric constant, charge trapping, and overall device stability. Specific challenges, such as optimizing electrical properties, ensuring process scalability, and enhancing environmental stability, are also addressed. In addition, the review explores the synergistic integration of memory devices, FETs, and TENGs, focusing on their potential in flexible and wearable electronics, self-powered systems, and sustainable technologies. This review provides a comprehensive overview of the current state and prospects of polymer dielectric-based devices in advanced electronic applications by examining recent research breakthroughs and identifying future opportunities.

Dramatic Influence of Temperature on Charging

Charging of cables outside of a spacecraft has been cited as the cause of multiple spacecraft anomalies based upon correlations with peaks in the energetic electron environment and because the electron flux exposure of external cables is much higher than internal cables. However, external cables are subject to much wider temperature changes than hardware located inside a thermally regulated spacecraft. Temperature affects bulk resistivity and radiation-induced conductivity, but temperature is often ignored in charging analyses and tests. In this paper, temperature effects are combined with a diurnal temperature variation and an external electron environment to simulate the charging of an external coax. The simulation shows that the coax dielectrics behave as perfect insulators during the cold portion of the 24 h cycle, but the accumulated charge leaks out during the hot portion of the cycle. There is no memory or hysteresis of charge density from one day to the next. This behavior is compared to the behavior of materials inside the spacecraft, where low flux and stable temperatures lead to charging time constants ranging from weeks to months that produce a slow, stair-step increase of trapped charge in response to multiple electron storms. These variations in charging response explain why some anomalies correlate best with peak 24 h average flux, whereas others correlate well with 14- or 21-day averaged flux. Analyses and tests used to qualify designs or investigate anomalies must account for the dramatic effects that temperature variation can have on the charging of insulators and isolated conductors.

Enhancing the Performance of Electrochemical RAM (ECRAM) through Modeling Guided Device Engineering

Traditionally, the only ions allowed or welcomed by the microelectronic industry are those that act as fixed dopants. The issue of mobile ions became welcome primarily due to the memristor technology however, thin film transistor technologies benefit from them too. The electrochemical (transistor) random access memory (ECRAM) is emerging as a promising building block for multi-level neuromorphic computing. Using FAB-compatible materials we construct the ECRAM using CuOx as the gate and ions source (Cu+). The morphology of the HfOx gate insulator layer is tuned to render it ion transporting such that it can act as a uniform electrolyte layer. Lastly, the channel material is WOx with tungsten metal as the source/drain contact.While there are several reports of ECRAM devices, the operation mechanisms are not fully known/understood thus withholding progress of this field. Using the Sentaurus device simulator by Synopsis, including the hydrogen diffusion module, we simulate the mixed ionic electronic operation of the device. We have recently reported that by fitting the simulation to the device performance, we could identify the potentiation mechanism (i.e., insulator charging) and the occurrence of copper plating that takes place under high Cu+ ion flux (as in fast charging of Li batteries).[1]In the first part of the talk, we will expand on the chemical-physics details of the ECRAM device mentioned above. Next, we will present a new device architecture where we remove the WOx layer and study the ionic-electronic conduction of a modified HfOx layer. By fine-tuning the stoichiometry of the HfOx layer, it assumes both roles of ionic electrolyte and electronic conducting channel. Following detailed modelling of the measured properties, we introduce AlO2 as an ionic barrier layer at the WOx/HfOx interface to enhance the ionic retention of the HfOx layer. Using the above three device architectures in conjunction with the mixed ionic-electronic device simulation we reveal the role of the two memory mechanisms: a) Electric field-activated ion transport and b) Structure-induced trapping by ion-barrier layers.Reference[1] Nir Tessler, Nayeon Kim, Heebum Kang, Jiyong Woo; Switching mechanisms of CMOS-compatible ECRAM transistors—Electrolyte charging and ion plating. J. Appl. Phys. 21 August 2023; 134 (7): 074501. https://doi.org/10.1063/5.0154153 Figure 1

Determination of Surface Charge Density and Charge Mapping of CYTOP Film in Air using Electrostatic Force Microscopy.

