Dielectric Breakdown Tests Research Articles

Overestimate of thin dielectric lifetime in single doping type poly-gate capacitors

It is reported that effects of band-bending produce a voltage drop in the poly gate, which reduces the voltage stress across the capacitor dielectric. It was found that if this effect is not taken into account there is a three-orders-of-magnitude overestimate of the 5-V lifetime for a 68-AA oxide equivalent ONO poly/poly capacitor. A family of curves relating poly doping concentration, dielectric thickness, and the maximum allowable accelerated test voltage was given as guidelines for accelerated time-dependent dielectric breakdown testing.

Time-dependent dielectric breakbown evaluation for rapid-thermally grown SiO 2 films formed on submicron-grooved Si surfaces

MOS capacitors formed on submicron-grooved (100)Si surfaces have been studied by time-dependent dielectric breakdown tests and transmission electron microscopy. Their time to breakdown depends on the number and profile of groove corners. Rounding off the convex upper corners of Si grooves by rapid thermal processing and rounding off the concave bottom corners by reactive ion etching successfully suppress electric field localization at groove corners and improve the reliability of MOS capacitors formed on grooves.

Ｆｌｕｉｄ Ｍａｐｐｅｒによる針―平板電極系の空間電荷電界の可視化

A fluid flow mapper is used as equipment to make potential flow visibly. The authors have been visualized the lines of electric force in two dimensional electrostatic fields by means of the fluid flow mapper. Space charge distributions in electric fields having an axisymmetric property are simulated by a fixed sand-bed which behaves as distributed sources or sinks in the fluid flow mapper. In this paper, the fluid flow mapper is applied ito visualize and analyze axisymmetric three dimensional fields with space charges formed n a needle-plane electrode system used in dielectric breakdown tests. Furthermore, this paper describes the method analyzing space charge densities from the experimental results of flow patterns.

Dielectric breakdown and partial disc0harge in batio3ceramics

Abstract Barium titanate ceramics were subjected to dielectric breakdown and partial discharge tests under 60 Hz voltage as a function of sintering temperature (1300°C to 1450°C). The high temperature sintering resulted in large pore size. The large pores in over fired BaTiO3 ceramics, having relatively low inception voltage of partial discharge, contributed to the low breakdown field.

Partial discharge, microcracking, and breakdown in BaTiO3ceramics

Abstract Pure barium titanate ceramics was subjected to partial discharge and dielectric breakdown test. Local field enhancement at the pores lowered the partial discharge inception field and breakdown strength. After applying 50% of the breakdown voltage, microcracks were formed by the shear stress set up at blocked ferroelectric twin bands. When the discharge current at the pores under high voltage exceeds a critical value, it results in immediate thermal destroy of BaTiO3 ceramics. Morphology of the breakdown channel in barium titanate ceramics was observed.

Test Methods of Rotating Machines

Experimental results and development of testing apparatus and methods are described in three Sections without items overlapped with other papers in this issue. The first Section contains non-destructive test methods which include an automatic measurement of tan6, an automatic insulation analyzer (AIA) and a portable tester using trapezoidal voltage application. The second Section contains experimental results using very low frequency voltage as a high-potential proof test. The last Section contains experimental results of a potential grading method at electrode edges which is effective for dielectric breakdown tests of HV coil insulation performed in air.

A new AC dielectric breakdown test method of stator coils for high‐voltage rot at ing machinery

Electrical Engineering in JapanVolume 104, Issue 6 p. 1-9 Article A new AC dielectric breakdown test method of stator coils for high-voltage rot at ing machinery Tsutomu Tani, Tsutomu Tani Mitsubishi Electric CorporationSearch for more papers by this authorShohachiro Itoh, Shohachiro Itoh Mitsubishi Electric CorporationSearch for more papers by this authorShoji Hirabayashi, Shoji Hirabayashi Mitsubishi Electric CorporationSearch for more papers by this author Tsutomu Tani, Tsutomu Tani Mitsubishi Electric CorporationSearch for more papers by this authorShohachiro Itoh, Shohachiro Itoh Mitsubishi Electric CorporationSearch for more papers by this authorShoji Hirabayashi, Shoji Hirabayashi Mitsubishi Electric CorporationSearch for more papers by this author First published: November/December 1984 https://doi.org/10.1002/eej.4391040602Citations: 1AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinkedInRedditWechat Citing Literature Volume104, Issue6November/December 1984Pages 1-9 RelatedInformation

Impulse Breakdown in PMMA under Miegavolt, Nanosecond Excitation

Single impulse dielectric breakdown tests were performed on thick (0.16 to 1.91 cm) polymethylmethacrylate (PMMA) specimens using a uniform field geometry with 7.5 cm diameter Bruce contour electrodes. The applied voltage rose within 20 ns to 2 MV, remained there about 30 ns and decayed in about 65 ns. In some cases, specimens were deliberately altered by surface scribing, pin pricking, drilling small dimples, drilling holes in portions of laminated specimens, and combinations of these. Light emission during the breakdown pulse and damage morphology were studied. Results of these experiments include the following: Each specimen contained many partial channels as well as a main breakdown path. The number varied greatly with overvoltage. Specimens 0.16 cm thick (peak field 12 MV/cm) contained about 2000 partial tree-like channels in various stages of growth, while 1.91 cm thick specimens (peak field 1.1 MV/cm) contained about 20 partial channels. In all unaltered specimens, the channels originated at the anode surface. However, when deep cavities were intentionally introduced into the cathode surface, channels originated at these artificially produced defects as well as on the defect-free anode surface. Intense light emission occurred from both the partial channels and the main discharge channel. The main discharge path is formed only after one of the partial discharge channels has grown completely across the specimen.

Device Failure Analysis and Corrective Action Feedback to Process Control

The failure mechanism defined as an oxide integrity defect in an integrated circuit is covered. A step-by-step analysis is discussed from pinholes in the oxide until the real failure mechanism is revealed. All interim process control changes which further delineated the real problem are discussed. These include double-masking, double KMER process, additional cleanliness requirements, etc. The final recognition of the oxide integrity defect failure mechanism is discussed in detail. The joint plans-of-action between Autonetics and the various suppliers are outlined. The test plans originated are discussed, and the results are indicated in general terms and the courses of action taken by the suppliers. Included are test techniques by the suppliers to further outline the corrective action regarding the fabrication process and, where possible, the actual final agreed-to position taken. Included are the courses taken by the supplier regarding measurement techniques to be implemented to prevent further processing of defective materials as well as ultimate delivery to Autonetics. A detailed analysis is made of the failure analysis technique used by Autonetics to uncover the actual oxide integrity defect. Discussion of the effects of electrical overstress to the device is described, and the feasibility of dielectric breakdown testing is outlined. A study is made of the correlation of the failure analysis done by the suppliers and by Autonetics. A study is also reported regarding circuit application and analysis results made by Autonetics to further define the actual failure mechanism.