Noise and sensitivity analysis of the dielectric modulated reconfigurable SiNW-SBT for biosensor applications

Abstract

For the first time, we reported the noise and sensitivity analysis of the Dielectric Modulated Reconfigurable Silicon Nanowire-based Schottky Barrier Transistor (DMR SiNW-SBT) for biosensor applications. To validate the simulation, we present experimental calibration of the DMR SiNW-SBT biosensor. The biomolecules having different dielectric constants and charge densities are immobilized in the cavity region under the control gate. These biomolecules modulate the Schottky junction width at the source channel interface and enhance the drain current of the biosensor. The simulation results indicate that the proposed device ION and VTH sensitivity improved by 54.65 % and 85.71 %, respectively, with the state-of-the-art biosensors. Noise analysis shows that the NFmin decreased by 190.32 % and offers a low source impedance of 70Ω, which minimizes signal loss and distortion. Additionally, we investigate the linearity parameters that outperformed the FET-based biosensors. The gm3 experiences a reduction of 123.21 %, while the VIP3 sees an increase of 7.87 % and the IIP3 shows a rise of 7.21 %. Furthermore, we have conducted device optimization by varying the cavity length and thickness. We also outline potential fabrication steps for the DMR SiNW-SBT biosensor. Thus, results show that the proposed biosensor emerges as a promising candidate for advanced biosensing applications with high sensitivity, enhanced linearity, and robust noise resilience.