Cyclic transparent optical polymer (CYTOP), a fluoropolymer, finds a plethora of applications in microelectronic devices for sustainable energy harvesting and memory devices. By and large, these devices demand high voltage breakdown, a high dielectric constant, transparency, charge storage, and retention capabilities. Despite many efforts, comprehensive investigation of the charge distribution, retention, and discharge studies conducted on the CYTOP film at the micro-scale remains elusive. Here, we present direct quantification and mapping of surface charge on the CYTOP surface at room temperature using two different modes of advanced surface probe microscopy i.e., Kelvin probe force microscopy (KPFM) and electrostatic force microscopy (EFM). We estimated that the surface charge densities of the CYTOP film using EFM are 1.4 and 3.3 μC/cm2 for the injection of positive and negative charges, respectively. Furthermore, we determined the charge retention time for both injected positive and negative charges. We found that the retention capacity of the negative charges on the CYTOP film is much higher as compared to the positive charges. Moreover, it is also observed that injected negative charges are strongly localized on the CYTOP surface compared to the positive counterpart. Additionally, we demonstrated that charge writing is possible on the CYTOP surface using the AFM conductive tip. These results may find potential applications in energy harvesting, sensing, memory devices, security, and surveillance.

Noise and sensitivity analysis of the dielectric modulated reconfigurable SiNW-SBT for biosensor applications

For the first time, we reported the noise and sensitivity analysis of the Dielectric Modulated Reconfigurable Silicon Nanowire-based Schottky Barrier Transistor (DMR SiNW-SBT) for biosensor applications. To validate the simulation, we present experimental calibration of the DMR SiNW-SBT biosensor. The biomolecules having different dielectric constants and charge densities are immobilized in the cavity region under the control gate. These biomolecules modulate the Schottky junction width at the source channel interface and enhance the drain current of the biosensor. The simulation results indicate that the proposed device ION and VTH sensitivity improved by 54.65 % and 85.71 %, respectively, with the state-of-the-art biosensors. Noise analysis shows that the NFmin decreased by 190.32 % and offers a low source impedance of 70Ω, which minimizes signal loss and distortion. Additionally, we investigate the linearity parameters that outperformed the FET-based biosensors. The gm3 experiences a reduction of 123.21 %, while the VIP3 sees an increase of 7.87 % and the IIP3 shows a rise of 7.21 %. Furthermore, we have conducted device optimization by varying the cavity length and thickness. We also outline potential fabrication steps for the DMR SiNW-SBT biosensor. Thus, results show that the proposed biosensor emerges as a promising candidate for advanced biosensing applications with high sensitivity, enhanced linearity, and robust noise resilience.

Metal Strip Implanted Tunneling Field-Effect Transistor Biosensor as a Label-Free Biosensor.

In this study, we design and simulate a metal implanted dielectrically modulated tunneling field-effect transistor (MI-DMTFET). In the ambipolar conduction state, the proposed structure works as an efficient sensor for the detection of a wide range of biomolecules. A metal strip (MS) is implanted above the drain-channel junction in the gate dielectric to improve the alignment of band gaps. Therefore, with the help of implanted metal work function engineering, the tunneling barrier gets lowered, which in turn increases the ambipolar current. An optimum metal-strip implant work function of 4.85 eV and a length of 1.5 nm have resulted in significantly improved performance of the proposed device. It has been observed that when the biomolecules with varying dielectric constants and charge densities are captured in the nanogap cavity, the ambipolar current of the biosensor changes, resulting in the detection of the biomolecules. Quantitative and comprehensive analyses of device parameters such as surface potential, electric field, band-to-band tunneling, subthreshold slope, and ION/IOFF ratio analysis have been performed. Rigorous comparative analyses of key performance-measuring parameters have been performed with a conventional sensor device. It has been found that the proposed device offers maximum sensitivity of 1220 under an ambipolar state at k = 12.

Lithium ionic conductivity and structural studies of NASICON structured Li0.4Sr0.3Zr0.5Ti1.5(PO4)3

Stable solid electrolytes have been the subject of intense research due to the growing demand for energy storage and portable energy sources in rechargeable Li-ion batteries. Sodium (NA) super (S) ionic (I) conductor (CON) abbreviated as NASICON are suitable for use as solid electrolytes due to their excellent ionic conductivity and chemical stability. We have reported the effect of partial doping of Sr at Li and Zr4+ at Ti4+ position on the structure and ionic conductivity of composition Li0.4Sr0.3Ti2(PO4)3 (LSTP). The composition with formula Li0.4Sr0.3Ti2−xZrx(PO4)3 (x = 0.0, 0.5, 2.0) were prepared by solid state reaction method. The phase and crystal structure were examined using X-ray diffraction (XRD) patterns. The compositions were in rhombohedral phase with the space group R 3¯\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\overline{3}$$\\end{document} c. The doping of Zr4+ in LSTP causes the peaks in the XRD spectra for doped composition (x = 0.5, 2.0) to move towards lower angle. The displacement of the XRD peaks towards lower angle side show the expansion in the lattice of the Zr doped compositions Li0.4Sr0.3Ti1.5Zr0.5(PO4)3 and Li0.4Sr0.3Zr2(PO4)3. The presence of stretching and bending modes of PO4 groups in the prepared compositions was identified by FTIR spectra. The enhanced bulk conductivity of 4.32 × 10–5 S/cm for Zr doped composition Li0.4Sr0.3Ti1.5Zr0.5(PO4)3 and 3.20 × 10–5 S/cm for composition Li0.4Sr0.3Zr2(PO4)3 is observed at 25 °C. The modulus peaks in the Zr doped composition Li0.4Sr0.3Ti1.5Zr0.5(PO4)3 is displaced towards higher frequencies at 450 °C, indicating the presence of the thermally produced dielectric relaxation phenomenon and charge carrier hopping. The cole cole plot consisting of one semicircle in case of Li0.4Sr0.3Ti1.5Zr0.5(PO4)3 discusses the contribution of bulk and grain boundary resistances and is fitted by equivalent circuit consisting of CPE and R element joined in parallel.

Metal inserted doping less dielectrically modulated TFET biomarker for SARs-CoV-2 detection

In this paper, a metal strip loaded doping less TFET (MS-DLTFET) biomarker with four cavities is proposed for SARs-CoV-2 detection virus. The results demonstrate that the proposed device offers an improved biomarker performance by introducing the charged plasma concept and the metal strips. The electrical parameters such as electron tunneling rate, drain current (Ids), current ratio (ION/IOFF), threshold voltage (Vth) are evaluated through simulations by immobilized dielectric constant (k) and charge density (ρ) of the bioelements in the nano-gap cavities. In addition, their sensitivity is also calculated with respect to air. The results depict that the proposed device tenders better performance in terms of Ids, ION/IOFF and Vth sensitivity as compared to existing devices. The device's response time under varying k and ρ values are investigated. The non-uniform cavity configurations formed due to steric hindrance effect are studied. It is found that concave configuration offers the best performance compared to other. Furthermore, the cavity size analysis is also performed to optimize the device performance.

Topological disclination mode in photonic Chern insulators

Topological defects in topological materials offer novel routes for creating topological modes and probing bulk topology. Disclination, a class of topological defects, has been recently shown to host fractional charges in topological crystalline insulators with well-defined Wannier centers. Here, we study the effects of disclinations in gyromagnetic photonic crystals with non-zero Chern numbers that prohibit the Wannier center picture. We find the emergence of topological disclination modes carrying orbital angular momentum from the interplay between the Chern-type topology and the effective flux induced by the disclination. When the Chern number changes its sign, the chirality of the disclination mode also flips, revealing the bulk-disclination correspondence. Furthermore, we perform numerical experiments to probe the disclination mode. Our results expand the study of disclination physics in photonic crystals to time-reversal-broken systems.

Poly‐DADMAC Functionalized Polyethylene Oxide Composite Nanofibrous Mat as Highly Positive Material for Triboelectric Nanogenerators and Self‐Powered Pressure Sensors

AbstractThe triboelectric nanogenerator (TENG) is a promising technology for self‐powered sensors and vibration‐driven energy harvesting, with its development especially influenced by the characteristics of tribomaterials. However, developing tribopositive materials with a strong cationic effect and high electron‐donating capability remains challenging. In this study, a novel polyethylene oxide@poly(diallyldimethylammonium chloride) (PEO@Poly‐DADMAC) composite nanofiber mat (NFM) is successfully fabricated using the electrospinning technique. It functions as a highly tribopositive material, particularly enhancing the performance of nanofiber‐based TENGs (NF‐TENGs). Through investigation of its physical and triboelectric properties, the study revealed that incorporating cationic Poly‐DADMAC with PEO effectively boosts NF‐TENG output by increasing the dielectric constant (twofold), electron‐donating affinities, and surface charge trapping capability. The fabricated NF‐TENG shows excellent output performance generating 980 V, a maximum power density of 5.6 Wm−2, and an ultrahigh sensitivity of 8.923 V kPa−1 which endows composite reliability for power supply and sensing capability. More importantly, the PEO@Poly‐DADMAC‐based self‐powered motion sensor with an NF‐TENG array is successfully demonstrated in multifunctional applications such as athlete activity tracking, and wireless gaming interface control. This study not only offers new insights into optimizing performance and selecting alternative tribomaterials but also provides valuable guidance for developing high‐output TENGs and highly sensitive self‐powered sensors.

Dynamical separation of charge and energy transport in one-dimensional Mott insulators

Dynamical separation of charge and energy transport in one-dimensional Mott insulators

Advanced Dielectric Materials for Triboelectric Nanogenerators: Principles, Methods, and Applications.

Triboelectric nanogenerator (TENG) manifests distinct advantages such as multiple structural selectivity, diverse selection of materials, environmental adaptability, low cost, and remarkable conversion efficiency, which becomes a promising technology for micro-nano energy harvesting and self-powered sensing. Tribo-dielectric materials are the fundamental and core components for high-performance TENGs. In particular, the charge generation, dissipation, storage, migration of the dielectrics, and dynamic equilibrium behaviors determine the overall performance. Herein, a comprehensive summary is presented to elucidate the dielectric charge transport mechanism and tribo-dielectric material modification principle toward high-performance TENGs. The contact electrification and charge transport mechanism of dielectric materials is started first, followed by introducing the basic principle and dielectric materials of TENGs. Subsequently, modification mechanisms and strategies for high-performance tribo-dielectric materials are highlighted regarding physical/chemical, surface/bulk, dielectric coupling, and structure optimization. Furthermore, representative applications of dielectric materials based TENGs as power sources, self-powered sensors are demonstrated. The existing challenges and promising potential opportunities for advanced tribo-dielectric materials are outlined, guiding the design, fabrication, and applications of tribo-dielectric materials.

Thermodynamic driving forces in contact electrification between polymeric materials

Contact electrification, or contact charging, refers to the process of static charge accumulation after rubbing, or even simple touching, of two materials. Despite its relevance in static electricity, various natural phenomena, and numerous technologies, contact charging remains poorly understood. For insulating materials, even the species of charge carrier may be unknown, and the direction of charge-transfer lacks firm molecular-level explanation. Here, we use all-atom molecular dynamics simulations to investigate whether thermodynamics can explain contact charging between insulating polymers. Based on prior work suggesting that water-ions, such as hydronium and hydroxide ions, are potential charge carriers, we predict preferred directions of charge-transfer between polymer surfaces according to the free energy of water-ions within water droplets on such surfaces. Broad agreement between our predictions and experimental triboelectric series indicate that thermodynamically driven ion-transfer likely influences contact charging of polymers. Furthermore, simulation analyses reveal how specific interactions of water and water-ions proximate to the polymer-water interface explain observed trends. This study establishes relevance of thermodynamic driving forces in contact charging of insulators with new evidence informed by molecular-level interactions. These insights have direct implications for future mechanistic studies and applications of contact charging involving polymeric materials.

Incident beam current impact on space-charge retention in electron dynamitron irradiated polymethyl methacrylate

Dielectric charging aboard spacecraft and satellites is a persistent and pressing issue in materials design and applications. This study investigated the effect of electron irradiation on charge trapping and leakage properties in polymethyl methacrylate, which is necessary for determining the maximum permissible fluence of radiation before the material is pushed beyond its breakdown threshold in charged particle radiation-intense environments. It was observed that dielectric breakdown in the form of an electrostatic discharge event cannot be induced under the conditions of this experiment after an amount of time that is dependent on initial electron fluence. This time limit for which an electrostatic discharge can be induced was found to be longer for the lower beam current irradiations. The work presented here discusses the factors affecting charge leakage using a global electric field-driven model.

Study of dielectric polarization and electrical transport in Bi1·2Sb0·8Te0·4Se2.6 nanofilms

Studying the dielectric response of topological insulators (TIs) can unveil their unique physical mechanisms such as charge transport and spin-orbit coupling effects. However, due to the manifestation of material's topological nature and band structure primarily in nanofilm, such thickness poses challenges for dielectric testing. To date, research on TI dielectric aspects remains relatively unexplored. Therefore, this paper successfully synthesizes nanofilm of quaternary topological insulator Bi1·2Sb0·8Te0·4Se2.6 (BSTS) using laser molecular beam epitaxy (LMBE) technique. Utilizing a wide-frequency dielectric spectrometer and a comprehensive physical properties measurement system (PPMS), we measured and thoroughly analyzed the dielectric polarization and charge transport characteristics of BSTS. We observed various polarization responses in the frequency range of 101–103 Hz, with the dipole orientation gradually failing to keep pace with the frequency increase in the range of 103–105 Hz, and the relaxation polarization unable to establish itself in the range of 105–107 Hz, with polarization primarily contributed by displacement polarization. Subsequently, we further analyzed the dependence of BSTS dielectric polarization response on temperature and film thickness, which will help reveal the influence of external factors on TI dielectric response, providing crucial insights for controlling TI materials' dielectric response. This not only deepens our understanding of the fundamental physical properties of this novel material but also offers important scientific basis and technological support for its applications in quantum computing, photonics, spintronics, and other fields.

High-Performance All-Textile Triboelectric Nanogenerator toward Intelligent Sports Sensing and Biomechanical Energy Harvesting.

Merging textiles with advanced energy harvesting technology via triboelectric effects brings novel insights into self-powered wearable textile electronics. However, fabrication of a comfortable textile-based triboelectric nanogenerator (TENG) with high outputs remains challenging. Herein, we propose a highly flexible, tailorable, single-electrode all-textile TENG (t-TENG) with both wear comfort and high outputs. A dielectric modulated porous composite coating containing poly(vinylidene fluoride)-hexafluoropropylene copolymer and barium titanate nanoparticles is constructed on conductive fabric to counterpart with highly positive glass fiber fabric through knotted yarn bonding, maintaining the superiority of textiles and strong triboelectricity. Through the synergistic optimization of charge storage via dielectric modulation and charge dissipation offset by electrical poling, remarkable outputs (261 V, 1.5 μA, and 12.7 nC) are obtained from a miniaturized, lightweight t-TENG (2 × 2 cm2, 130 mg) with an instantaneous power density of 654.48 mW·m-2, as well as excellent electrical robustness and device durability over 20,000 cycles. The t-TENG also exhibits a high sensitivity of 3.438 V·kPa-1 in the force region (1-10 N), demonstrating great potential in TENG-based intelligent sports sensing applications for monitoring and correcting the basketball shooting hand and foot arch posture. Furthermore, over 110 light-emitting diode arrays can be lightened up by gently tapping this miniaturized t-TENG. It also offers a wearable power source scheme through integrating the single-electrode device into clothing and utilizing the skin as the grounded electrode, revealing its ease of integration and biomechanical energy harvesting capability. This work provides an attractive paradigm for next-generation textile electronics with well-balanced device performance and wear comfort.

Quantifying Dielectric Material Charge Trapping and De-Trapping Ability Via Ultra-Fast Charge Self-Injection Technique.

Recently, utilizing the air breakdown effect in the charge excitation strategy proves as an efficient charge injection technique to increase the surface charge density of dielectric polymers for triboelectric nanogenerators (TENGs). However, quantitative characterization of the ability of dielectric polymers to trap reverse charges and the effect on the startup time of secondary self-charge excitation (SSCE) are essential for extensive applications. Here, an ultra-fast charge self-injection technique based on a self-charge excitation strategy is proposed, and a standard method to quantify the charge trapping and de-trapping abilities of 23 traditional tribo-materials is introduced. Further, the relationship among the distribution of dielectric intrinsic deep, shallow trap states, and transportation of trapped charges is systematically analyzed in this article. It shows that the de-trapping rate of charges directly determines the reactivation and failure of SSCE. Last, independent of TENG contact efficiency, an ultra-high charge density of 2.67 mC m-2 and an ultra-fast startup time of SSCE are obtained using a 15µm poly(vinylidene fluoride-trifluoroethylene) film, breaking the historical record for material modification. As a standard for material selection, this work quantifies the charge trapping and de-trapping ability of the triboelectric dielectric series and provides insights for understanding the charge transport in dielectrics.